Prof. Yayi Wei Profile

Prof. Yayi Wei

Professor at Univ of Chinese Academy of Sciences

SPIE Involvement:

Conference Program Committee | Conference Chair | Editorial Board Member: Journal of Micro/Nanopatterning, Materials, and Metrology | Author

Publications (113)

Proceedings Article | 10 December 2024 Paper

A fast method for aerial image blur evaluation

Ziqi Li, Lisong Dong, Xiaojing Su, Wei Zhao, Yayi Wei, Lijie Zhang

Proceedings Volume 13423, 1342305 (2024) https://doi.org/10.1117/12.3052323

KEYWORDS: Artificial intelligence, Source mask optimization, Lithography, Projection systems, Convolution, Semiconducting wafers, Image analysis, Evolutionary algorithms, Computational lithography, Semiconductors

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Proceedings Article | 20 November 2024 Poster + Paper

Quantitative analysis of field intensity distribution effects on patterning results in laser direct writing lithography

Wei Zhao, Dandan Han, Yayi Wei

Proceedings Volume 13216, 1321626 (2024) https://doi.org/10.1117/12.3034616

KEYWORDS: Lithography, Imaging systems, Homogenization, Microlens array, Microlens, Beam shaping, Optical lithography, Laser applications

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Proceedings Article | 12 November 2024 Poster + Paper

Prediction of 3D morphological features of nano-patterns from SEM images using a frequency domain approach

Ge Liu, Libin Zhang, Le Ma, Yayi Wei, Yajuan Su

Proceedings Volume 13215, 1321511 (2024) https://doi.org/10.1117/12.3034496

KEYWORDS: Machine learning, 3D image reconstruction, Scanning electron microscopy, 3D modeling, Data modeling, Photoresist materials, Performance modeling, Simulations, Monte Carlo methods

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Proceedings Article | 12 November 2024 Poster + Paper

A semi-empirical approach for predicting LER statistical distribution in advanced nodes

Xin Hong, Xiaojing Su, Zixi Liu, Xiaohuan Ling, Yuqin Wang, Pengyu Ren, Yujie Jiang, Yajuan Su, Yayi Wei

Proceedings Volume 13215, 1321519 (2024) https://doi.org/10.1117/12.3034583

KEYWORDS: Line edge roughness, Stochastic processes, Extreme ultraviolet lithography

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Proceedings Article | 12 November 2024 Poster + Paper

The impact of aberrations in extreme ultraviolet lithography systems on exposure results

Jiashuo Wang, Ziqi Li, Xiaojing Su, Yayi Wei

Proceedings Volume 13215, 132150Z (2024) https://doi.org/10.1117/12.3034457

KEYWORDS: Monochromatic aberrations, Extreme ultraviolet lithography, Zernike polynomials, Lithography, Picosecond phenomena, Pupil aberrations, Source mask optimization, Wavefront aberrations, Wavefronts, Spherical lenses

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Proceedings Article | 10 April 2024 Poster + Paper

Identification of key aberrations that affect pattern imaging in EUVL

Jiashuo Wang, Xiaojing Su, Yayi Wei

Proceedings Volume 12954, 129541A (2024) https://doi.org/10.1117/12.3009886

KEYWORDS: Modeling, Critical dimension metrology, Matrices, Extreme ultraviolet lithography, Process modeling, Mathematical optimization, Light sources and illumination, Wavefront aberrations

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Proceedings Article | 10 April 2024 Poster + Paper

The influence of asymmetric spectrum of DUV light on imaging performance in advanced technology nodes

Yihua Zhu, Lisong Dong, Yayi Wei

Proceedings Volume 12953, 1295312 (2024) https://doi.org/10.1117/12.3010118

KEYWORDS: Critical dimension metrology, Simulations, Neural networks, Lithography, Light sources, Deep ultraviolet, Systems modeling, Excimer lasers

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Proceedings Article | 10 April 2024 Poster + Paper

Source optimization based on compression sensing for plasmonic lithography

Jianfang He, Ziqi Li, Huwen Ding, Lisong Dong, Yayi Wei

Proceedings Volume 12953, 1295316 (2024) https://doi.org/10.1117/12.3010575

KEYWORDS: Lithography, Plasmonics, Mathematical optimization, Photoresist materials, Matrices, Compressed sensing, Imaging systems, Reconstruction algorithms, Evanescence, Image resolution

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Proceedings Article | 10 April 2024 Paper

Prediction of etch bias using random forest model

Wenrui Wang, Hua Shao, Rui Chen, Yayi Wei

Proceedings Volume 12954, 129541F (2024) https://doi.org/10.1117/12.3010574

KEYWORDS: Etching, Data modeling, Random forests, Education and training, Machine learning, Calibration, Lithography, Decision trees, Scanning electron microscopy, Optical proximity correction

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Proceedings Article | 10 April 2024 Poster + Paper

A new stochastic EUV resist model based on a modified minimal process algorithm

Jing Xue, Guangjian He, Taian Fan, Yun Wang, Tianchun Ye, Yayi Wei

Proceedings Volume 12953, 1295314 (2024) https://doi.org/10.1117/12.3010234

KEYWORDS: Stochastic processes, Systems modeling, Diffusion, Monte Carlo methods, Photoresist materials, Computer simulations, Molecules, Extreme ultraviolet, Photoresist processing, Particles

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Proceedings Article | 10 April 2024 Poster + Paper

Inverse analysis of multilayer defects in EUV mask from the perspective of imaging performance

Chen Li, Lisong Dong, Yayi Wei

Proceedings Volume 12953, 1295315 (2024) https://doi.org/10.1117/12.3010429

KEYWORDS: Lithography, Mathematical modeling, Data modeling, Multilayers, Extreme ultraviolet, Reflection, Extreme ultraviolet lithography, Deformation, Modeling

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Proceedings Article | 10 April 2024 Poster + Paper

Using machine learning method to improve design sampling efficiency for fab applications

Zhengguo Tian, Yayi Wei, Yajuan Su, Libin Zhang, Lisong Dong, Le Ma

Proceedings Volume 12954, 129541H (2024) https://doi.org/10.1117/12.3009964

KEYWORDS: Machine learning, Data modeling, Optical proximity correction, Design, Semiconducting wafers, Environmental monitoring, Engineering, Scanning electron microscopy, Sampling rates, Feature extraction

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Proceedings Article | 9 April 2024 Poster + Paper

Modeling of silicon nitride chemical vapor deposition in high aspect ratio nano-scale substrate features

Hua Shao, Sen Deng, Chaoran Yang, Junjie Li, Rui Chen, Yayi Wei

Proceedings Volume 12958, 129580R (2024) https://doi.org/10.1117/12.3010859

KEYWORDS: Simulations, Silicon nitride, Diffusion, Chemical vapor deposition, Low pressure chemical vapor deposition, Ions, Scanning electron microscopy, Modeling, Calibration, 3D modeling

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Proceedings Article | 9 April 2024 Poster + Paper

Investigation of the influence of hardmask morphology on bowing effect in nano-scale silicon plasma etching process

Ziyi Hu, Junjie Li, Hua Shao, Rui Chen, Yayi Wei

Proceedings Volume 12958, 129580O (2024) https://doi.org/10.1117/12.3009955

KEYWORDS: Particles, Reflection, Monte Carlo methods, Etching, Silicon, Plasma etching, Chlorine, Ions, Plasma, Modeling

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Proceedings Article | 9 April 2024 Poster + Paper

Study of precisely controlled selective isotropic quasi-ALE of SiGe

Panpan Lai, Junjie Li, Hua Shao, Rui Chen, Yayi Wei

Proceedings Volume 12958, 129580P (2024) https://doi.org/10.1117/12.3010886

KEYWORDS: Etching, Atomic layer etching, Monte Carlo methods, Plasma, Germanium, Particles, Isotropic etching, Plasma etching, Nanosheets

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Proceedings Article | 9 April 2024 Poster + Paper

A novel kinetic framework-based multiscale modeling of spatial atomic layer deposition process

Sen Deng, Hua Shao, Dandan Han, Rui Chen, Yayi Wei

Proceedings Volume 12958, 129580Q (2024) https://doi.org/10.1117/12.3010331

KEYWORDS: Atomic layer deposition, Molecules, Silicon, Deposition processes, Process modeling, Modeling, Vacuum chambers, Silicon films, Silicon nitride

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Proceedings Article | 9 April 2024 Presentation + Paper

