Mr. William J. Dauksher Profile

William J. Dauksher

at Motorola Solutions Inc

SPIE Involvement:

Author

Publications (34)

Proceedings Article | 3 May 2007 Paper

Electron beam directed repair of fused silica imprint templates

Gerard Schmid, Douglas Resnick, Rainer Fettig, Klaus Edinger, Steven Young, William Dauksher

Proceedings Volume 6533, 65330P (2007) https://doi.org/10.1117/12.736921

KEYWORDS: Silica, Photomasks, Lithography, Etching, Electron beams, Scanning electron microscopy, Chromium, Atomic force microscopy, Nanoimprint lithography, Liquids

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Proceedings Article | 15 March 2007 Paper

An electrical defectivity characterization of wafers imprinted with step and flash imprint lithography

W. Dauksher, N. Le, K. Gehoski, E. Ainley, K. Nordquist, N. Joshi

Proceedings Volume 6517, 651714 (2007) https://doi.org/10.1117/12.712376

KEYWORDS: Semiconducting wafers, Resistance, Lithography, Scanning electron microscopy, Etching, Wafer-level optics, Particles, Optical inspection, Manufacturing, Quartz

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Proceedings Article | 20 October 2006 Paper

Direct die-to-database electron-beam inspection of fused silica imprint templates

M. Tsuneoka, T. Hasebe, T. Tokumoto, C. Yan, M. Yamamoto, D. Resnick, E. Thompson, H. Wakamori, M. Inoue, Eric Ainley, Kevin Nordquist, William Dauksher

Proceedings Volume 6349, 63492D (2006) https://doi.org/10.1117/12.687196

KEYWORDS: Inspection, Silica, Semiconducting wafers, Metals, Lithography, Scanning electron microscopy, Photomasks, Chromium, Logic, Etching

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Proceedings Article | 24 March 2006 Paper

Imprint technology: A potential low-cost solution for sub-45nm device applications

Ngoc Le, William Dauksher, Kathy Gehoski, Kevin Nordquist, Eric Ainley, Pawitter Mangat

Proceedings Volume 6151, 61512K (2006) https://doi.org/10.1117/12.657488

KEYWORDS: Etching, Lithography, Oxides, Critical dimension metrology, Nanoimprint lithography, Scanning electron microscopy, Semiconducting wafers, Printing, Silicon, Plasma

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Proceedings Article | 23 March 2006 Paper

Defect inspection for imprint lithography using a die to database electron beam verification system

L. Jeff Myron, Ecron Thompson, Ian McMackin, Douglas Resnick, Tadashi Kitamura, Toshiaki Hasebe, Shinichi Nakazawa, Toshifumi Tokumoto, Eric Ainley, Kevin Nordquist, William Dauksher

Proceedings Volume 6151, 61510M (2006) https://doi.org/10.1117/12.659457

KEYWORDS: Inspection, Metals, Lithography, Silica, Logic, Semiconducting wafers, Defect detection, Photomasks, Chromium, Databases

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Imprint lithography has been included on the ITRS Lithography Roadmap at the 32 and 22 nm nodes. Step and Flash Imprint Lithography (S-FIL^TM) is a unique method for printing sub-100nm geometries. Relative to other imprinting processes S-FIL has the advantage that the template is transparent, thereby facilitating conventional overlay techniques. Further, S-FIL provides sub-100nm feature resolution without the significant expense of multielement, high quality projection optics or advanced illumination sources. However, since the technology is 1X, it is critical to address the infrastructure associated with the fabrication of templates. With respect to inspection, although defects as small as 70nm have been detected using optical techniques, it is clear that it will be necessary to take advantage of the resolution capabilities of electron beam inspection techniques. This paper reports the first systematic study of die-to-database electron beam inspection of patterns that were imprinted using an Imprio 250 system. The die-to-database inspection of the wafers was performed on an NGR2100 inspection system. Ultimately, the most desirable solution is to directly inspect the fused silica template. This paper also reports the results on the first initial experiments of direct inspection fused silica substrates at data rates of 200 MHz. Three different experiments were performed. In the first study, large (350-400nm) Metal 1 and contact features were imprinted and inspected as described above. Using a 12 nm pixel address grid, 24 nm defects were readily detected. The second experiment examined imprinted Metal 1 and Logic patterns with dimensions as small as 70nm. Using a pixel address of 3nm, and a defect threshold of 20 nm, a systematic study of the patterned arrays identified problem areas in the design of the pattern layout. Finally, initial inspection of 200mm fused silica patterned substrates has established proof of concept for direct inspection of imprint templates.

