Dr. Noriaki Oikawa Profile

Dr. Noriaki Oikawa

at Tokyo Electron Miyagi Ltd

SPIE Involvement:

Author

Publications (7)

Proceedings Article | 30 April 2023 Presentation

Etch optimization for defect reduction of EUV photoresists

Alexandra Krawicz, Katie Lutker-Lee, Sophie Thibaut, Eric Liu, Danilo De Simone, Arnaud Dauendorffer, Yannick Feurprier, Kathleen Nafus, Philippe Bézard, Philippe Foubert, Noriaki Oikawa

Proceedings Volume PC12499, PC1249903 (2023) https://doi.org/10.1117/12.2658971

KEYWORDS: Photoresist materials, Etching, Extreme ultraviolet lithography, Printing, Bridges, Thin film coatings, Stochastic processes, Scanners, Oxides, Metals

Read Abstract +

Proceedings Article | 11 November 2022 Presentation

Holistic litho-etch development to address patterning challenges towards high NA EUV

Seiji Nagahara, Arnaud Dauendorffer, Xiang Liu, Tomoya Onitsuka, Hisashi Genjima, Noriaki Nagamine, Yuhei Kuwahara, Yuya Kamei, Shinichiro Kawakami, Makoto Muramatsu, Satoru Shimura, Kathleen Nafus, Noriaki Oikawa, Yannick Feurprier, Marc Demand, Sophie Thibaut, Alexandra Krawicz, Steven Grzeskowiak, Katie Lutker-Lee, Eric Liu, Christopher Catano, Joshua LaRose, Jeffrey Shearer, Lior Huli, Philippe Foubert, Danilo De Simone

Proceedings Volume PC12292, PC122920N (2022) https://doi.org/10.1117/12.2642941

KEYWORDS: Extreme ultraviolet, Optical lithography, Extreme ultraviolet lithography, Etching, Plasma etching, Lithography, Yield improvement, Stochastic processes, Plasma, Photoresist materials

Read Abstract +

Proceedings Article | 21 June 2022 Paper

A lithographic and etching study on EUV contact hole patterning for stochastic process mitigation towards advanced device scaling

D. De Simone, P. Foubert, R. Fallica, A. Dauendorffer, K. Nafus, N. Oikawa, H. Oka, K. Kato

Proceedings Volume PC12051, PC120510P (2022) https://doi.org/10.1117/12.2614165

KEYWORDS: Etching, Photoresist processing, Optical lithography, Stochastic processes, Lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Critical dimension metrology, System on a chip, Metrology

Read Abstract +

Proceedings Article | 25 May 2022 Poster + Presentation + Paper

Approaches to enable patterning of tight pitches towards high NA EUV

Hiroki Tadatomo, Arnaud Dauendorffer, Tomoya Onitsuka, Hisashi Genjima, Yasuyuki Ido, Soichiro Okada, Yuhei Kuwahara, Arisa Hara, Congque Dinh, Seiji Fujimoto, Shinichiro Kawakami, Makoto Muramatsu, Satoru Shimura, Kathleen Nafus, Noriaki Oikawa, Kenta Ono, Yannick Feurprier, Marc Demand, Ainhoa Romo Negreira, Seiji Nagahara, Blanco Victor, Philippe Foubert, Danilo De Simone

Proceedings Volume 12056, 120560F (2022) https://doi.org/10.1117/12.2614012

KEYWORDS: Etching, Optical lithography, Extreme ultraviolet, Bridges, Extreme ultraviolet lithography, Inspection, Image processing