Study of selective dry etching Si0.7Ge0.3 with different plasma source in process of gate-all-around FET

Enxu Liu, Chaoran Yang, Junjie Li, Na Zhou, Longrui Xia, Rui Chen, Hua Shao, Jianfeng Gao, Zhenzhen Kong, Chenchen Zhang, Panpan Lai, Tao Yang, Yayi Wei, Junfeng Li, Jun Luo, Wenwu Wang

Proceedings Volume 12958, 129580F (2024) https://doi.org/10.1117/12.3010332

KEYWORDS: Etching, Plasma, Silicon, Dry etching, Field effect transistors, Gallium arsenide, Transistors, Particles, Resistance, Reflection

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SPIE Journal Paper | 26 October 2023

Selection approach of critical patterns for calibrating the physical resist model based on spectrum coverage

Jiashuo Wang, Lisong Dong, Xiaojing Su, Yajuan Su, Xu Ma, Yayi Wei

JM3, Vol. 22, Issue 04, 043201, (October 2023) https://doi.org/10.1117/12.10.1117/1.JMM.22.4.043201

KEYWORDS: Calibration, Matrices, Amplifiers, Photoresist processing, Light sources and illumination, Diffraction, Semiconducting wafers, Lithography, Quenching, Process modeling

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BackgroundThe resist model is a significant element of computational lithography. Accurate calibration of the resist model is essential to obtain predictive results that closely match the exposure results on wafers. The trade-off between model accuracy and runtime is a challenging task. The selection of critical patterns used in model calibration affects these two metrics directly.AimHaving a dependable method for choosing critical patterns during resist model calibration is essential for lithography engineers with diverse professional backgrounds. Equally important is the ability to decrease runtime while maintaining the precision of calibrated resist models. To address these concerns, we present an approach for selecting critical patterns utilized in resist model calibration.ApproachSince the spectrum carries pattern information, critical patterns are selected based on the coverage of the spectrum in the frequency domain. The spectrum coverage (SCO) of each pattern in the entire test pattern set is calculated according to the frequency and amplitude of all the spectra. Combinations of critical patterns are selected based on their SCO values. The optimal combinations include the most types of spectra and aim to adapt the calibrated model for broad applicability, encompassing both universal and unique patterns.ResultsThe model verification results are compared with the experience-based methods, which select critical patterns based on the pitch-to-CD ratio. The accuracy and effectiveness of the proposed methodology have been demonstrated through experimental results. Compared with experience-based methods that only have dense and isolated critical patterns, our proposed method has a 9.8% increase in accuracy and a 35% decrease in runtime. Even compared with experience-based methods that include forbidden pitches, our method still achieves a 6.4% increase in accuracy without increasing runtime.ConclusionsIn summary, the suggested approach for selecting critical patterns based on SCO surpasses the experience-based methods in terms of both accuracy and efficiency. It can significantly shorten the modeling cycle of resists.

SPIE Journal Paper | 15 May 2023

Optimization of chemically amplified resist formulation based on simple random sampling and kernel density estimation

Pengjie Kong, Lisong Dong, Xu Ma, Yayi Wei

JM3, Vol. 22, Issue 02, 024601, (May 2023) https://doi.org/10.1117/12.10.1117/1.JMM.22.2.024601

KEYWORDS: Photoresist materials, Chemically amplified resists, Sampling rates, Photoresist developing, Chemical analysis, Quenching, Absorption, Statistical analysis, Refractive index, Matrices

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Proceedings Article | 1 May 2023 Poster + Paper

Study of selective isotropic etching effects of Si1-xGex in gate-all-around nanosheet transistor process

Qi Yan, Hua Shao, Junjie Li, Zhenzhen Kong, Xiaobin He, Junfeng Li, Tao Yang, Rui Chen, Yayi Wei

Proceedings Volume 12499, 124990K (2023) https://doi.org/10.1117/12.2658312

KEYWORDS: Etching, Silicon, Monte Carlo methods, Germanium, Isotropic etching, Nanosheets, Transistors, Gallium arsenide, Anisotropic etching, Particles

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Proceedings Article | 1 May 2023 Poster + Paper

Modeling of SiNx growth by chemical vapor deposition in nanosheet indentation

Hua Shao, Panpan Lai, Junjie Li, Guobin Bai, Qi Yan, Junfeng Li, Tao Yang, Rui Chen, Yayi Wei

Proceedings Volume 12499, 124990L (2023) https://doi.org/10.1117/12.2658152

KEYWORDS: Plasma enhanced chemical vapor deposition, Low pressure chemical vapor deposition, Silicon nitride, Chemical vapor deposition, Nanosheets, Monte Carlo methods, Particles, Modeling, Transistors, Solids

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Gate-all-around nanosheet (GAA-NS) transistors are commonly considered to be most competitive logic device in the future. In the GAA nanosheet transistor device fabrication process, the inner spacer formation is a critical step as it physically isolates the gate from the source/drain, and defines the gate length. After the selective lateral etch of the SiGe in alternative Si/SiGe stack, inner spacer material is deposited and SiN_x is commonly used. This gap filling process demands for highly uniform growth of materials in order to minimize transistor variability. As moving to three-dimensional stacked structure, lateral open features bring challenges to conventional deposition manners such as chemical vapor deposition (CVD). In our previous work, we have compared the filling performance between low-pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD), and demonstrated good SiN_x growth conformity by LPCVD in Si/SiGe indentation cavities. The cavity geometry was also found to pose significant impact on growth profile. However these works were carried out on isolated Si/SiGe nanosheet structure without neighboring unit. CVD process performance may degrade when moving from isolated to dense structures, especially when the critical dimension goes into tens of nanometers. In this paper, we present our latest simulation progress on the profile evolution of SiN_x CVD in dense Si/SiGe nanosheet structures with varying geometry and density of units. The SiN_x profile simulation indicates that LPCVD still maintains promising coverage performance in cavities, the SiN_x film thickness in the inner and outer side of unit are pretty close, while necking signature emerges near the unit top as process time increases. In contrast, PECVD exhibits pin holes within the cavity at the beginning of process, and the necking effect is relatively severe both in the cavity and near top of unit. We conduct systematic study on periodic stack structure array with different SiGe indentations. Pin holes are observed and get more pronounced in the PECVD process when the space between units is narrowed down. As the indentation decreases, pin holes become much smaller and exhibit better filling performance inside the lateral cavity.

Proceedings Article | 1 May 2023 Poster + Paper

Predicting the critical features of the chemically-amplified resist profile based on machine learning

Pengjie Kong, Lisong Dong, Xu Ma, Yayi Wei

Proceedings Volume 12498, 124981U (2023) https://doi.org/10.1117/12.2658664

KEYWORDS: Photoresist materials, Neural networks, Machine learning, Artificial neural networks, Cadmium sulfide, Photoresist developing, Chemically amplified resists, Education and training, Computer simulations, Optical proximity correction

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Proceedings Article | 1 May 2023 Poster + Paper

Application of double exposure technique in plasmonic lithography

Huwen Ding, Lihong Liu, Lisong Dong, Zhishu Chen, Yayi Wei

Proceedings Volume 12497, 124970S (2023) https://doi.org/10.1117/12.2657812

KEYWORDS: Lithography, Surface plasmons, Photomasks, Light sources and illumination, Polarized light, Double patterning technology, Metals, Interfaces

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Proceedings Article | 28 April 2023 Poster + Paper

Lithography hotspot detection based on residual network

Mu Lin, Fanwenqing Zeng, Yijiang Shen, Yayi Wei

Proceedings Volume 12495, 124951M (2023) https://doi.org/10.1117/12.2657644

KEYWORDS: Education and training, Data modeling, Lithography, Performance modeling, Machine learning, Feature extraction, Statistical modeling, Overfitting, Deep learning, Very large scale integration

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Proceedings Article | 28 April 2023 Poster + Paper

A geometric model for active contours in inverse lithography

Yijiang Shen, Yayi Wei

Proceedings Volume 12495, 124951W (2023) https://doi.org/10.1117/12.2657611

KEYWORDS: Source mask optimization, Contour modeling, Lithography, Semiconducting wafers, Optical proximity correction, Adaptive optics, Projection systems, Computer simulations, Matrices, Image processing

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Proceedings Article | 28 April 2023 Poster + Paper

