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Using rigorous lithographic simulations, we screen potential single element absorber materials for their optical properties and their optimal thickness for minimum best focus variation through pitch at wafer level. In addition, the M3D mitigation by absorber material is evaluated by process window comparison of foundry N5 specific logic clips.
In order to validate the rigorous simulation predictions and to test the processing feasibility of the alternative absorber materials, we have selected the candidate single elements Nickel and Cobalt for an experimental evaluation on wafer substrates. In this work, we present the film characterization as well as first patterning tests of these single element candidate absorber materials.
High-order aberration measurement technique based on a quadratic Zernike model with optimized source
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This course will provide attendees with a basic understanding of how mask topography affects the intended behavior of commonly used reticle enhancement technologies such as phase-shift masks, optical proximity correction, and subresolution assist features, as well as defect printability. Moreover, the importance of mask topographic effects for EUV-lithography and for alignment mark analysis will be discussed. The intended outcome of the course is to learn the physical basis for scattering effects resulting from the topography, what resources are available to quantify these effects, and what steps might be taken to achieve "pre-scatter" intended results.
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