Proceedings Article | 23 March 2006 Paper

Evaluation of FIB and e-beam repairs for implementation on step and flash imprint lithography templates

S. Young, W. Dauksher, K. Nordquist, E. Ainley, K. Gehoski, A. Graupera, M. Moriarty

Proceedings Volume 6151, 61511D (2006) https://doi.org/10.1117/12.659529

KEYWORDS: Quartz, Chromium, Etching, Scanning electron microscopy, Photomasks, Atomic force microscopy, Image processing, Opacity, Semiconducting wafers, Lithography

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Proceedings Article | 6 May 2005 Paper

Development of an etch-definable lift-off process for use with step and flash imprint lithography

Ngoc Le, Kathleen Gehoski, William Dauksher, Jeffrey Baker, Doug Resnick, Laura Dues

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.605932

KEYWORDS: Etching, Lithography, Oxides, Metals, Aluminum, Semiconducting wafers, Plasmas, Scanning electron microscopy, Silicon, Semiconductors

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Along with other Next Generation Lithography (NGL) methods, imprint lithography has been included on the International Roadmap for Semiconductors (ITRS) for the 32 nm node, predicted to be production-ready by 20131. Step and Flash Imprint Lithography (S-FIL) is one of the imprinting technologies being pursued due to its impressive imprinting capabilities, where imprinted features of less than 30 nm have been demonstrated. Unlike optical-based lithography, S-FIL uses techniques similar to that of contact printing, and thereby does not require complex and expensive optics and light sources to create images. Couple this with a reliable pattern transfer, and S-FIL could become a contender as a viable NGL technology. Similar to other imprint lithography systems, S-FIL printed features possess a residual layer several hundred angstroms thick, which requires a breakthrough etch prior to etching a subsequent layer. Of a greater concern, however, is the etch barrier used as the imaging layer for S-FIL. The present silicon content is limited to approximately nine percent, and the formulation is optimized for dispensing and achieving mechanical properties for the imprinting process. As a result, oxygen-based plasmas typically used for pattern transferring more conventional bi-layer structures are not compatible with the current S-FIL resist stack, and therefore pose a challenge from an etch perspective. The development of a recent etch process incorporating an ammonia-based plasma was a key enabler for pattern transfer, and ongoing development is being done to improve critical dimensions (CD). In this study, we examined a lift-off process using S-FIL. The material stacks with and without a "glue" layer will be discussed, and the challenges from imprinting to etch will be shared. Finally, the lift-off process will be used to demonstrate fabrication of a surface acoustic wave (SAW) device in addition to demonstrating patterning of a non-reactive metallization scheme such as Ti/Au.