Hybrid deep learning OPC framework with generative adversarial network

Qingchen Cao, Peng Xu, Juan Wei, Ruihua Liu, Fu Li, Jingjing Fan, Chunlong Yu, Zhifeng Li, Jiangliu Shi, Yayi Wei

Proceedings Volume 12495, 124951R (2023) https://doi.org/10.1117/12.2658271

KEYWORDS: Optical proximity correction, Photomasks, Design and modelling, Lithography, Deep learning, Adversarial training, Machine learning

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Proceedings Article | 28 April 2023 Paper

Probability model of bridging defects for random logic via in 3nm double patterning technology at 0.33 NA

Xiaojing Su, Jingjing Li, Taian Fan, Jiashuo Wang, Lisong Dong, Yajuan Su, Yayi Wei

Proceedings Volume 12495, 124950C (2023) https://doi.org/10.1117/12.2658126

KEYWORDS: Double patterning technology, Optical lithography, Extreme ultraviolet, Logic, Critical dimension metrology, Source mask optimization, Overlay metrology, Design and modelling

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Proceedings Article | 28 April 2023 Paper

Optical proximity correction with the conditional Wasserstein GAN

Pengpeng Yuan, Peng Xu, Yayi Wei

Proceedings Volume 12495, 124951F (2023) https://doi.org/10.1117/12.2657584

KEYWORDS: Optical proximity correction, Neural networks, Machine learning, Adversarial training, Batch normalization, Statistical analysis, Semiconductors, Microelectronics

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Proceedings Article | 27 April 2023 Poster + Paper

An optical critical dimension (OCD) model analysis on 3nm complementary FET (CFET) gate stacks

Qi Wang, Yayi Wei, Qiang Wu, Yanli Li, Xianhe Liu

Proceedings Volume 12496, 124962Q (2023) https://doi.org/10.1117/12.2657944

KEYWORDS: Scatterometry, Spectroscopy, Optics manufacturing, Modeling, Metrology

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Proceedings Article | 27 April 2023 Poster + Paper

A study of diffraction-based overlay (DBO) on a 3nm CFET metal layer

Yanli Li, Yayi Wei, Qiang Wu, Xianhe Liu, Qi Wang

Proceedings Volume 12496, 124962Y (2023) https://doi.org/10.1117/12.2658167

KEYWORDS: Diffraction, Metals, Tin, Film thickness, Chemical mechanical planarization, Back end of line, Simulations, Spin on carbon materials, Overlay metrology, Signal intensity

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SPIE Journal Paper | 19 January 2023

Curvilinear mask optimization with refined generative adversarial nets

Qingchen Cao, Peng Xu, Song Sun, Jianfang He, Juan Wei, Jiangliu Shi, Yayi Wei

JM3, Vol. 22, Issue 01, 013201, (January 2023) https://doi.org/10.1117/12.10.1117/1.JMM.22.1.013201

KEYWORDS: Gallium nitride, Optical proximity correction, Design and modelling, Lithography, Education and training, Source mask optimization, Model-based design, Computer simulations, Contour modeling, Adversarial training

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SPIE Journal Paper | 20 December 2022

Mitigating the forbidden pitch of extreme ultraviolet lithography using mask optimization based on genetic algorithm

Ling Ma, Lisong Dong, Taian Fan, Xu Ma, Yayi Wei

JM3, Vol. 21, Issue 04, 043204, (December 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.4.043204

KEYWORDS: Source mask optimization, Extreme ultraviolet lithography, Diffraction, Nanoimprint lithography, Lithography, Genetic algorithms, Mathematical optimization, Extreme ultraviolet, Lithographic illumination, Incident light

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Proceedings Article | 26 May 2022 Poster + Presentation + Paper

Optimization of the EUV mask structures for mitigating the forbidden pitch in 5nm node

Ling Ma, Lisong Dong, Taian Fan, Yayi Wei

Proceedings Volume 12052, 1205214 (2022) https://doi.org/10.1117/12.2622286

KEYWORDS: Photomasks, Diffraction, Nanoimprint lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Lithographic illumination, Lithography, Metals, Source mask optimization, Molybdenum

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Proceedings Article | 26 May 2022 Poster + Presentation + Paper

Source optimization for forbidden pitch resolving in metal layer of 5nm technology node

Ling Ma, Lisong Dong, Taian Fan, Yayi Wei

Proceedings Volume 12052, 1205218 (2022) https://doi.org/10.1117/12.2614008

KEYWORDS: Nanoimprint lithography, Extreme ultraviolet lithography, Lithography, Deep ultraviolet, Lithographic illumination, Metals, Photomasks, Extreme ultraviolet, SRAF, Image quality

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Proceedings Article | 26 May 2022 Presentation + Paper

A novel contrast-aware SMO at 7nm technology node

Xiaojing Su, Lisong Dong, Yayi Wei, Yajuan Su

Proceedings Volume 12052, 120520H (2022) https://doi.org/10.1117/12.2614140

KEYWORDS: Source mask optimization, Nanoimprint lithography, Photomasks, Lithography, Semiconducting wafers, SRAF, 3D modeling, Optimization (mathematics), Mirrors

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Proceedings Article | 25 May 2022 Presentation + Paper

Modeling of SiN inner spacer deposition in gate-all-around nanosheet FET process

Hua Shao, Rui Chen, Junjie Li, Guobin Bai, Chen Li, Qi Yan, Yayi Wei

Proceedings Volume 12055, 1205502 (2022) https://doi.org/10.1117/12.2612445

KEYWORDS: Low pressure chemical vapor deposition, Plasma enhanced chemical vapor deposition, Scanning electron microscopy, Silicon, Ions, Field effect transistors, Transmission electron microscopy, Process modeling, Deposition processes, Computer simulations

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Proceedings Article | 25 May 2022 Poster + Paper

Calibration of chemically amplified resist model to consider the top loss in projection lithography

Yunyun Hao, Lisong Dong, Yayi Wei

Proceedings Volume 12055, 120550R (2022) https://doi.org/10.1117/12.2613988

KEYWORDS: Calibration, Data modeling, Photoresist processing, Chemically amplified resists, Lithography

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Proceedings Article | 25 May 2022 Poster + Paper

Imaging quality evaluation of superlens based nanolithography

Lihong Liu, Huwen Ding, Lisong Dong, Libin Zhang, Yayi Wei

Proceedings Volume 12054, 120540C (2022) https://doi.org/10.1117/12.2628122

KEYWORDS: Dielectrics, Silver, Photoresist materials, 3D modeling, Polymethylmethacrylate, Nanolithography, Photomasks, Chromium, Metals

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SPIE Journal Paper | 21 December 2021

Aberration analysis and compensate method of fully connected neural network in deep ultraviolet lithography

Shuang Zhang, Libin Zhang, Tianyang Gai, Pengzheng Gao, Yayi Wei

OE, Vol. 60, Issue 12, 123105, (December 2021) https://doi.org/10.1117/12.10.1117/1.OE.60.12.123105

KEYWORDS: Lithography, Neural networks, Deep ultraviolet, Data modeling, Source mask optimization, Photomasks, Optical engineering, Zernike polynomials, Machine learning, Image enhancement

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SPIE Journal Paper | 22 November 2021

Hotspot detection in large-scale layout with proposal sampling and feature parameters optimization

Tianyang Gai, Ying Chen, Xiaojing Su, Tong Qu, Shuhan Wang, Yajuan Su, Yayi Wei

JM3, Vol. 20, Issue 04, 041208, (November 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.4.041208

KEYWORDS: Feature extraction, Sensors, Lithography, Data modeling, Convolution, Performance modeling, Neural networks, Visualization, Machine learning, Image processing

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SPIE Journal Paper | 3 November 2021

Rigorous EUV absorber model for the mask modeling with deep learning techniques

Pengpeng Yuan, Peng Xu, Taian Fan, Yayi Wei

JM3, Vol. 20, Issue 04, 041207, (November 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.4.041207

KEYWORDS: Near field, Extreme ultraviolet, Photomasks, 3D modeling, Gallium nitride, Finite element methods, Process modeling, Data modeling, Near field optics, Electronic filtering

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Proceedings Article | 12 October 2021 Presentation + Paper

Acceleration method for source mask optimization at 7nm technology node

Xiaojing Su, Lisong Dong, Yunyun Hao, Yajuan Su, Yayi Wei

Proceedings Volume 11855, 118550Y (2021) https://doi.org/10.1117/12.2600884

KEYWORDS: Source mask optimization, Lithography, SRAF, Photomasks, Etching, Optical lithography

