OPC for reduced process sensitivity in the double patterning flow

Mohamed Gheith; Le Hong; James Word

doi:10.1117/12.814337

16 March 2009 OPC for reduced process sensitivity in the double patterning flow

Mohamed Gheith, Le Hong, James Word

Proceedings Volume 7274, Optical Microlithography XXII; 727419 (2009) https://doi.org/10.1117/12.814337
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

The pitch-splitting of patterns using the litho-etch-litho-etch double patterning technique (DPT) may be required at the 22nm node. By splitting the layout into 2 masks, DPT introduces some new potential failure mechanisms. These new failure mechanisms can occur if the layer decomposition and subsequent OPC fail to account for interlayer misalignment and corner rounding of the decomposed masks. This paper will suggest novel solutions which can be taken during the OPC step to account of interlayer misalignment and corner rounding at decomposed edges. These methods will be shown to produce improved process window and reduced sensitivity to misalignment compared to a conventional OPC without interlayer awareness.

Citation Download Citation

Mohamed Gheith, Le Hong, and James Word "OPC for reduced process sensitivity in the double patterning flow", Proc. SPIE 7274, Optical Microlithography XXII, 727419 (16 March 2009); https://doi.org/10.1117/12.814337

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