Prof. Matthias Hammar Profile

Prof. Matthias Hammar

at KTH Royal Institute of Technology

SPIE Involvement:

Author

Publications (22)

Proceedings Article | 20 August 2020 Presentation

On-demand generation of entangled photons in the telecom C-band

Katharina Zeuner, Klaus Jöns, Lucas Schweickert, Carl Reuterskiöld Hedlund, Carlos Nunez Lobato, Thomas Lettner, Kai Wang, Samuel Gyger, Eva Schöll, Stephan Steinhauer, Mattias Hammar, Valery Zwiller

Proceedings Volume 11471, 1147103 (2020) https://doi.org/10.1117/12.2567202

KEYWORDS: Photons, Quantum dots, Quantum networks, Indium arsenide, Quantum communications, Polarization, Gallium arsenide, Epitaxy, Excitons, Semiconductors

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Proceedings Article | 28 April 2017 Presentation

Seminconductor photonic crystal membrane lasers for 3D integration on chip (Conference Presentation)

Weidong Zhou, Shih-Chia Liu, Deyin Zhao, Hongjun Yang, Mattias Hammar, Zhenqiang Ma

Proceedings Volume 10107, 101070H (2017) https://doi.org/10.1117/12.2256108

KEYWORDS: Laser applications, Photonic crystals, Laser crystals, Silicon photonics, Silicon, Optoelectronics, Semiconductor lasers, Vertical cavity surface emitting lasers, Compound semiconductors, Laser damage threshold

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Proceedings Article | 18 June 2013 Paper

Surface states characterization and simulation of Type-II In(Ga)Sb quantum dot structures for processing optimization of LWIR detectors

Qin Wang, Mina Rajabi, Amir Karim, Susanne Almqvist, Mietek Bakowski, Susan Savage, Jan Y. Andersson, Mats Göthelid, Shun Yu, Oscar Gustafsson, Mattias Hammar, Carl Asplund

Proceedings Volume 8704, 870433 (2013) https://doi.org/10.1117/12.2015966

KEYWORDS: Indium arsenide, Sensors, Etching, Long wavelength infrared, Photodetectors, Scanning electron microscopy, Quantum dots, Infrared detectors, Infrared sensors, Annealing

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Proceedings Article | 18 June 2013 Paper

In(Ga)Sb/InAs quantum dot based IR photodetectors with thermally activated photoresponse

Amir Karim, Oscar Gustafsson, Susan Savage, Qin Wang, Susanne Almqvist, Carl Asplund, Mattias Hammar, Jan Andersson

Proceedings Volume 8704, 870434 (2013) https://doi.org/10.1117/12.2015820

KEYWORDS: Indium arsenide, Sensors, Photodetectors, Quantum efficiency, Temperature metrology, Quantum well infrared photodetectors, Luminescence, Quantum dots, Thermography, Infrared detectors

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Proceedings Article | 31 May 2012 Paper

Analysis of surface oxides on narrow bandgap III-V semiconductors leading towards surface leakage free IR photodetectors

Qin Wang, Xun Li, Andy Zhang, Susanne Almqvist, Amir Karim, Bertrand Noharet, Jan Andersson, Mats Göthelid, Shun Yu, Oscar Gustafsson, Mattias Hammar, Carl Asplund, Emmanuelle Göthelid

Proceedings Volume 8353, 835311 (2012) https://doi.org/10.1117/12.919334

KEYWORDS: Indium arsenide, Gallium antimonide, Oxides, Annealing, Infrared detectors, Photodetectors, Carbon, Chemical analysis, Oxygen, Antimony

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Proceedings Article | 9 May 2012 Paper

Characterization of InSb QDs grown on InAs (100) substrate by MBE and MOVPE

Amir Karim, Oscar Gustafsson, Laiq Hussain, Qin Wang, Bertrand Noharet, Matthias Hammar, Jan Anderson, Jindong Song

Proceedings Volume 8439, 84391J (2012) https://doi.org/10.1117/12.922396

KEYWORDS: Indium arsenide, Transmission electron microscopy, Long wavelength infrared, Atomic force microscopy, Photodetectors, Luminescence, Thermography, Infrared radiation, Optical pumping, Optical properties

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Proceedings Article | 13 May 2010 Paper

Micro-optical elements functioning in non-visible spectral range

Qin Wang, Andy Zhang, Andreas Bergström, Vicky Huo, Susanne Almqvist, Wlodek Kaplan, Jan Andersson

Proceedings Volume 7716, 771609 (2010) https://doi.org/10.1117/12.853959

KEYWORDS: Molybdenum, Photoresist materials, Microlens, Ultraviolet radiation, Transmittance, Silicon, Microlens array, Etching, Optical properties, Reactive ion etching

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Proceedings Article | 28 April 2010 Paper