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Proceedings Article | 12 October 2021 Presentation + Paper

Litho-aware redundant local-loop insertion framework with convolutional neural network

Tong Qu, Yibo Lin, Tianyang Gai, Xiaojing Su, Shuhan Wang, Bojie Ma, Yajuan Su, Yayi Wei

Proceedings Volume 11855, 118550L (2021) https://doi.org/10.1117/12.2601685

KEYWORDS: Lithography, Convolutional neural networks, Computer simulations, Neural networks

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SPIE Journal Paper | 15 July 2021

Data augmentation in hotspot detection based on generative adversarial network

Shuhan Wang, Tianyang Gai, Tong Qu, Bojie Ma, Xiaojing Su, Lisong Dong, Libin Zhang, Peng Xu, Yajuan Su, Yayi Wei

JM3, Vol. 20, Issue 03, 034201, (July 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.3.034201

KEYWORDS: Gallium nitride, Data modeling, Performance modeling, Binary data, Machine learning, Statistical modeling, Lithography, Convolution, Computer programming, Microelectronics

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SPIE Journal Paper | 23 March 2021

Projection-based high coverage fast layout decomposing algorithm of metal layer for accelerating lithography friendly design at full chip level

Xiaojing Su, Dong Shen, Yayi Wei, Yajuan Su, Lisong Dong, Rui Chen, Tianyang Gai, Libin Zhang

JM3, Vol. 20, Issue 01, 013401, (March 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.1.013401

KEYWORDS: Metals, Lithography, Optical proximity correction, Standards development, Computer simulations, Logic, Transistors, System integration, Semiconductors, Semiconducting wafers

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Proceedings Article | 22 February 2021 Poster + Paper

A study on diffraction-based overlay measurement based on FDTD method

Buqing Xu, Qiang Wu, Rui Chen, Lisong Dong, Libin Zhang, Yayi Wei

Proceedings Volume 11611, 116113B (2021) https://doi.org/10.1117/12.2581909

KEYWORDS: Overlay metrology, Chemical mechanical planarization, Finite-difference time-domain method, Diffraction, Signal processing, Semiconductor manufacturing, Metrology, Visible radiation, Tolerancing, Reliability

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Proceedings Article | 22 February 2021 Poster + Paper

SRAF generation based on SGM/CTM contour line

Pengzheng Gao, Libin Zhang, Ya Yi Wei

Proceedings Volume 11613, 116130R (2021) https://doi.org/10.1117/12.2583694

KEYWORDS: SRAF, Resolution enhancement technologies, Source mask optimization, Optical proximity correction, Model-based design, Image processing, Image quality

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Proceedings Article | 22 February 2021 Poster + Presentation + Paper

Method to improve the overlay image contrast and optimize the sub-segmentation mark

Libin Zhang, Cong Lu, Yaobin Feng, Yayi Wei

Proceedings Volume 11611, 1161131 (2021) https://doi.org/10.1117/12.2583820

KEYWORDS: Overlay metrology, Metrology, Signal processing, Image processing, Image contrast enhancement, Transparency, Optical testing, Optical signal processing, Image enhancement, Image acquisition

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Proceedings Article | 22 February 2021 Presentation + Paper

Multi-level layout hotspot detection based on multi-classification with deep learning

Tianyang Gai, Tong Qu, Xiaojing Su, Shuhan Wang, Lisong Dong, Libin Zhang, Rui Chen, Yajuan Su, Yayi Wei, Tianchun Ye

Proceedings Volume 11614, 116140W (2021) https://doi.org/10.1117/12.2583726

KEYWORDS: Data modeling, Neural networks, Sensors, Performance modeling, Optics manufacturing, Machine learning, Lithography, Convolutional neural networks, Yield improvement, Statistical modeling

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Proceedings Article | 22 February 2021 Poster + Paper

Fast optical proximity correction based on graph convolution network

Shengen Zhang, Xu Ma, Junbi Zhang, Rui Chen, Yihua Pan, ChengZhen Yu, Lisong Dong, Yayi Wei, Gonzalo Arce

Proceedings Volume 11613, 116130V (2021) https://doi.org/10.1117/12.2583773

KEYWORDS: Optical proximity correction, Signal processing, Convolution, Imaging systems, Systems modeling, Photomasks, Optimization (mathematics), Machine learning, Lithography, Integrated circuits

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Proceedings Article | 22 February 2021 Poster + Paper

Lithography layout classification based on graph convolution network

Junbi Zhang, Xu Ma, Shengen Zhang, Xianqiang Zheng, Rui Chen, Yihua Pan, Lisong Dong, Yayi Wei, Gonzalo Arce

Proceedings Volume 11613, 116130U (2021) https://doi.org/10.1117/12.2583558

KEYWORDS: Lithography, Convolution, Signal processing, Network architectures, Image classification, Transform theory, Source mask optimization, Machine learning, Integrated circuits, Fourier transforms

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Proceedings Article | 22 February 2021 Presentation + Paper

Source mask optimization based on design pattern library at 7nm technology node

Xiaojing Su, Lisong Dong, Yayi Wei, Tianyang Gai, Yajuan Su, Rui Chen

Proceedings Volume 11614, 116140P (2021) https://doi.org/10.1117/12.2584716

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Proceedings Article | 20 September 2020 Presentation + Paper

Design rule optimization for via layers of multiple patterning solution at 7nm technology node

Xiaojing Su, Yayi Wei, Lisong Dong, Libin Zhang, Yajuan Su, Rui Chen

Proceedings Volume 11518, 115180O (2020) https://doi.org/10.1117/12.2573157

KEYWORDS: Optical lithography, Immersion lithography, Lithography, Photomasks, Source mask optimization, Manufacturing, Overlay metrology, Data processing, Standards development, Back end of line

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Proceedings Article | 20 September 2020 Poster + Paper

Analysis and mitigation of forbidden pitch effects for EUV lithography

Ling Ma, Lisong Dong, Taian Fan, Xiaojing Su, Jianfang He, Ruixuan Wu, Yumei Zhou, Yayi Wei

Proceedings Volume 11517, 115171B (2020) https://doi.org/10.1117/12.2573145

KEYWORDS: Extreme ultraviolet lithography, Lithography, Nanoimprint lithography, Computational lithography, Source mask optimization, Deep ultraviolet, Manufacturing, Photomasks, Optimization (mathematics)

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Proceedings Article | 23 March 2020 Paper

Comparison of different lithographic source optimization methods based on compressive sensing

Zhiqiang Wang, Xu Ma, Rui Chen, Gonzalo Arce, Lisong Dong, Hans-Juergen Stock, Yayi Wei

Proceedings Volume 11327, 1132716 (2020) https://doi.org/10.1117/12.2551037

KEYWORDS: Source mask optimization, Reconstruction algorithms, Lithography, Computer simulations, Imaging systems, Lithographic illumination, Compressed sensing, Computational lithography, Optical lithography

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Proceedings Article | 20 March 2020 Paper

High speed, high accuracy displacement extraction from sinusoidal like Moiré fringes in a novel optical encoding technology

Zhijian Zhong, Chenyi Li, Shiguang Li, Penghao Li, Qingcheng Ma, Haoyuan Zhao, Jing Zhang, Yayi Wei

Proceedings Volume 11325, 1132534 (2020) https://doi.org/10.1117/12.2563956

KEYWORDS: Computer programming, Calibration, Digital imaging, Optical sensors, Cameras, Wavelet transforms, Optical encoders, Fringe analysis, CMOS sensors, Fourier transforms

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SPIE Journal Paper | 18 November 2019

SoulNet: ultrafast optical source optimization utilizing generative neural networks for advanced lithography

Ying Chen, Yibo Lin, Lisong Dong, Tianyang Gai, Rui Chen, Yajuan Su, Yayi Wei, David Pan

JM3, Vol. 18, Issue 04, 043506, (November 2019) https://doi.org/10.1117/12.10.1117/1.JMM.18.4.043506

KEYWORDS: Lithography, Model-based design, Optimization (mathematics), Neural networks, Data modeling, Machine learning, Photomasks, Mathematical modeling, Ultrafast phenomena, Source mask optimization

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Proceedings Article | 26 September 2019 Paper

A fast DFM-driven standard cell qualification approach for critical layers of 14nm technology node

