Dr. Ruzhi M. Zhang Profile

Dr. Ruzhi M. Zhang

Senior Research Scientist at EMD Electronics

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Publications (6)

Proceedings Article | 20 March 2012 Paper

Combinatorial process optimization for negative photo-imageable spin-on dielectrics and investigation of post-apply bake and post-exposure bake interactions

Jihoon Kim, Ruzhi Zhang, Elizabeth Wolfer, Bharatkumar Patel, Medhat Toukhy, Zachary Bogusz, Tatsuro Nagahara

Proceedings Volume 8325, 83252A (2012) https://doi.org/10.1117/12.916453

KEYWORDS: Dielectrics, Lithography, Semiconducting wafers, Critical dimension metrology, Polymers, Photoresist materials, Image processing, Coating, Semiconductor manufacturing, Photoresist developing

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Proceedings Article | 16 April 2011 Paper

Negative photo-imageable spin-on dielectrics: report on progress, challenges, and opportunities

Ruzhi Zhang, Chien-Hsien Lee, Elizabeth Wolfer, Tatsuro Nagahara, Mark Neisser, Ralph Dammel

Proceedings Volume 7972, 79722K (2011) https://doi.org/10.1117/12.871114

KEYWORDS: Dielectrics, Lithography, Annealing, Semiconducting wafers, Manufacturing, Polymers, Fourier transforms, Semiconductors, Coating, Head-mounted displays

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Proceedings Article | 1 April 2009 Paper

Reworkable spin-on trilayer materials: optimization of rework process and solutions for manufacturability

Ruzhi Zhang, Allen Timko, John Zook, Yayi Wei, Lyudmila Pylneva, Yi Yi, Chenghong Li, Hengpeng Wu, Dalil Rahman, Douglas McKenzie, Clement Anyadiegwu, Ping-Hung Lu, Mark Neisser, Ralph Dammel, Ron Bradbury, Timothy Lee

Proceedings Volume 7273, 72732O (2009) https://doi.org/10.1117/12.814708

KEYWORDS: Semiconducting wafers, Silicon, Coating, Inspection, Manufacturing, Chemistry, Fourier transforms, Defect inspection, Polymers, Photoresist materials

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Trilayer stacks with alternating etch selectivity were developed and extensively investigated for high NA immersion lithography at 32nm node and beyond. The conveyance of pattern transfer function from photoresist to Si-containing bottom anti-reflective coating (Si-BARC) and carbonrich underlayer hard-mask (UL) elegantly solved the small etch budget issue for ultra-thin photoresists in immersion lithography. However, due to the hybrid nature of Si-BARC, many different behaviors were observed in comparison to conventional BARC. Lithographic performance, stability, and reworkability were among the most challenging issues for trilayer scheme. Despite of the rapid improvement in lithographic performance and stability of trilayer materials reported by several papers, the rework and cleaning of trilayer materials by wet chemistry remained a challenging problem for manufacturability. The dual function requirement of reflection control and pattern transfer (i.e. hard-masking) for spin-on Si-BARC mandates hybrid materials. Si-BARC containing both organic moiety and inorganic backbone were extensively studied and demonstrated excellent performance. However, the hybrid nature of Si-BARC necessitates the revisit of different wet chemistries and process adjustment is essential to achieve desirable results. In addition, the similarity in chemical structures between Si-BARC and low-κ dielectrics demands subtle rework differentiation by wet chemistry from a chemistry point of view. In our development, we strived to identify rework solutions for trilayer materials in both front-end-of-line (FEOL) and back-end-of-line (BEOL) applications. Rework solutions including diluted HF, Piranha, and low-κ compatible strippers were extensively investigated. The optimization of solution mixture ratios and processing conditions was systematically studied. Thorough defect inspection after rework was performed to ensure the readiness for manufacturability. Extensive Piranha rework study on stack wafers and monitor wafers were carried out and excellent results are reported.

Proceedings Article | 4 December 2008 Paper

Spin-on trilayer scheme: enabling materials for extension of ArF immersion lithography to 32nm node and beyond

Ruzhi Zhang, Allen Timko, Lyudmila Pylneva, Jennifer Loch, Hengpeng Wu, David Abdallah, Richard Collett, Yayi Wei, Dalil Rahman, Douglas McKenzie, Ping-Hung Lu, Mark Neisser

Proceedings Volume 7140, 71402T (2008) https://doi.org/10.1117/12.804748

KEYWORDS: Silicon, Etching, Reflectivity, Semiconducting wafers, Polymers, Lithography, Photoresist materials, Immersion lithography, Coating, Fourier transforms

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Proceedings Article | 15 April 2008 Paper

Etching spin-on trilayer masks

David Abdallah, Shinji Miyazaki, Aritaka Hishida, Allen Timko, Douglas McKenzie, Dalil Rahman, WooKyu Kim, Lyudmila Pylneva, Hengpeng Wu, Ruzhi Zhang, Ping-Hung Lu, Mark Neisser, Ralph Dammel

Proceedings Volume 6923, 69230U (2008) https://doi.org/10.1117/12.772691

KEYWORDS: Etching, Oxygen, Carbon, Semiconducting wafers, Reactive ion etching, Photomasks, Photoresist materials, Fourier transforms, Silicon, Lithography

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Proceedings Article | 2 April 2007 Paper

Spin-on trilayer approaches to high NA 193nm lithography

D. Abdallah, D. McKenzie, A. Timko, A. Dioses, F. Houlihan, D. Rahman, S. Miyazaki, R. Zhang, W. Kim, H. Wu, L. Pylneva, P.-H. Lu, M. Neisser, R. Dammel, J. Biafore

Proceedings Volume 6519, 65190M (2007) https://doi.org/10.1117/12.712700

KEYWORDS: Silicon, Etching, Fourier transforms, Carbon, Lithography, Antireflective coatings, Reflectivity, Semiconducting wafers, Photomasks, Silicon carbide

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Showing 5 of 6 publications

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