Proceedings Article | 6 May 2005 Paper

Indium tin oxide template development for step and flash imprint lithography

Kathleen Gehoski, Douglas Resnick, William Dauksher, Kevin Nordquist, Eric Ainley, Mark McCord, Mark Raphaelian, Harald Hess

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.606102

KEYWORDS: Chromium, Inspection, Etching, Lithography, Electron beams, Oxides, Indium, Tin, Quartz, Electron beam lithography

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Proceedings Article | 6 December 2004 Paper

Inspection and repair issues for Step and Flash Imprint Lithography templates

Kevin Nordquist, William Dauksher, David Mancini, Douglas Resnick, Harald Hess, Donald Pettibone, David Adler, Kirk Bertsche, Roy White, Jeffrey Csuy, David Lee

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569846

KEYWORDS: Inspection, Scanning electron microscopy, Photomasks, Semiconducting wafers, Oxides, Lithography, Etching, Deep ultraviolet, Quartz, Atomic force microscopy

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Step and Flash Imprint Lithography (S-FIL) 1X templates must eventually achieve and maintain the very low defect counts commensurate to current production masks. This requires typically fewer than ten or even no defects over the entire field and to minimize template fabrication costs and techniques must be identified to repair defects on templates when they do occur. We describe inspection and repair methodologies and how it can be applied to the imprint template. For inspection, test patterns etched onto the template enable both a die-to-die comparison, to find nuisance defects, and also calibration of sensitivity to different types of preprogrammed defects. A state of the art deep UV photomask inspection system (KLA-Tencor model 526) can detect these events with about 70 nm threshold for imprint masks using reflection mode contrast. Initial scans are made at various stages of the imprint process: the processed mask, after dicing, and after several imprints. The scans show mostly isolated point defects at a density of ~ 10 to 100 per mm². To repair defects, studies were undertaken using RAVE’s nm650 tool which is essentially an AFM platform that relies upon a nano-machining technique for opaque defect removal. On S-FIL templates, the standard deviation for depth repairs in quartz from the target depth was found to be 3.1 nm (1σ). The spread in edge placement data for opaque line protrusions was 21.5 nm (1σ). Trench cuts through lines were successfully created with a minimum size of about 55nm. The repairs on the template were verified by imprinting the features on wafers. The range of depth offsets studied (-15 to +15) had no bearing on the imprinting process and the edge placement on wafers replicated the edge placement of the repaired templates. Trench cuts on the template were successfully filled with the imprint monomer and measured slightly larger than the minimum gap size. Finally, the imprinted wafers were used to pattern transfer features into 100nm of oxide.

Proceedings Article | 2 June 2004 Paper

Shaped beam technology for nano-imprint mask lithography

Peter Hudek, Dirk Beyer, Timothy Groves, Olaf Fortagne, William Dauksher, David Mancini, Kevin Nordquist, Douglas Resnick

Proceedings Volume 5504, (2004) https://doi.org/10.1117/12.568035

KEYWORDS: Electron beam lithography, Lithography, Photomasks, Photoresist processing, Etching, Chromium, Beam shaping, Nanotechnology, Image processing, Semiconducting wafers

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Proceedings Article | 20 May 2004 Paper

Sub-80-nm contact hole patterning using Step and Flash Imprint Lithography

David Mancini, Ngoc Le, Kathleen Gehoski, Steven Young, William Dauksher, Kevin Nordquist, Douglas Resnick

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.537382

KEYWORDS: Etching, Lithography, Silicon, Critical dimension metrology, Semiconducting wafers, Scanning electron microscopy, Quartz, Oxides, Photomasks, Printing

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Proceedings Article | 20 May 2004 Paper

Development of phase shift masks for extreme ultraviolet lithography and optical evaluation of phase shift materials

Sang-In Han, Eric Weisbrod, James Wasson, Rich Gregory, Qianghua Xie, Pawitter Mangat, Scott Hector, William Dauksher, Kristine Rosfjord

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.535503

KEYWORDS: Reflectivity, Extreme ultraviolet, Etching, Phase shifts, Photomasks, Extreme ultraviolet lithography, Silicon, Scattering, Lithography, Chemical species

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Proceedings Article | 20 May 2004 Paper