Xiaojing Su, Rui Chen, Yayi Wei, Yajuan Su, Lisong Dong

Proceedings Volume 11148, 1114818 (2019) https://doi.org/10.1117/12.2536626

KEYWORDS: Standards development, Optical proximity correction, Lithography, Manufacturing, Metals

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Proceedings Article | 26 September 2019 Paper

Impact of EUV multilayer mask defects on imaging performance and its correction methods

Yunyun Hao, Lisong Dong, Xi Chen, Rui Chen, Taian Fan, Yayi Wei, Tianchun Ye

Proceedings Volume 11147, 111471B (2019) https://doi.org/10.1117/12.2536707

KEYWORDS: Photomasks, Extreme ultraviolet, Lithography, Deep ultraviolet, Reflectivity, Manufacturing, Polishing, Plasma etching, Optical proximity correction, Extreme ultraviolet lithography

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Proceedings Article | 26 September 2019 Paper

A method for compensating lithographic influence of EUV mask blank defects by an advanced genetic algorithm

Ruixuan Wu, Lisong Dong, Rui Chen, Tianchun Ye, Yayi Wei

Proceedings Volume 11147, 111471U (2019) https://doi.org/10.1117/12.2536796

KEYWORDS: Photomasks, Lithography, Genetic algorithms, Extreme ultraviolet, Extreme ultraviolet lithography, Detection and tracking algorithms, Image quality, Manufacturing, High volume manufacturing, Optical proximity correction

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Proceedings Article | 26 September 2019 Paper

Impact of mask topography and flare on process window of EUV lithography

Rongbo Zhao, Lisong Dong, Rui Chen, Yayi Wei

Proceedings Volume 11147, 111471V (2019) https://doi.org/10.1117/12.2536871

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Lithography, Lithographic illumination, Fiber optic illuminators, Numerical simulations, Deep ultraviolet, Absorption, Reflectivity, Surface roughness

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SPIE Journal Paper | 30 May 2019

Probability prediction model for bridging defects induced by combined influences from lithography and etch variations

Xiaojing Su, Dong Shen, Yayi Wei, Taian Fan, Lisong Dong, Libin Zhang, Yajuan Su, Rui Chen, Tianchun Ye

JM3, Vol. 18, Issue 02, 023503, (May 2019) https://doi.org/10.1117/12.10.1117/1.JMM.18.2.023503

KEYWORDS: Line edge roughness, Failure analysis, Bridges, Etching, Lithography, Probability theory, Overlay metrology, Photomasks, Metals, Optical proximity correction

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Proceedings Article | 26 March 2019 Paper

A diffraction-based overlay model based on FDTD method

Buqing Xu, Ling Ma, Xiongfeng Zou, Lisong Dong, Yayi Wei

Proceedings Volume 10959, 109592X (2019) https://doi.org/10.1117/12.2514654

KEYWORDS: Overlay metrology, Finite-difference time-domain method, Diffraction, Metrology, Diffraction gratings, Reflection, Signal detection, Microelectronics

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Proceedings Article | 25 March 2019 Paper

Phase behavior of polymer blend materials for polystyrene-b-polycarbonate (PS-b-PC) block copolymers and corresponding homopolymer polystyrene

Weichen Liu, Baolin Zhang, Libin Zhang, Xiaobin He, Yayi Wei, Xin Wu, Junyan Dai, Ruicheng Ran, Guoping Mao

Proceedings Volume 10960, 109601J (2019) https://doi.org/10.1117/12.2514461

KEYWORDS: Polymers, Annealing, Directed self assembly, Coating, Microelectronics, Roads, Statistical analysis, Integrated circuits

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Proceedings Article | 20 March 2019 Paper

Design rule exploration for width sensitive zone for metal layers in advanced nodes

Xiaojing Su, Lisong Dong, Yayi Wei, Yajuan Su, Rui Chen, Chunshan Du

Proceedings Volume 10962, 1096212 (2019) https://doi.org/10.1117/12.2514783

KEYWORDS: Photomasks, Source mask optimization, Metals, Lithography, Etching, Semiconducting wafers, Electroluminescence, Molybdenum, Process modeling, Image classification

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Proceedings Article | 20 March 2019 Paper

Sample patterns extraction from layout automatically based on hierarchical cluster algorithm for lithography process optimization

Tianyang Gai, Ying Chen, Pengzheng Gao, Xiaojing Su, Lisong Dong, Yajuan Su, Yayi Wei, Tianchun Ye

Proceedings Volume 10962, 109620X (2019) https://doi.org/10.1117/12.2514177

KEYWORDS: Feature extraction, Lithography, Optimization (mathematics), Photomasks, Optical proximity correction, Source mask optimization, Machine learning

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Proceedings Article | 20 March 2019 Paper

SRAF rule extraction and insertion based on inverse lithography technology

Xiaojing Su, Pengzheng Gao, Yayi Wei, Weijie Shi

Proceedings Volume 10961, 109610P (2019) https://doi.org/10.1117/12.2511914

KEYWORDS: SRAF, Printing, Optical proximity correction, Lithography, Photomasks, Photovoltaics, Model-based design, Semiconducting wafers, Process modeling, Critical dimension metrology

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SPIE Journal Paper | 20 December 2018

Optimized parameters selected on the basis of the development defect model

Ling Ma, Buqing Xu, Qiang Wu, Lisong Dong, Taian Fan, Yuntao Jiang, Yayi Wei

JM3, Vol. 17, Issue 04, 043508, (December 2018) https://doi.org/10.1117/12.10.1117/1.JMM.17.4.043508

KEYWORDS: Semiconducting wafers, Lithography, Nitrogen, Photoresist materials, Particles, Microelectronics, Computer simulations, Fluctuations and noise, Semiconductor manufacturing, Polymers

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Proceedings Article | 3 October 2018 Paper

2D SRAF rule extraction for fast application based on model-based results

Yaoxuan Dai, Xiaojing Su, Pengzheng Gao, Yayi Wei, Yanrong Wang, Jing Zhang, Jiang Yan

Proceedings Volume 10810, 108101E (2018) https://doi.org/10.1117/12.2501455

KEYWORDS: SRAF, Model-based design, Microelectronics, Photomasks, Image classification, Extreme ultraviolet, Manufacturing, Roads, Extreme ultraviolet lithography

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Proceedings Article | 3 October 2018 Paper

Optimization of absorber and multilayer in EUV mask for 1D and 2D patterns

Zhizhen Yang, Taian Fan, Lisong Dong, Yayi Wei, Yanrong Wang, Jing Zhang, Jiang Yan

Proceedings Volume 10809, 1080919 (2018) https://doi.org/10.1117/12.2501463

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Lithography, Image resolution, Image quality, Light sources, Lithographic illumination, 3D modeling

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SPIE Journal Paper | 23 April 2018

Development defect model for immersion photolithography

Ling Ma, Qiang Wu, Lisong Dong, Qiaoqiao Li, Yayi Wei, Tianchun Ye

JM3, Vol. 17, Issue 02, 023502, (April 2018) https://doi.org/10.1117/12.10.1117/1.JMM.17.2.023502

KEYWORDS: Semiconducting wafers, Particles, Optical lithography, Nitrogen, Photomasks, Semiconductor manufacturing, Lithium, Lithography, Fluid dynamics, Photoresist materials

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With the continuous shrinking of semiconductor manufacturing technology node, the pattern size has become smaller and the pattern density has become higher. This can cause the lithography defects to be more difficult to remove, because the developing fragments have a larger relative surface area, and thus more sticky to the patterned substrate surface. Although the defect can be reduced or removed by the rinse process, it may require more time and effort. As we know, the process optimization is related to the co-optimization of the rinse dispense volume, the nitrogen gas dispense recipe, and the wafer rotation speed. In the limit that we push the three parameters to the highest level, the defect can be removed. However, the adverse effect is that the resist patterns may be damaged, such as pattern collapse. It may also cause an increase in the cost for the process and more trouble shooting time in finding an optimizing recipe. It will be very helpful that we can develop a simulation program that can do the optimization. We present a model based on viscous fluid dynamics and calculate the removing force distribution across the 300-mm-diameter wafer for the defect residual. We assume that the defect, mostly the partially deprotected and developed photoresist polymer residual. We assume that once the removing force made by a sum of the flowing rinse water, the nitrogen gas, and the centrifugal force by wafer rotation reached certain threshold level, the defect can be removed. We have performed some simulation study and compared our results with previous studies. We found that we can reproduce the defect distribution patterns, such as the two rings, from the previous studies. From the simulation, we have learned the interrelations between the three parameters and find that we can get the minimally required strength from the three parameters for defect removal. We have also studied the situation of the 450-mm diameter wafer, and we found that we can get the defect clean result with reduced wafer rotation speed. In summary, we have built a defect model for photolithography development that can model the defect removal mechanism during the rinse process.

