Dr. Ian M. McMackin Profile

Dr. Ian M. McMackin

at Applied Materials

SPIE Involvement:

Author

Publications (17)

Proceedings Article | 7 March 2014 Paper

Antireflective surface patterned by rolling mask lithography

Oliver Seitz, Joseph Geddes, Mukti Aryal, Joseph Perez, Jonathan Wassei, Ian McMackin, Boris Kobrin

Proceedings Volume 8974, 89740V (2014) https://doi.org/10.1117/12.2037415

KEYWORDS: Photomasks, Lithography, Antireflective coatings, Nanostructures, Reflectivity, Glasses, Cones, Optical lithography, Ultraviolet radiation, Refraction

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SPIE Journal Paper | 1 July 2010

Cleaning of step-and-flash imprint masks with damage-free nonacid technology

Sherjang Singh, Ssuwei Chen, Kosta Selinidis, Brian Fletcher, Ian McMackin, Ecron Thompson, Douglas Resnick, Peter Dress, Uwe Dietze

JM3, Vol. 9, Issue 03, 033003, (July 2010) https://doi.org/10.1117/12.10.1117/1.3462815

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Proceedings Article | 18 March 2009 Paper

High-resolution defect inspection of step-and-flash imprint lithography for 32-nm half-pitch patterning

Kosta Selinidis, Ecron Thompson, Ian McMackin, S.V. Sreenivasan, Douglas Resnick

Proceedings Volume 7271, 72711W (2009) https://doi.org/10.1117/12.815014

KEYWORDS: Photomasks, Inspection, Metals, Semiconducting wafers, Scanning electron microscopy, Defect detection, Lithography, Electron beam lithography, Defect inspection, Wafer inspection

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Proceedings Article | 18 March 2009 Paper

Automated imprint mask cleaning for step-and-flash imprint lithography

Sherjang Singh, Ssuwei Chen, Kosta Selinidis, Brian Fletcher, Ian McMackin, Ecron Thompson, Douglas Resnick, Peter Dress, Uwe Dietze

Proceedings Volume 7271, 72712H (2009) https://doi.org/10.1117/12.814290

KEYWORDS: Photomasks, Particles, Mask cleaning, Inspection, Lithography, Scanning electron microscopy, Photoresist processing, Nanoimprint lithography, Contamination, Semiconducting wafers

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Proceedings Article | 17 October 2008 Paper

Defect inspection of imprinted 32 nm half pitch patterns

Kosta Selinidis, Ecron Thompson, Ian McMackin, Joseph Perez, S. V. Sreenivasan, Douglas Resnick

Proceedings Volume 7122, 71222K (2008) https://doi.org/10.1117/12.801948

KEYWORDS: Photomasks, Inspection, Metals, Lithography, Semiconducting wafers, Scanning electron microscopy, Defect inspection, Etching, Image segmentation, Ultraviolet radiation

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Proceedings Article | 21 March 2008 Paper

High resolution defect inspection of step and flash imprint lithography for 32 nm half-pitch patterning

I. McMackin, J. Perez, K. Selinidis, J. Maltabes, D. Resnick, S. Sreenivassan

Proceedings Volume 6921, 69211L (2008) https://doi.org/10.1117/12.773970

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Particles, Lithography, Defect inspection, Etching, Optical lithography, Image processing, Manufacturing

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Proceedings Article | 16 November 2007 Paper

Defect reduction progress in step and flash imprint lithography

K. Selenidis, J. Maltabes, I. McMackin, J. Perez, W. Martin, D. Resnick, S. Sreenivasan

Proceedings Volume 6730, 67300F (2007) https://doi.org/10.1117/12.747565

KEYWORDS: Inspection, Semiconducting wafers, Lithography, Particles, Defect inspection, Ultraviolet radiation, Contamination, Ions, Image processing, Wafer inspection

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Proceedings Article | 21 March 2007 Paper

A study of imprint-specific defects in the step and flash imprint lithography process

J. Perez, K. Selinidis, S. Johnson, B. Fletcher, F. Xu, J. Maltabes, I. McMackin, D. Resnick, S. Sreenivasan

Proceedings Volume 6517, 65170L (2007) https://doi.org/10.1117/12.720673

KEYWORDS: Particles, Inspection, Lithography, Semiconducting wafers, Manufacturing, Photomasks, Optical lithography, Ultraviolet radiation, Defect detection, Silica