Mesoscale modeling for SFIL simulating polymerization kinetics and densification

Ryan Burns, Stephen Johnson, Gerard Schmid, Eui Kim, Michael Dickey, Jason Meiring, Sean Burns, Nicholas Stacey, C. Grant Willson, Diana Convey, Yi Wei, Peter Fejes, Kathleen Gehoski, David Mancini, Kevin Nordquist, William Dauksher, Douglas Resnick

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.536216

KEYWORDS: Etching, Polymerization, Molecules, Monte Carlo methods, Finite element methods, Lithography, Ultraviolet radiation, Molecular interactions, Scanning electron microscopy, Optical lithography

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Proceedings Article | 14 May 2004 Paper

Single-layer and bilayer resist processes for EUV-type integrations

Richard Peters, Colita Parker, Jonathan Cobb, Eric Luckowski, Eric Weisbrod, Bill Dauksher

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535643

KEYWORDS: Photoresist processing, Etching, Semiconducting wafers, Resistance, Scanning electron microscopy, Optical lithography, Extreme ultraviolet lithography, Image processing, Lithography, Line edge roughness

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SPIE Journal Paper | 1 April 2004

Step and flash imprint lithography (S-FIL) is an attractive method for printing sub-100-nm geometries. Relative to other imprinting processes, S-FIL has the advantage of the template being transparent, thereby facilitating conventional overlay techniques.

Douglas Resnick, David Mancini, Kevin Nordquist, William Dauksher, Ian McMackin, Philip Schumaker, Ecron Thompson, S. Sreenivasan

JM3, Vol. 3, Issue 02, (April 2004) https://doi.org/10.1117/12.10.1117/1.1683261

KEYWORDS: Lithography, Printing, Etching, Semiconducting wafers, Photoresist processing, Image processing, Chromium, Distortion, Scanning electron microscopy, Silica

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Proceedings Article | 17 December 2003 Paper

Template fabrication for sub-80-nm contact hole patterning using step and flash imprint lithography

David Mancini, Kathleen Gehoski, William Dauksher, Kevin Nordquist, Douglas Resnick, Philip Schumaker, Ian McMackin

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518307

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Printing, Lithography, Etching, Photoresist processing, Cadmium, Scanning electron microscopy, Quartz, Electron beam lithography

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Proceedings Article | 17 December 2003 Paper

Effects of reticle reflectance on lithography

Kevin Cummings, Bernd Geh, Bing Lu, James Wasson, Eric Weisbrod, William Dauksher, Kevin Nordquist, Pawitter Mangat

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.516925

KEYWORDS: Photomasks, Reflectivity, Semiconducting wafers, Reticles, Reflection, Lithography, Quartz, Light scattering, Critical dimension metrology, Chromium

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Proceedings Article | 26 June 2003 Paper

Single-write self-aligned rim-phase-shift process

Cesar Garza, Wei Wu, Bernard Roman, Pawitter Mangat, Kevin Nordquist, William Dauksher

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485427

KEYWORDS: Phase shifts, Lithography, Photomasks, Optical lithography, Quartz, Inspection, Etching, Critical dimension metrology, Optical proximity correction, Manufacturing

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Proceedings Article | 16 June 2003 Paper

Employing Step and Flash imprint lithography for gate-level patterning of a MOSFET device

Britain Smith, Nicholas Stacey, J. Donnelly, David Onsongo, Todd Bailey, Chris Mackay, Douglas Resnick, William Dauksher, David Mancini, Kevin Nordquist, S. Sreenivasan, Sanjay Banerjee, John Ekerdt, Grant Willson

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.490142

KEYWORDS: Etching, Lithography, Field effect transistors, Optical alignment, Semiconducting wafers, Optical lithography, Photomasks, Oxides, Reactive ion etching, Halogens

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Proceedings Article | 16 June 2003 Open Access

Imprint lithography: lab curiosity or the real NGL

Douglas Resnick, William Dauksher, David Mancini, Kevin Nordquist, Todd Bailey, Stephen Johnson, Nicholas Stacey, John Ekerdt, C. Grant Willson, S. Sreenivasan, Norman Schumaker