Single-mode InGaAs/GaAs 1.3-µm VCSELs based on a shallow intracavity patterning

Xingang Yu, Il-Sug Chung, Jesper Mørk, Yu Xiang, Jesper Berggren, Mattias Hammar

Proceedings Volume 7720, 772021 (2010) https://doi.org/10.1117/12.854443

KEYWORDS: Vertical cavity surface emitting lasers, Etching, Mirrors, Modulation, Quantum wells, Optical lithography, Silica, Gallium arsenide, Dielectrics, Absorption

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Proceedings Article | 7 May 2009 Paper

Development of IR imaging at IRnova

Henk Martijn, Carl Asplund, Hedda Malm, Sergiy Smuk, Linda Höglund, Oscar Gustafsson, Mattias Hammar, Staffan Hellström

Proceedings Volume 7298, 72980E (2009) https://doi.org/10.1117/12.820162

KEYWORDS: Quantum well infrared photodetectors, Indium arsenide, Gallium antimonide, Sensors, Superlattices, Long wavelength infrared, Staring arrays, Gallium arsenide, Quantum dots, Silicon

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Proceedings Article | 19 May 2008 Paper

Microstructured photonic crystal for single-mode long wavelength VCSELs

Renaud Stevens, Philippe Gilet, Alexandre Larrue, Laurent Grenouillet, Nicolas Olivier, Philippe Grosse, Karen Gilbert, Bertrand Hladys, Badhise Ben Bakir, Jesper Berggren, Mattias Hammar, Alexei Chelnokov

Proceedings Volume 6997, 69970X (2008) https://doi.org/10.1117/12.783317

KEYWORDS: Vertical cavity surface emitting lasers, Photonic crystals, Near field optics, Mirrors, Quantum wells, Near field, Wafer-level optics, Indium gallium arsenide, Semiconducting wafers, Oxidation

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Proceedings Article | 14 May 2008 Paper

Very compact FTTH Diplexer design using advanced wafer level fabrication methods

Christophe Kopp, Philippe Grosse, Philippe Gilet, Nicolas Olivier, Alexei Chelnokov, Laurent Fulbert, Stéphane Bernabé, Cyrille Rossat, Régis Hamelin, Ivar Hamberg, Lennart Lundqvist, Nicolae Chitica, Matthias Hammar, Jesper Berggren, Stéphane Junique, Qin Wang, Susanne Almqvist, Christian Sillans

Proceedings Volume 6992, 699203 (2008) https://doi.org/10.1117/12.779746

KEYWORDS: Vertical cavity surface emitting lasers, Photodiodes, Signal detection, Fiber to the x, Mirrors, Optics manufacturing, Receivers, Packaging, Reflectivity, Semiconducting wafers

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Proceedings Article | 8 May 2008 Paper

Single mode 1.3 um InGaAs VCSELs for access network applications

Petter Westbergh, Emma Söderberg, Johan Gustavsson, Peter Modh, Anders Larsson, Zhenzhong Zhang, Jesper Berggren, Mattias Hammar

Proceedings Volume 6997, 69970Y (2008) https://doi.org/10.1117/12.781294

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Modulation, Distortion, Indium gallium arsenide, Quantum wells, Single mode fibers, Eye, Digital modulation, Intermodulation

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Proceedings Article | 23 February 2007 Paper

1.3 µm VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells, and InAs/GaAs quantum dots — three candidates as active material

Ph. Gilet, E. Pougeoise, L. Grenouillet, Ph. Grosse, N. Olivier, S. Poncet, A. Chelnokov, J. M. Gérard, R. Stevens, R. Hamelin, M. Hammar, J. Berggren, P. Sundgren

Proceedings Volume 6484, 64840F (2007) https://doi.org/10.1117/12.700403

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Indium gallium arsenide, Quantum wells, Gallium arsenide, Aluminum, Quantum dots, Gallium, Continuous wave operation, Oxidation

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Proceedings Article | 31 August 2006 Paper

Multilayer InAs/InGaAs quantum dot structure grown by MOVPE for optoelectronic device applications

Qin Wang, Linda Höglund, Susanne Almqvist, Bertrand Noharet, Carl Asplund, Hedda Malm, Erik Petrini, Jan Andersson, Mattias Hammar

Proceedings Volume 6327, 63270L (2006) https://doi.org/10.1117/12.681624

KEYWORDS: Gallium arsenide, Electroluminescence, Semiconducting wafers, Waveguides, Quantum dots, Cladding, Optoelectronic devices, Luminescence, Signal detection, Optical amplifiers

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Proceedings Article | 6 July 2006 Paper

A novel electrical and optical confinement scheme for surface emitting optoelectronic devices

R. Marcks von Würtemberg, Z. Zhang, J. Berggren, M. Hammar

Proceedings Volume 6350, 63500J (2006) https://doi.org/10.1117/12.692904

KEYWORDS: Semiconducting wafers, Quantum wells, Gallium arsenide, Etching, Vertical cavity surface emitting lasers, Cladding, Crystals, Light emitting diodes, Dry etching, Indium gallium arsenide