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Researchers have demonstrated that imprint lithography techniques have remarkable replication resolution and can pattern sub-5nm structures. However, a fully capable lithography approach needs to address several challenges in order to be useful in manufacturing. For successful manufacturing insertion of Step and Flash Imprint Lithography (S-FILTM) into a broad set of applications such as photonics, magnetic storage, and integrated circuits (ICs), the following practical process related challenges need to be addressed: (i) Printing sub-50nm structures with non-uniform pattern densities: (ii) Precise alignment and overlay with the ability to mix-and-match with photolithography; (iii) Availability of 1X templates; (iv) Achieving appropriate throughput for acceptable cost of ownership; and (v) Minimizing template and imprint process-induced defects to allow acceptable process yields. The last challenge - the ability to achieve low defect densities - is desirable for all applications. However, it is one of the biggest challenges for S-FIL to be accepted in IC fabrication. This article specifically focuses on this last challenge and presents the current status of defect reduction in S-FIL technology. The article starts out by providing a brief background of S-FIL technology, and by including a discussion of the overall status of S-FIL technology in Section 1. Next, an overview of the experiments performed including the defect inspection approaches used is provided in Section 2. Section 3 introduces the classes of defects that are relevant to the S-FIL process. It also provides recent defect data for each of these classes. Section 4 presents defect data gathered over the last three years and provides defect reduction trends over this period. Section 5 discusses the topic of template lifetime. Finally Section 6 provides some concluding remarks. The defect data presented here is based on a large number of short-loop experiments based on optical inspection of templates and wafers; these data are complemented by a modest number of high resolution e-beam inspections to provide insight into S-FIL specific defects at leading edge line widths.

Proceedings Article | 23 March 2006 Paper

Defect inspection for imprint lithography using a die to database electron beam verification system

L. Jeff Myron, Ecron Thompson, Ian McMackin, Douglas Resnick, Tadashi Kitamura, Toshiaki Hasebe, Shinichi Nakazawa, Toshifumi Tokumoto, Eric Ainley, Kevin Nordquist, William Dauksher

Proceedings Volume 6151, 61510M (2006) https://doi.org/10.1117/12.659457

KEYWORDS: Inspection, Metals, Lithography, Silica, Logic, Semiconducting wafers, Defect detection, Photomasks, Chromium, Databases

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Imprint lithography has been included on the ITRS Lithography Roadmap at the 32 and 22 nm nodes. Step and Flash Imprint Lithography (S-FIL^TM) is a unique method for printing sub-100nm geometries. Relative to other imprinting processes S-FIL has the advantage that the template is transparent, thereby facilitating conventional overlay techniques. Further, S-FIL provides sub-100nm feature resolution without the significant expense of multielement, high quality projection optics or advanced illumination sources. However, since the technology is 1X, it is critical to address the infrastructure associated with the fabrication of templates. With respect to inspection, although defects as small as 70nm have been detected using optical techniques, it is clear that it will be necessary to take advantage of the resolution capabilities of electron beam inspection techniques. This paper reports the first systematic study of die-to-database electron beam inspection of patterns that were imprinted using an Imprio 250 system. The die-to-database inspection of the wafers was performed on an NGR2100 inspection system. Ultimately, the most desirable solution is to directly inspect the fused silica template. This paper also reports the results on the first initial experiments of direct inspection fused silica substrates at data rates of 200 MHz. Three different experiments were performed. In the first study, large (350-400nm) Metal 1 and contact features were imprinted and inspected as described above. Using a 12 nm pixel address grid, 24 nm defects were readily detected. The second experiment examined imprinted Metal 1 and Logic patterns with dimensions as small as 70nm. Using a pixel address of 3nm, and a defect threshold of 20 nm, a systematic study of the patterned arrays identified problem areas in the design of the pattern layout. Finally, initial inspection of 200mm fused silica patterned substrates has established proof of concept for direct inspection of imprint templates.