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.490126

KEYWORDS: Etching, Lithography, Semiconducting wafers, Silicon, Nanoimprint lithography, Chromium, Optical alignment, Image processing, Oxides, Inspection

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Proceedings Article | 16 June 2003 Paper

Design and method of fabricating phase-shift masks for extreme-ultraviolet lithography by partial etching into the EUV multilayer mirror

Sang-In Han, Eric Weisbrod, Qianghua Xie, Pawitter Mangat, Scott Hector, William Dauksher

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484731

KEYWORDS: Reflectivity, Photomasks, Etching, Phase shifts, Tolerancing, Multilayers, Extreme ultraviolet lithography, Extreme ultraviolet, Signal attenuation, Chromium

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Proceedings Article | 16 June 2003 Paper

Advances in Step and Flash imprint lithography

Stephen Johnson, Todd Bailey, Michael Dickey, Britain Smith, Eunha Kim, Andrew Jamieson, Nicholas Stacey, John Ekerdt, C. Grant Willson, David Mancini, William Dauksher, Kevin Nordquist, Douglas Resnick

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484985

KEYWORDS: Etching, Oxygen, Lithography, Polymerization, Silicon, Data modeling, Semiconducting wafers, Statistical analysis, Inspection, Materials processing

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Proceedings Article | 16 June 2003 Paper

Analysis of critical dimension uniformity for Step and Flash imprint lithography

David Mancini, Kathleen Gehoski, William Dauksher, Kevin Nordquist, Douglas Resnick, Philip Schumaker, Ian McMackin

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484923

KEYWORDS: Semiconducting wafers, Lithography, Critical dimension metrology, Scanning electron microscopy, Quartz, Etching, Cadmium, Photomasks, Chromium, Photoresist processing

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Proceedings Article | 27 December 2002 Paper

Image placement error due to pattern transfer for EUV masks

Zorian Masnyj, James Wasson, Bing Lu, Eric Weisbrod, Pawitter Mangat, Kevin Nordquist, Eric Ainley, William Dauksher, Douglas Resnick

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.477479

KEYWORDS: Photomasks, Extreme ultraviolet, Chromium, Distortion, Lithography, Extreme ultraviolet lithography, Etching, Image processing, Reticles, Semiconducting wafers

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Proceedings Article | 27 December 2002 Paper

Critical dimension and image placement issues for step and flash imprint lithography templates

Kevin Nordquist, David Mancini, William Dauksher, Eric Ainley, Kathleen Gehoski, Douglas Resnick, Zorian Masnyj, Pawitter Mangat

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467753

KEYWORDS: Quartz, Chromium, Distortion, Overlay metrology, Lithography, Image processing, Photomasks, Critical dimension metrology, Fabrication, Etching

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Proceedings Article | 27 December 2002 Paper

Integration of antireflection coatings on EUV absorber stacks

James Wasson, Sang-In Han, N. Edwards, Eric Weisbrod, William Dauksher, Pawitter Mangat, Donald Pettibone

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468104

KEYWORDS: Inspection, Reflectivity, Reticles, Etching, Extreme ultraviolet, Multilayers, Chromium, Extreme ultraviolet lithography, Antireflective coatings, Photomasks

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SPIE Journal Paper | 1 October 2002

High resolution templates for step and flash imprint lithography

Douglas Resnick, William Dauksher, David Mancini, Kevin Nordquist, Eric Ainley, Kathleen Gehoski, Jeff Baker, Todd Bailey, B. Choi, Stephen Johnson, S. Sreenivasan, John Ekerdt, C. Grant Willson

JM3, Vol. 1, Issue 03, (October 2002) https://doi.org/10.1117/12.10.1117/1.1508410

KEYWORDS: Lithography, Scanning electron microscopy, Glasses, Printing, Overlay metrology, Distortion, Chromium, Photomasks, Solids, Defect inspection

