Dr. Bram Slachter Profile

Dr. Bram Slachter

at ASML Netherlands BV

SPIE Involvement:

Author

Publications (9)

Proceedings Article | 13 November 2024 Presentation

High-NA stitching: how to evaluate performance?

Natalia Davydova, Airat Galiullin, Cyrus Tabery, Bram Slachter, Adam Lyons, Jeremy Chen, Nick Pellens, Vincent Wiaux, Tatiana Kovalevich, Lieve van Look, Ataklti Weldeslassie, Joost Bekaert

Proceedings Volume PC13215, PC132150A (2024) https://doi.org/10.1117/12.3038962

KEYWORDS: Scanners, Semiconducting wafers, Scanning electron microscopy, Photomasks, Overlay metrology, Optical proximity correction, Metrology, Image processing, Extreme ultraviolet lithography, EUV optics

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Proceedings Article | 26 August 2024 Paper

High NA EUV stitching: mask performance is a key

Natalia Davydova, Vincent Wiaux, Nick Pellens, Tatiana Kovalevich, Laura Huddleston, Frank Timmermans, Cyrus Tabery, Joost Bekaert, Lieve van Look, Alberto Colina, Bram Slachter, Nitesh Pandey, Stefan Hunsche, Ataklti Weldeslassie, Guillaume Libeert

Proceedings Volume 13177, 131770F (2024) https://doi.org/10.1117/12.3034393

KEYWORDS: Reflectivity, Optical proximity correction, Critical dimension metrology, Reflection, Light sources and illumination, Semiconducting wafers, Tantalum, Design, 3D mask effects, Scanners

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Proceedings Article | 21 November 2023 Presentation + Paper

Stitching for high-NA: zooming in on CDU budget

Natalia Davydova, Lieve van Look, Ataklti Weldeslassie, Vincent Wiaux, Laura Huddleston, Bram Slachter, Nick Pellens, Frank Timmermans, Friso Wittebrood, Eelco van Setten, Daniel Wilson

Proceedings Volume 12750, 1275002 (2023) https://doi.org/10.1117/12.2687703

KEYWORDS: Critical dimension metrology, Zoom lenses, Reticles, Metrology, Image quality, Extreme ultraviolet, Stochastic processes, Statistical analysis, Semiconducting wafers, Overlay metrology

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Proceedings Article | 28 April 2023 Presentation + Paper

Overview of stitching for high NA: imaging and overlay experimental and simulation results

Natalia Davydova, Lieve van Look, Vincent Wiaux, Joost Bekaert, Frank Timmermans, Eelco van Setten, Bram Slachter, Laura Huddleston, Claire van Lare, Rongkuo Zhao, Dezheng Sun, Ming-Chun Tien, Marcel Beckers, Simon van Gorp, Cees Lambregts, Chung-Tien Li, Arthur van de Nes, Koen D'Havé, Tatiana Kovalevich, Diederik de Bruin, Stephen Hsu, Rene Carpaij

Proceedings Volume 12494, 124940Q (2023) https://doi.org/10.1117/12.2658511

KEYWORDS: Photomasks, Optical proximity correction, Reflection, Critical dimension metrology, Tantalum, Reflectivity, Metrology, Semiconducting wafers, Scanners, Reticles

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Proceedings Article | 31 October 2022 Poster

Stitching for High NA: new insights and path forward

Natalia Davydova, Vincent Wiaux, Joost Bekaert, Frank Timmermans, Bram Slachter, Tatiana Kovalevich, Eelco van Setten, Marcel Beckers, Simon van Gorp, Rongkuo Zhao, Dezheng Sun, Ming-Chun Tien, Hoon Ser, Diederik de Bruin, Stephen Hsu, Rene Carpaij

Proceedings Volume PC12292, PC1229210 (2022) https://doi.org/10.1117/12.2653388

KEYWORDS: Tantalum, Image resolution, Source mask optimization, Scanners, Reflectivity, Optical proximity correction, Manufacturing, Extreme ultraviolet lithography, Control systems

Proceedings Article | 26 March 2019 Presentation + Paper

Impact of local variability on defect-aware process windows

Mark John Maslow, Hidetami Yaegashi, Andreas Frommhold, Guido Schiffelers, Felix Wahlisch, Gijsbert Rispens, Bram Slachter, Keisuke Yoshida, Arisa Hara, Noriaki Oikawa, Abhinav Pathak, Dorin Cerbu, Eric Hendrickx, Joost Bekaert

Proceedings Volume 10957, 109570H (2019) https://doi.org/10.1117/12.2514719

KEYWORDS: Critical dimension metrology, Etching, Metrology, Lithography, Semiconducting wafers, Photoresist processing, Statistical analysis, Optical lithography, Stochastic processes

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Proceedings Article | 13 March 2018 Paper

Assessment of local variability by high-throughput e-beam metrology for prediction of patterning defect probabilities

Fuming Wang , Stefan Hunsche, Roy Anunciado, Antonio Corradi , Hung Yu Tien, Peng Tang, Junwei Wei, Yongjun Wang, Wei Fang, Patrick Wong, Anton van Oosten, Koen van Ingen Schenau, Bram Slachter

Proceedings Volume 10585, 1058525 (2018) https://doi.org/10.1117/12.2297603

KEYWORDS: Semiconducting wafers, Stochastic processes, Scanning electron microscopy, Metrology, Electron beam lithography, Photomasks, Inspection, Critical dimension metrology, Optical proximity correction, Deep ultraviolet

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Proceedings Article | 13 March 2018 Presentation + Paper

Holistic approach for overlay and edge placement error to meet the 5nm technology node requirements

Jan Mulkens, Bram Slachter, Michael Kubis, Wim Tel, Paul Hinnen, Mark Maslow, Harm Dillen, Eric Ma, Kevin Chou, Xuedong Liu, Weiming Ren, Xuerang Hu, Fei Wang, Kevin Liu

Proceedings Volume 10585, 105851L (2018) https://doi.org/10.1117/12.2297283

KEYWORDS: Metrology, Overlay metrology, Scanners, Semiconducting wafers, Extreme ultraviolet lithography, Logic, Optical proximity correction, Lithography, Critical dimension metrology, Electron beams

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Proceedings Article | 28 March 2017 Presentation + Paper

Patterning control strategies for minimum edge placement error in logic devices

Jan Mulkens, Michael Hanna, Bram Slachter, Wim Tel, Michael Kubis, Mark Maslow, Chris Spence, Vadim Timoshkov

Proceedings Volume 10145, 1014505 (2017) https://doi.org/10.1117/12.2260155

KEYWORDS: Line edge roughness, Optical proximity correction, Optical lithography, Overlay metrology, Metrology, Lithography, Control systems, Extreme ultraviolet lithography, Extreme ultraviolet, Process control, Logic devices, Immersion lithography, Scanners, Semiconducting wafers, Critical dimension metrology, Line width roughness

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Showing 5 of 9 publications

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