Mr. Mohamed Gheith Profile

Mohamed Gheith

RET Consulting Manager at Siemens EDA

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Author

Publications (5)

Proceedings Article | 16 March 2009 Paper

OPC for reduced process sensitivity in the double patterning flow

Mohamed Gheith, Le Hong, James Word

Proceedings Volume 7274, 727419 (2009) https://doi.org/10.1117/12.814337

KEYWORDS: Optical proximity correction, Double patterning technology, Photomasks, Visualization, Optical lithography, Semiconducting wafers, Image processing, Computer simulations, Distance measurement, Bridges

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Proceedings Article | 16 March 2009 Paper

Inverse vs. traditional OPC for the 22nm node

James Word, Yuri Granik, Marina Medvedeva, Sergei Rodin, Luigi Capodieci, Yunfei Deng, Jongwook Kye, Cyrus Tabery, Kenji Yoshimoto, Yi Zou, Hesham Diab, Mohamed Gheith, Mohamed Habib, Cynthia Zhu

Proceedings Volume 7274, 72743A (2009) https://doi.org/10.1117/12.814339

KEYWORDS: Optical proximity correction, Photomasks, Metals, Double patterning technology, Resolution enhancement technologies, Lithography, Manufacturing, Logic, Shape analysis, Visualization

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Proceedings Article | 4 April 2007 Paper

Setting MRC rules: balancing inspection capabilities, defect sensitivity, and OPC

Ian Stobert, James Bruce, Mohamed Gheith, Ahmed Seoud

Proceedings Volume 6518, 65180B (2007) https://doi.org/10.1117/12.712418

KEYWORDS: Optical proximity correction, Photomasks, Inspection, Semiconducting wafers, Monte Carlo methods, Defect inspection, Resolution enhancement technologies, Image quality, Defect detection, Printing

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Proceedings Article | 21 March 2007 Paper

Real-time VT5 model coverage calculations during OPC simulations

Ioana Graur, Scott Mansfield, Moahmed Gheith, Mohamed Al-Imam

Proceedings Volume 6521, 65211R (2007) https://doi.org/10.1117/12.712394

KEYWORDS: Data modeling, Calibration, Optical proximity correction, Computer simulations, Semiconducting wafers, Quantization, Process modeling, Mathematical modeling, Scanning electron microscopy, Image processing

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Proceedings Article | 21 March 2006 Paper

Improvements in post-OPC data constraints for enhanced process corrections

Ryan Burns, Yuping Cui, Zengqin Zhao, Ian Stobert, Pat LaCour, Ayman Yehia, Kareem Madkour, Mohamed Gheith, Ahmed Seoud

Proceedings Volume 6154, 61543G (2006) https://doi.org/10.1117/12.656649

KEYWORDS: Optical proximity correction, Photomasks, Inspection, Lithography, SRAF, Printing, Neck, Visualization, Standards development, Defect inspection

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Current state-of-the-art OPC (optical proximity correction) for 2-dimensional features consists of optimized fragmentation followed by site simulation and subsequent iterations to adjust fragment locations and minimize edge placement error (EPE). Internal and external constraints have historically been available in production quality code to limit the movement of certain fragments, and this provides additional control for OPC. Values for these constraints are left to engineering judgment, and can be based on lithography process limitations, mask house process limitations, or mask house inspection limitations. Often times mask house inspection limitations are used to define these constraints. However, these inspection restrictions are generally more complex than the 2 degrees of freedom provided in existing standard OPC software. Ideally, the most accurate and robust OPC software would match the movement constraints to the defect inspection requirements, as this prevents over-constraining the OPC solution. This work demonstrates significantly improved 2-D OPC correction results based on matching movement constraints to inspection limitations. Improvements are demonstrated on a created array of 2D designs as well as critical level chip designs used in 45nm technology. Enhancements to OPC efficacy are proven for several types of features. Improvements in overall EPE (edge placement error) are demonstrated for several different types of structures, including mushroom type landing pads, iso crosses, and H-bar structures. Reductions in corner rounding are evident for several 2-dimensional structures, and are shown with dense print image simulations. Dense arrays (SRAM) processed with the new constraints receive better overall corrections and convergence. Furthermore, OPC and ORC (optical rules checking) simulations on full chip test sites with the advanced constraints have resulted in tighter EPE distributions, and overall improved printing to target.

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