Proceedings Article | 20 March 2018 Paper

Hybrid hotspot library building based on optical and geometry analysis at early stage for new node development

Ying Chen, Tianyang Gai, Xiaojing Su, Yayi Wei, Yajuan Su, Tianchun Ye

Proceedings Volume 10588, 1058811 (2018) https://doi.org/10.1117/12.2296834

KEYWORDS: Lithography, Image processing, Double patterning technology, Computer simulations, Optics manufacturing, Microelectronics, New and emerging technologies, Image analysis, Data processing, Image quality

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Proceedings Article | 20 March 2018 Paper

The method of optimizing mask parameter suitable for lithography process

Jianfang He, Lisong Dong, Libin Zhang, Lijun Zhao, Yayi Wei, Tianchun Ye

Proceedings Volume 10587, 1058719 (2018) https://doi.org/10.1117/12.2296861

KEYWORDS: Photomasks, Lithography, Source mask optimization, Calibration, Visualization, Metals, Geometrical optics, 3D acquisition, Manufacturing

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Proceedings Article | 16 October 2017 Paper

Applications of RCWA on EUV mask optics

Taian Fan, Lisong Dong, Yayi Wei

Proceedings Volume 10450, 104501X (2017) https://doi.org/10.1117/12.2280445

KEYWORDS: Photomasks, Extreme ultraviolet, Near field, Diffraction, 3D modeling, EUV optics, Spatial frequencies

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SPIE Journal Paper | 13 September 2017

Necessity of resist model in source mask optimization for negative tone development process

Lijun Zhao, Lisong Dong, Wenhui Chen, Yayi Wei, Tianchun Ye, Liwan Yue, Yuntao Jiang, Qiang Wu

JM3, Vol. 16, Issue 03, 033509, (September 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.3.033509

KEYWORDS: Source mask optimization, Data modeling, Calibration, Photoresist processing, Semiconducting wafers, Wafer-level optics, Image processing, Electroluminescence, Critical dimension metrology, Diffusion

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SPIE Journal Paper | 24 August 2017

Optimization of the focus monitor mark in immersion lithography according to illumination type

Lisong Dong, Libin Zhang, Xiaojing Su, Jianfang He, Yayi Wei

JM3, Vol. 16, Issue 03, 033505, (August 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.3.033505

KEYWORDS: Photomasks, Lithographic illumination, Immersion lithography, Phase shifts, Etching, Picosecond phenomena, Diffraction, Lithography, Scanners, Manufacturing

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Proceedings Article | 4 April 2017 Paper

Enhancing manufacturability of standard cells by using DTCO methodology

Lijun Zhao, Ying Chen, Xiaojing Su, Yajuan Su, Yayi Wei, Tianchun Ye

Proceedings Volume 10148, 101481G (2017) https://doi.org/10.1117/12.2263178

KEYWORDS: Lithography, Source mask optimization, Manufacturing, Optical lithography, Photomasks, 193nm lithography, Immersion lithography, Logic, Double patterning technology, Microelectronics, Metals

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Proceedings Article | 28 March 2017 Paper

New alignment mark design structures for higher diffraction order wafer quality enhancement

Libin Zhang, Yaobin Feng, Lisong Dong, Xiaojing Su, Zhengguo Tian, Chao Fang, Yayi Wei, Tianchun Ye

Proceedings Volume 10145, 101452C (2017) https://doi.org/10.1117/12.2257627

KEYWORDS: Optical alignment, Diffraction, Semiconducting wafers, Structural design, Overlay metrology, Optical design, Diffraction gratings, Interfaces, Process control, Manufacturing, Scanners, Oxides, Lithography, Absorption

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Proceedings Article | 28 March 2017 Paper

Hotspots fixing flow in NTD process by using DTCO methodology at 10nm metal 1 layer

Xiaojing Su, Lisong Dong, Jiaxin Lin, Ying Chen, Yayi Wei, Tianchun Ye, Chunshan Du, Feng Shao, Recco Zhang, Yu Zhu, Junjiang Lei, Minghui Fan

Proceedings Volume 10148, 1014817 (2017) https://doi.org/10.1117/12.2257786

KEYWORDS: Electroluminescence, Photovoltaics, Solar cells, Optimization (mathematics), Resolution enhancement technologies, Image processing, Molybdenum, Photomasks, Metals, Optical lithography, Lithography, Process modeling, Source mask optimization, Lead

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Proceedings Article | 24 March 2017 Paper

Improving the topography performance of ion implantation resist

Lisong Dong, Wenhui Chen, Xiaojing Su, Yayi Wei

Proceedings Volume 10147, 101471E (2017) https://doi.org/10.1117/12.2257776

KEYWORDS: Ion implantation, Lithography, Refractive index, Oxides, Optical lithography, Reflectivity, Silicon, Reflection, Metrology

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SPIE Journal Paper | 20 December 2016

Optimization of resist parameters to improve the profile and process window of the contact pattern in advanced node

Lisong Dong, Libin Zhang, Xiaojing Su, Zhiyang Song, Yayi Wei, Tianchun Ye

JM3, Vol. 15, Issue 04, 043509, (December 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.4.043509

KEYWORDS: Photoresist processing, Photomasks, Critical dimension metrology, Lithography, Semiconducting wafers, Electroluminescence, Process modeling, Optimization (mathematics), Refractive index, Binary data

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SPIE Journal Paper | 14 October 2016

Analysis of multi-e-beam lithography for cutting layers at 7-nm node

Lijun Zhao, Yayi Wei, Tianchun Ye

JM3, Vol. 15, Issue 04, 043501, (October 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.4.043501

KEYWORDS: Lithography, Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Metals, Critical dimension metrology, Semiconducting wafers, Line width roughness, Optical lithography, Line edge roughness

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Proceedings Article | 16 March 2016 Paper

Design technology co-optimization for 14/10nm metal1 double patterning layer

Yingli Duan, Xiaojing Su, Ying Chen, Yajuan Su, Feng Shao, Recco Zhang, Junjiang Lei, Yayi Wei

Proceedings Volume 9781, 97810X (2016) https://doi.org/10.1117/12.2218711

KEYWORDS: Manufacturing, Double patterning technology, Lithography, Analytical research, Algorithm development, Optical proximity correction, New and emerging technologies, Optical lithography, Optimization (mathematics), Immersion lithography, Source mask optimization, Design for manufacturing, Metals, Photomasks

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Proceedings Article | 8 March 2016 Paper

A novel mask structure for measuring the defocus of scanner

Lisong Dong, Zhiyang Song, Xiaojing Su, Yayi Wei

Proceedings Volume 9778, 97782A (2016) https://doi.org/10.1117/12.2218764

KEYWORDS: Photomasks, Diffraction, Scanners, Phase shifts, Lithography, Opacity, Diffraction gratings, Immersion lithography, Projection systems, Microelectronics

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SPIE Journal Paper | 23 November 2015

Efficient source mask optimization method for reduction of computational lithography cycles and enhancement of process-window predictability

Moran Guo, Zhiyang Song, Yaobin Feng, Zhengguo Tian, Qingchen Cao, Yayi Wei

JM3, Vol. 14, Issue 04, 043507, (November 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.4.043507

KEYWORDS: Electroluminescence, Source mask optimization, Photomasks, Optical proximity correction, Computational lithography, Diffractive optical elements, Metals, Lithography, Manufacturing, Optimization (mathematics)

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Proceedings Article | 20 March 2015 Paper

Thickness optimization for lithography process on silicon substrate

Xiaojing Su, Yajuan Su, Yansong Liu, Fong Chen, Zhimin Liu, Wei Zhang, Bifeng Li, Tao Gao, Yayi Wei

Proceedings Volume 9425, 94251Z (2015) https://doi.org/10.1117/12.2085656

KEYWORDS: Reflectivity, Electroluminescence, Lithography, Refractive index, Etching, Critical dimension metrology, Silicon, Interfaces, Reflection, Photoresist processing

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Proceedings Article | 18 March 2015 Paper