Read Abstract +

Extreme ultraviolet (EUV) lithography has been used for mass production for several years. Now the resolution limit of current 0.33 NA single exposure has been approaching. To enhance the resolution limit, high NA exposure tool has been developing. At the limit, not only the stochastic failures1, but also patterning trade-off has been becoming challenging. In this paper, to overcome the patterning trade-off of LS and CH, several approaches were demonstrated for both CAR and MOR. As for chemically amplified resist (CAR), to overcome the patterning trade-off of line and space, two different approaches were demonstrated. One was a developer rinse process optimization, and the other was a top deposition treatment during etching process. By using the two approaches, pitch 24 nm LS patterns were successfully transferred. As to CAR CH patterning, a new shrink technique during etch process was successfully tested for sub 15 nm hole patterning. No missing hole detected at 12 nm hole size by voltage contrast metrology. For tighter nodes, spin-on metal oxide resist (MOR) have been considering to be used because it offers a series of advantages. It has high sensitivity and resolution because of its high photon absorption and simple reaction mechanism. It also inherently has a higher etch resistance which enables resist thickness thinner and collapse margin higher. Spin-on process of MOR is expect to contribute high productivity which is essential for high volume manufacturing (HVM). Because defect reduction is one of the key points to enable MOR process for HVM, continuous investigation of defect mitigation has been done. For pitch 32 nm LS, the mitigation was confirmed by fine optimization with the combination of the etch process and the implementation of new under layers. As to pitch 28nm line and space, optimized illumination gave better defect process windows. Moreover, a new wet developer process was successfully proposed to prevent pitch 36 nm hexagonal pillars collapse during wet development with 25% higher EUV sensitivity.

Proceedings Article | 28 September 2021 Presentation

Addressing EUV patterning challenges towards the limits of NA 0.33 EUV exposure

Arnaud Dauendorffer, Tomoya Onitsuka, Hiroki Tadatomo, Keisuke Yoshida, Takahiro Shiozawa, Hisashi Genjima, Noriaki Nagamine, Yuya Kamei, Soichiro Okada, Shinichiro Kawakami, Makoto Muramatsu, Satoru Shimura, Kathleen Nafus, Noriaki Oikawa, Yannick Feurprier, Marc Demand, Ainhoa Romo Negreira, Seiji Nagahara, Congque Dinh, Luka Kljucar, Danilo De Simone, Philippe Foubert

Proceedings Volume 11854, 118540B (2021) https://doi.org/10.1117/12.2600860

KEYWORDS: Extreme ultraviolet lithography, Optical lithography, Metals, Etching, Stochastic processes, Semiconductors, Semiconductor manufacturing, Resistance, Photomasks, Particles

Read Abstract +

Proceedings Article | 26 March 2019 Presentation + Paper

Impact of local variability on defect-aware process windows

Mark John Maslow, Hidetami Yaegashi, Andreas Frommhold, Guido Schiffelers, Felix Wahlisch, Gijsbert Rispens, Bram Slachter, Keisuke Yoshida, Arisa Hara, Noriaki Oikawa, Abhinav Pathak, Dorin Cerbu, Eric Hendrickx, Joost Bekaert

Proceedings Volume 10957, 109570H (2019) https://doi.org/10.1117/12.2514719

KEYWORDS: Critical dimension metrology, Etching, Metrology, Lithography, Semiconducting wafers, Photoresist processing, Statistical analysis, Optical lithography, Stochastic processes

Read Abstract +

Proceedings Article | 21 March 2017 Presentation + Paper

Pattern defect reduction and LER improvement of chemo-epitaxy DSA process

Makoto Muramatsu, Takanori Nishi, Gen You, Yusuke Saito, Yasuyuki Ido, Noriaki Oikawa, Toshikatsu Tobana, Kiyohito Ito, Shinya Morikita, Takahiro Kitano

Proceedings Volume 10144, 101440Q (2017) https://doi.org/10.1117/12.2257952

KEYWORDS: Line edge roughness, Bridges, Etching, Lithography, Picosecond phenomena, Polymethylmethacrylate, Epitaxy, Chemical reactions, Computer simulations, High volume manufacturing, Directed self assembly, Photoresist processing, Image processing, Scanning electron microscopy, Line width roughness

Read Abstract +

Showing 5 of 7 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years