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Proceedings Article | 21 April 2006 Paper

Experimental characteristics and analysis of transverse modes in 1.3-µm strained InGaAs quantum well VCSELs

E. Pougeoise, Ph. Gilet, Ph. Grosse, S. Poncet, A. Chelnokov, J.-M. Gérard, G. Bourgeois, R. Stevens, R. Hamelin, M. Hammar, J. Berggren, P. Sundgren, Sébastien Vilain, J.-S. Bouillard, G. Lerondel, R. Bachelot, P. Royer

Proceedings Volume 6185, 61850U (2006) https://doi.org/10.1117/12.662118

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Quantum wells, Indium gallium arsenide, Near field scanning optical microscopy, Near field optics, Continuous wave operation, Gallium arsenide, Optical fibers, Semiconducting wafers

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Proceedings Article | 10 February 2006 Paper

1.3 μm strained InGaAs quantum well VCSELs: operation characteristics and transverse modes analysis

E. Pougeoise, Ph. Gilet, Ph. Grosse, S. Poncet, A. Chelnokov, J.-M. Gérard, G. Bourgeois, R. Stevens, R. Hamelin, M. Hammar, J. Berggren, P. Sundgren

Proceedings Volume 6132, 613207 (2006) https://doi.org/10.1117/12.646140

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Indium gallium arsenide, Quantum wells, Continuous wave operation, Semiconducting wafers, Waveguides, Gallium arsenide, Pulsed laser operation, Temperature metrology

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Proceedings Article | 8 September 2004 Paper

Fabrication and performance of 1.3-µm vertical-cavity surface-emitting lasers with InGaAs quantum well active regions grown on GaAs substrates

Rickard Marcks von Wurtemberg, Petrus Sundgren, Jesper Berggren, Mattias Hammar, Marco Ghisoni, Vilhelm Oscarsson, Elsy Odling, Jessica Malmquist

Proceedings Volume 5453, (2004) https://doi.org/10.1117/12.547272

KEYWORDS: Vertical cavity surface emitting lasers, Silicon, Quantum wells, Indium gallium arsenide, Gallium arsenide, Temperature metrology, Polarization, Oxides, Reliability, Etching

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Proceedings Article | 17 June 2003 Paper

1.3-um InGaAs(N)/GaAs vertical-cavity lasers

Sebastian Mogg, Petrus Sundgren, Carl Asplund, Mattias Hammar, Ulf Christiansson, Thomas Aggerstam, Vilhelm Oscarsson, Christine Runnstrom, Elsy Odling, Jessica Malmquist

Proceedings Volume 4994, (2003) https://doi.org/10.1117/12.482854

KEYWORDS: Quantum wells, Indium gallium arsenide, Semiconducting wafers, Continuous wave operation, Gallium arsenide, Indium, Measurement devices, Heatsinks, Epitaxy

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Proceedings Article | 15 April 2003 Paper

1300-nm GaAs-based vertical-cavity lasers

Mattias Hammar, Carl Asplund, Petrus Sundgren, Sebastian Mogg, Ulf Christiansson, Thomas Aggerstam, Vilhelm Oscarsson, Christine Runnstroem, Elsy Oedling, Jessica Malmquist

Proceedings Volume 4942, (2003) https://doi.org/10.1117/12.470815

KEYWORDS: Quantum wells, Indium gallium arsenide, Doping, Semiconducting wafers, Reflectivity, Gallium arsenide, Indium, Interfaces, Mirrors, Gallium

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SPIE Journal Paper | 1 February 2000

Novel technologies for 1.55-um vertical cavity lasers

Klaus Streubel, Mattias Hammar, F. Salomonsson, J. Bentell, Sebastian Mogg, S. Rapp, Joel Jacquet, J. Boucart, Christophe Starck, Antonina Plais, F. Gaborit, E. Derouin, N. Bouche, Alok Rudra, Alexei Syrbu, Vladimir Iakovlev, Claude-Albert Berseth, O. Dehaese, Eli Kapon, H. Moussa, Isabelle Sagnes, R. Raj

OE, Vol. 39, Issue 02, (February 2000) https://doi.org/10.1117/12.10.1117/1.602387

KEYWORDS: Mirrors, Semiconducting wafers, Gallium arsenide, Reflectivity, Absorption, Continuous wave operation, Resistance, Optical engineering, Quantum wells

Proceedings Article | 6 August 1999 Paper

Long-wavelength vertical-cavity lasers

Proceedings Volume 3625, (1999) https://doi.org/10.1117/12.356889

KEYWORDS: Mirrors, Semiconducting wafers, Gallium arsenide, Continuous wave operation, Resistance, Reflectivity, Quantum wells, Absorption, Interfaces

Showing 5 of 22 publications

Conference Committee Involvement (1)

Micro-Optics, VCSELs, and Photonic Interconnects: Fabrication, Packaging, and Integration

3 April 2006 | Strasbourg, France

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