Focus shift impacted by mask 3D and comparison between Att. PSM and OMOG

Yansong Liu, Xiaojing Su, LiSong Dong, Zhiyang Song, Moran Guo, Yajuan Su, Yayi Wei

Proceedings Volume 9426, 94261H (2015) https://doi.org/10.1117/12.2085659

KEYWORDS: Photomasks, Optical proximity correction, Semiconducting wafers, Lithography, Phase shifts, Opacity, Source mask optimization, Critical dimension metrology, Electroluminescence, Nanoimprint lithography

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Proceedings Article | 2 April 2014 Paper

Evaluation of lens heating effect in high transmission NTD processes at the 20nm technology node

Bumhwan Jeon, Sam Lee, Lokesh Subramany, Chen Li, Shyam Pal, Sheldon Meyers, Sohan Mehta, Yayi Wei, David Cho

Proceedings Volume 9050, 90501U (2014) https://doi.org/10.1117/12.2034206

KEYWORDS: Semiconducting wafers, Reticles, Calibration, Photomasks, Critical dimension metrology, Source mask optimization, Computational modeling, Optical lithography, Wavefronts, Overlay metrology

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Proceedings Article | 28 March 2014 Paper

Analysis of mix-and-match litho approach for manufacturing 20nm logic-node products

Yayi Wei, Chao Zhao, Tianchun Ye

Proceedings Volume 9049, 90491Y (2014) https://doi.org/10.1117/12.2046095

KEYWORDS: Metals, Electron beam lithography, Photomasks, Manufacturing, Logic, Optical alignment, Double patterning technology, Lithography, Immersion lithography, Optical lithography

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Proceedings Article | 18 April 2013 Paper

High order wafer alignment for 20nm node logic process

Bumhwan Jeon, Shyam Pal, Sohan Mehta, Subramany Lokesh, Yun Tao Jiang, Chen Li, Mark Yelverton, Yayi Wei

Proceedings Volume 8681, 868110 (2013) https://doi.org/10.1117/12.2010709

KEYWORDS: Semiconducting wafers, Optical alignment, Distortion, Overlay metrology, Annealing, Transistors, Logic, Laser processing, Lithography, Semiconductor manufacturing

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Proceedings Article | 29 March 2013 Paper

20nm VIA BEOL patterning challenges

Chien-Hsien Lee, Sohan Singh Mehta, Wontae Hwang, Hui Husan Tsai, Michael Anderson, Yayi Wei, Matthew Herrick, Xiang Hu, Bumhwan Jeon, Shyam Pal

Proceedings Volume 8682, 86820D (2013) https://doi.org/10.1117/12.2011843

KEYWORDS: Etching, Optical lithography, Reactive ion etching, Critical dimension metrology, Back end of line, Semiconducting wafers, Photomasks, Double patterning technology, Dielectrics, Metals

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Proceedings Article | 29 March 2013 Paper

Investigation of trench and contact hole shrink mechanism in the negative tone develop process

Sohan Singh Mehta, Craig Higgins, Vikrant Chauhan, Shyam Pal, Hui Peng Koh, Jean Raymond Fakhoury, Shaowen Gao, Lokesh Subramany, Salman Iqbal, Bumhwan Jeon, Pedro Morrison, Chris Karanikas, Yayi Wei, David Cho

Proceedings Volume 8682, 86820O (2013) https://doi.org/10.1117/12.2012331

KEYWORDS: Diffusion, Critical dimension metrology, Polymers, Photoresist processing, Image processing, Manufacturing, Lithography, Optical lithography, Data modeling, Modulation

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Proceedings Article | 13 March 2012 Paper

Defects reduction at BEOL interconnect within 300mm manufacturing environment

Chien-Hsien Lee, Yayi Wei, Mark Kelling, ShaoBeng Law, Morris Mobley, K. C. Chai

Proceedings Volume 8326, 83261S (2012) https://doi.org/10.1117/12.915654

KEYWORDS: Chemical mechanical planarization, Deep ultraviolet, Reactive ion etching, Lithography, Semiconducting wafers, Photomasks, Back end of line, 193nm lithography, Immersion lithography, Etching

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Proceedings Article | 16 April 2011 Paper

Performance of tri-layer process required for 22 nm and beyond

Yayi Wei, Martin Glodde, Hakeem Yusuff, Margaret Lawson, Sang Yil Chang, Kwang Sub Yoon, Chung-Hsi Wu, Mark Kelling

Proceedings Volume 7972, 79722L (2011) https://doi.org/10.1117/12.879301

KEYWORDS: System on a chip, Etching, Silicon, Dielectrics, Semiconducting wafers, Particles, Coating, Reflectivity, Plasma etching, Plasma

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Proceedings Article | 16 April 2011 Paper

Systematic studies on reactive ion etch-induced deformations of organic underlayers

Martin Glodde, Sebastian Engelmann, Michael Guillorn, Sivananda Kanakasabapathy, Erin Mclellan, Chiew-Seng Koay, Yunpeng Yin, Muthumanickam Sankarapandian, John Arnold, Karen Petrillo, Markus Brink, Hiroyuki Miyazoe, E. Anuja de Silva, Hakeem Yusuff, Kwang-sub Yoon, Yayi Wei, Chung-hsi Wu, P. Rao Varanasi

Proceedings Volume 7972, 797216 (2011) https://doi.org/10.1117/12.879442

KEYWORDS: Reactive ion etching, Etching, Ions, Plasma, Hydrogen, Gases, Plasma etching, Silicon, Oxides, Electron beam lithography

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Proceedings Article | 1 April 2009 Paper

Reworkable spin-on trilayer materials: optimization of rework process and solutions for manufacturability

Ruzhi Zhang, Allen Timko, John Zook, Yayi Wei, Lyudmila Pylneva, Yi Yi, Chenghong Li, Hengpeng Wu, Dalil Rahman, Douglas McKenzie, Clement Anyadiegwu, Ping-Hung Lu, Mark Neisser, Ralph Dammel, Ron Bradbury, Timothy Lee

Proceedings Volume 7273, 72732O (2009) https://doi.org/10.1117/12.814708

KEYWORDS: Semiconducting wafers, Silicon, Coating, Inspection, Manufacturing, Chemistry, Fourier transforms, Defect inspection, Polymers, Photoresist materials

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Trilayer stacks with alternating etch selectivity were developed and extensively investigated for high NA immersion lithography at 32nm node and beyond. The conveyance of pattern transfer function from photoresist to Si-containing bottom anti-reflective coating (Si-BARC) and carbonrich underlayer hard-mask (UL) elegantly solved the small etch budget issue for ultra-thin photoresists in immersion lithography. However, due to the hybrid nature of Si-BARC, many different behaviors were observed in comparison to conventional BARC. Lithographic performance, stability, and reworkability were among the most challenging issues for trilayer scheme. Despite of the rapid improvement in lithographic performance and stability of trilayer materials reported by several papers, the rework and cleaning of trilayer materials by wet chemistry remained a challenging problem for manufacturability. The dual function requirement of reflection control and pattern transfer (i.e. hard-masking) for spin-on Si-BARC mandates hybrid materials. Si-BARC containing both organic moiety and inorganic backbone were extensively studied and demonstrated excellent performance. However, the hybrid nature of Si-BARC necessitates the revisit of different wet chemistries and process adjustment is essential to achieve desirable results. In addition, the similarity in chemical structures between Si-BARC and low-κ dielectrics demands subtle rework differentiation by wet chemistry from a chemistry point of view. In our development, we strived to identify rework solutions for trilayer materials in both front-end-of-line (FEOL) and back-end-of-line (BEOL) applications. Rework solutions including diluted HF, Piranha, and low-κ compatible strippers were extensively investigated. The optimization of solution mixture ratios and processing conditions was systematically studied. Thorough defect inspection after rework was performed to ensure the readiness for manufacturability. Extensive Piranha rework study on stack wafers and monitor wafers were carried out and excellent results are reported.