Proceedings Article | 20 May 2004 Paper

Development of imprint materials for the Step and Flash Imprint Lithography process

Frank Xu, Nicholas Stacey, Mike Watts, Van Truskett, Ian McMackin, Jin Choi, Philip Schumaker, Ecron Thompson, Daniel Babbs, S. Sreenivasan, C. Grant Willson, Norman Schumaker

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.538734

KEYWORDS: Lithography, Ultraviolet radiation, Silicon, Optical lithography, Liquids, Semiconducting wafers, Etching, Optical alignment, Scanning electron microscopy, Interfaces

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Proceedings Article | 20 May 2004 Paper

Step and Repeat UV nanoimprint lithography tools and processes

Ian McMackin, Jin Choi, Philip Schumaker, Van Nguyen, Frank Xu, Ecron Thompson, Daniel Babbs, S. Sreenivasan, Mike Watts, Norman Schumaker

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.538733

KEYWORDS: Ultraviolet radiation, Lithography, Semiconducting wafers, Liquids, Process control, Optical lithography, Optical alignment, Etching, Nanoimprint lithography, Line edge roughness

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SPIE Journal Paper | 1 April 2004

Step and flash imprint lithography (S-FIL) is an attractive method for printing sub-100-nm geometries. Relative to other imprinting processes, S-FIL has the advantage of the template being transparent, thereby facilitating conventional overlay techniques.

Douglas Resnick, David Mancini, Kevin Nordquist, William Dauksher, Ian McMackin, Philip Schumaker, Ecron Thompson, S. Sreenivasan

JM3, Vol. 3, Issue 02, (April 2004) https://doi.org/10.1117/12.10.1117/1.1683261

KEYWORDS: Lithography, Printing, Etching, Semiconducting wafers, Photoresist processing, Image processing, Chromium, Distortion, Scanning electron microscopy, Silica

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Proceedings Article | 17 December 2003 Paper

Template fabrication for sub-80-nm contact hole patterning using step and flash imprint lithography

David Mancini, Kathleen Gehoski, William Dauksher, Kevin Nordquist, Douglas Resnick, Philip Schumaker, Ian McMackin

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518307

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Printing, Lithography, Etching, Photoresist processing, Cadmium, Scanning electron microscopy, Quartz, Electron beam lithography

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Proceedings Article | 16 June 2003 Paper

Analysis of critical dimension uniformity for Step and Flash imprint lithography

David Mancini, Kathleen Gehoski, William Dauksher, Kevin Nordquist, Douglas Resnick, Philip Schumaker, Ian McMackin

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484923

KEYWORDS: Semiconducting wafers, Lithography, Critical dimension metrology, Scanning electron microscopy, Quartz, Etching, Cadmium, Photomasks, Chromium, Photoresist processing

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Proceedings Article | 16 June 2003 Paper

Design and performance of a step and repeat imprinting machine

Ian McMackin, Philip Schumaker, Daniel Babbs, Jin Choi, Wenli Collison, S. Sreenivasan, Norman Schumaker, Michael Watts, Ronald Voisin

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.490133

KEYWORDS: Semiconducting wafers, Etching, Ultraviolet radiation, Lithography, Liquids, Optical alignment, Particles, Critical dimension metrology, Scanning electron microscopy, Optical lithography

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Proceedings Article | 12 July 2002 Paper

Direct to digital holography for semiconductor wafer defect detection and review

C. Thomas, Tracy Bahm, Larry Baylor, Philip Bingham, Steven Burns, Matt Chidley, Long Dai, Robert Delahanty, Christopher Doti, Ayman El-Khashab, Robert Fisher, Judd Gilbert, James Goddard, Gregory Hanson, Joel Hickson, Martin Hunt, Kathy Hylton, George John, Michael Jones, Ken Macdonald, Michael Mayo, Ian McMackin, Dave Patek, John Price, David Rasmussen, Louis Schaefer, Thomas Scheidt, Mark Schulze, Philip Schumaker, Bichuan Shen, Randall Smith, Allen Su, Kenneth Tobin, William Usry, Edgar Voelkl, Karsten Weber, Paul Jones, Robert Owen

Proceedings Volume 4692, (2002) https://doi.org/10.1117/12.475659

KEYWORDS: Holograms, Digital holography, Holography, Semiconducting wafers, Cameras, Deep ultraviolet, Spatial frequencies, Beam splitters, Digital video recorders, Fourier transforms

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Proceedings Article | 8 September 1998 Paper

Semiconductor and fiber laser development at Air Force Research Laboratory Directed Energy Directorate

Michael Gregg, David Bossert, David Gallant, Ian McMackin, John Marciante, Malcolm Wright

Proceedings Volume 3380, (1998) https://doi.org/10.1117/12.327183

KEYWORDS: Semiconductor lasers, Fiber lasers, Semiconductors, Laser development, Diodes, Laser applications, Directed energy weapons, Optical amplifiers, Analytical research, Fiber amplifiers

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Showing 5 of 17 publications

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