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Proceedings Article | 24 July 2002 Paper

New methods for fabricating step and flash imprint lithography templates

Douglas Resnick, Todd Bailey, David Mancini, Kevin Nordquist, William Dauksher, Eric Ainley, A. Talin, Kathleen Gehoski, Jeff Baker, Byung Choi, Stephen Johnson, Matthew Colburn, Mario Meissl, S. Sreenivasan, John Ekerdt, C. Grant Willson

Proceedings Volume 4608, (2002) https://doi.org/10.1117/12.437269

KEYWORDS: Etching, Chromium, Oxides, Semiconducting wafers, Quartz, Glasses, Scanning electron microscopy, Lithography, Printing, Photomasks

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Proceedings Article | 1 July 2002 Paper

High-resolution templates for step and flash imprint lithography

Douglas Resnick, William Dauksher, David Mancini, Kevin Nordquist, Eric Ainley, Kathleen Gehoski, Jeff Baker, Todd Bailey, Byung Choi, Stephen Johnson, S. Sreenivasan, John Ekerdt, C. Grant Willson

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472293

KEYWORDS: Etching, Quartz, Chromium, Scanning electron microscopy, Photomasks, Semiconducting wafers, Glasses, Lithography, Printing, Oxides

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Proceedings Article | 22 January 2001 Paper

Fabrication process and transmission characteristics of SCALPEL mask blanks with thin SiNx membranes

Sang-In Han, Pawitter Mangat, William Dauksher, Michael Chor, James Liddle, Anthony Novembre

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410751

KEYWORDS: Photomasks, Etching, Charged-particle lithography, Silicon, Semiconducting wafers, Refraction, Silicon films, Scattering, Low pressure chemical vapor deposition, Chromium

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Proceedings Article | 25 June 1999 Paper

Advanced negative i-line resist development on metal surfaces for next-generation lithography mask fabrication

Craig Ghelli, David Mancini, Douglas Resnick, Pawitter Mangat, William Dauksher

Proceedings Volume 3676, (1999) https://doi.org/10.1117/12.351117

KEYWORDS: Metals, Extreme ultraviolet lithography, Antireflective coatings, Silicon, Lithography, Charged-particle lithography, Mask making, Photomasks, Semiconducting wafers, Scanning electron microscopy

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Proceedings Article | 5 June 1998 Paper

Characterization of oxynitride hard mask removal processes for refractory x-ray mask fabrication

Cameron Brooks, Douglas Benoit, Kenneth Racette, Denise Puisto, Renu Whig, William Dauksher, Kevin Cummings

Proceedings Volume 3331, (1998) https://doi.org/10.1117/12.309578

KEYWORDS: Photomasks, X-rays, Etching, Image processing, Hydrogen, X-ray imaging, Chemistry, Silicon, Mask making, Plasma

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Proceedings Article | 27 May 1996 Paper

Development of two new positive DUV photoresists for use with direct-write e-beam lithography

David Mancini, Douglas Resnick, Kevin Nordquist, William Dauksher, James Thackeray, Mark McCord

Proceedings Volume 2723, (1996) https://doi.org/10.1117/12.240461

KEYWORDS: Ultraviolet radiation, Semiconducting wafers, Deep ultraviolet, Etching, Electron beam lithography, Photoresist materials, Lithography, Silicon, Photoresist processing, Polymers

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Proceedings Article | 24 June 1993 Paper

Electrical and SEM testing of absorber defectivity in the plated-gold process for x-ray masks

Arnold Yanof, William Dauksher, Jack Livingston, L. Genduso

Proceedings Volume 1924, (1993) https://doi.org/10.1117/12.146523

KEYWORDS: Photomasks, X-rays, Plating, Semiconducting wafers, Inspection, Gold, Photoresist materials, Scanning electron microscopy, X-ray lithography, Particles

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Showing 5 of 34 publications

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