SPIE Press Book | 19 February 2009

Advanced Processes for 193-nm Immersion Lithography

Yayi Wei, Robert Brainard

KEYWORDS: Semiconducting wafers, Photoresist processing, Lithography, Etching, Line edge roughness, Water, Immersion lithography, Coating, Photomasks, Double patterning technology

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Advanced Processes for 193-nm Immersion Lithography

Proceedings Article | 4 December 2008 Paper

Spin-on trilayer scheme: enabling materials for extension of ArF immersion lithography to 32nm node and beyond

Ruzhi Zhang, Allen Timko, Lyudmila Pylneva, Jennifer Loch, Hengpeng Wu, David Abdallah, Richard Collett, Yayi Wei, Dalil Rahman, Douglas McKenzie, Ping-Hung Lu, Mark Neisser

Proceedings Volume 7140, 71402T (2008) https://doi.org/10.1117/12.804748

KEYWORDS: Silicon, Etching, Reflectivity, Semiconducting wafers, Polymers, Lithography, Photoresist materials, Immersion lithography, Coating, Fourier transforms

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Proceedings Article | 15 April 2008 Paper

Second-generation radiation sensitive 193-nm developable bottom antireflective coatings (DBARC): recent results

Francis Houlihan, Alberto Dioses, Lin Zhang, Joseph Oberlander, Alexandra Krawicz, Sumathy Vasanthan, Meng Li, Yayi Wei, PingHung Lu, Mark Neisser

Proceedings Volume 6923, 692330 (2008) https://doi.org/10.1117/12.781587

KEYWORDS: Reflectivity, Polymers, Fourier transforms, Bottom antireflective coatings, Plasma etching, Coating, Silicon, Reticles, Plasma, Prototyping

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Proceedings Article | 28 March 2008 Paper

Extreme ultraviolet resist outgassing and its effect on nearby optics

Gregory Denbeaux, Rashi Garg, Chimaobi Mbanaso, Justin Waterman, Leonid Yankulin, Alin Antohe, Yu-Jen Fan, Warren Montgomery, Kim Dean, Kevin Orvek, Andrea Wüest, Yayi Wei, Frank Goodwin, Obert Wood, Chiew-Seng Koay, Eric Gullikson, Andy Aquila, Charles Tarrio, Steven Grantham, Saša Bajt

Proceedings Volume 6921, 69211G (2008) https://doi.org/10.1117/12.772670

KEYWORDS: Mirrors, Reflectivity, EUV optics, Molecules, Extreme ultraviolet lithography, Contamination, Spectroscopy, Extreme ultraviolet, Photoresist materials, Calibration

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Proceedings Article | 26 March 2008 Paper

Formation mechanism of 193nm immersion defects and defect reduction strategies

Yayi Wei, Stefan Brandl, Frank Goodwin

Proceedings Volume 6923, 69231Y (2008) https://doi.org/10.1117/12.771221

KEYWORDS: Semiconducting wafers, Particles, Head, Scanning electron microscopy, Photoresist processing, Coating, Water, Modulation, Scanners, Interfaces

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Proceedings Article | 20 March 2008 Paper

Evaluation of EUV resist materials for use at the 32 nm half-pitch node

Thomas Wallow, Craig Higgins, Robert Brainard, Karen Petrillo, Warren Montgomery, Chiew-Seng Koay, Greg Denbeaux, Obert Wood, Yayi Wei

Proceedings Volume 6921, 69211F (2008) https://doi.org/10.1117/12.772943

KEYWORDS: Extreme ultraviolet, Optical lithography, Extreme ultraviolet lithography, Line edge roughness, Lithography, Interferometers, Photoresist materials, High volume manufacturing, Printing, Image resolution

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Proceedings Article | 2 April 2007 Paper

Performance of chemically amplified resists at half-pitch of 45 nm and below

Yayi Wei, Markus Bender, Wolf-Dieter Domke, Antje Laessig, Michael Sebald, Sven Trogisch, David Back

Proceedings Volume 6519, 65190R (2007) https://doi.org/10.1117/12.706887

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Line edge roughness, Photoresist processing, Lithography, Image processing, Chemically amplified resists, EUV optics, 193nm lithography, Image resolution

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Proceedings Article | 15 March 2007 Paper

Initial experience establishing an EUV baseline lithography process for manufacturability assessment

O. Wood, D. Back, R. Brainard, G. Denbeaux, D. Goldfarb, F. Goodwin, J. Hartley, K. Kimmel, C. Koay, B. La Fontaine, J. Mackey, B. Martinick, W. Montgomery, P. Naulleau, U. Okoroanyanwu, K. Petrillo, B. Pierson, M. Tittnich, S. Trogisch, T. Wallow, Y. Wei

Proceedings Volume 6517, 65170U (2007) https://doi.org/10.1117/12.714016

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Reticles, Photomasks, Contamination, Reflectivity, Microscopes, Image resolution, Manufacturing, Lithography

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SPIE Journal Paper | 1 July 2006

Evaluation of 193-nm immersion resist without topcoat

Yayi Wei, Nickolay Stepanenko, Antje Laessig, Lars Voelkel, Michael Sebald

JM3, Vol. 5, Issue 03, 033002, (July 2006) https://doi.org/10.1117/12.10.1117/1.2358128

KEYWORDS: Semiconducting wafers, Photoresist processing, Photomasks, Contamination, Lithography, Scanners, Line edge roughness, Binary data, Head, Critical dimension metrology

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Proceedings Article | 29 March 2006 Paper

Evaluation of 193nm immersion resist without topcoat

Yayi Wei, N. Stepanenko, A. Laessig, L. Voelkel, M. Sebald

Proceedings Volume 6153, 615305 (2006) https://doi.org/10.1117/12.655664

KEYWORDS: Semiconducting wafers, Photoresist processing, Photomasks, Binary data, Contamination, Scanners, Line edge roughness, Head, Lithography, Astatine

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Proceedings Article | 29 March 2006 Paper

Selection and evaluation of developer-soluble topcoat for 193nm immersion lithography

Yayi Wei, K. Petrillo, S. Brandl, F. Goodwin, P. Benson, R. Housley, U. Okoroanyanwu

Proceedings Volume 6153, 615306 (2006) https://doi.org/10.1117/12.655725

KEYWORDS: Semiconducting wafers, Photomasks, Immersion lithography, Photoresist processing, Line edge roughness, Lithography, Temperature metrology, Particles, Scanners, Head

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Proceedings Article | 22 March 2006 Open Access

A year in the life of immersion lithography at Albany Nanotech

Michael Tittnich, John Hartley, Greg Denbeaux, Uzo Okoroanyanwu, Harry Levinson, Karen Petrillo, Chris Robinson, Dario Gil, Dan Corliss, David Back, Stefan Brandl, Christian Schwarz, Frank Goodwin, Yayi Wei, Brian Martinick, Richard Housley, Peter Benson, Kevin Cummings

Proceedings Volume 6151, 615101 (2006) https://doi.org/10.1117/12.663785

KEYWORDS: Nanotechnology, Immersion lithography, Water, Lithography, Semiconductors, Semiconducting wafers, Photoresist developing, Thin film coatings, Scanners, Photoresist materials

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Proceedings Article | 20 March 2006 Paper

Investigation of immersion related defects using pre- and post-wet experiments

Stefan Brandl, Robert Watso, Bill Pierson, Steve Holmes, Yayi Wei, Karen Petrillo, Kevin Cummings, Frank Goodwin

Proceedings Volume 6154, 61540T (2006) https://doi.org/10.1117/12.656697

KEYWORDS: Semiconducting wafers, Digital watermarking, Photoresist processing, Polymers, Scanners, Coating, Defect inspection, Standards development, Platinum, Bridges

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Proceedings Article | 4 May 2005 Paper

Study of 157 nm resists with full field exposure tools

Yayi Wei, Nickolay Stepanenko, Michael Sebald, Christoph Hohle, Francis Houlihan, Raj Sakamuri, Alla Dimerli, Andrew Romano, Ralph Dammel

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.601811

KEYWORDS: Thin film coatings, Coating, Binary data, Photomasks, Lithography, Phase shifts, Semiconducting wafers, Contamination, Deep ultraviolet, Absorbance

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Proceedings Article | 4 May 2005 Paper

Study of barrier coats for protection against airborne contamination in 157-nm lithography

Francis Houlihan, Raj Sakamuri, Keino Hamilton, Alla Dimerli, David Rentkiewicz, Andrew Romano, Ralph Dammel, Yayi Wei, Nickolay Stepanenko, Michael Sebald, Christoph Hohle, Will Conley, Daniel Miller, Toshiro Itani, Masato Shigematsu, Etsuro Kawaguchi

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.601810

KEYWORDS: Thin film coatings, Coating, Contamination, Scanning electron microscopy, Semiconducting wafers, Binary data, Photomasks, Lithography, Deep ultraviolet, Phase shifts

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