Experimental characteristics and analysis of transverse modes in 1.3-µm strained InGaAs quantum well VCSELs

E. Pougeoise; Ph. Gilet; Ph. Grosse; S. Poncet; A. Chelnokov; J.-M. Gérard; G. Bourgeois; R. Stevens; R. Hamelin; M. Hammar; J. Berggren; P. Sundgren; Sébastien Vilain; J.-S. Bouillard; G. Lerondel; R. Bachelot; P. Royer

doi:10.1117/12.662118

21 April 2006 Experimental characteristics and analysis of transverse modes in 1.3-μm strained InGaAs quantum well VCSELs

E. Pougeoise, Ph. Gilet, Ph. Grosse, S. Poncet, A. Chelnokov, J.-M. Gérard, G. Bourgeois, R. Stevens, R. Hamelin, M. Hammar, J. Berggren, P. Sundgren, Sébastien Vilain, J.-S. Bouillard, G. Lerondel, R. Bachelot, P. Royer

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Proceedings Volume 6185, Micro-Optics, VCSELs, and Photonic Interconnects II: Fabrication, Packaging, and Integration; 61850U (2006) https://doi.org/10.1117/12.662118
Event: SPIE Photonics Europe, 2006, Strasbourg, France

Abstract

In the context of optical interconnection applications, we report on results obtained on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs). Our devices are top p-type DBR oxide-confined VCSEL, grown by metalorganic vapour-phase epitaxy (MOVPE). These lasers exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm at room temperature is reached for a 4 μm oxide diameter VCSEL. The particular design of the active layer based on a large detuning between the gain maximum and the cavity resonance gives our devices a very specific thermal and modal behaviour. Therefore, we study the spectral and spatial distributions of the transverse modes by near field scanning optical microscopy using a micropolymer tip at the end of an optical fibre.

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E. Pougeoise, Ph. Gilet, Ph. Grosse, S. Poncet, A. Chelnokov, J.-M. Gérard, G. Bourgeois, R. Stevens, R. Hamelin, M. Hammar, J. Berggren, P. Sundgren, Sébastien Vilain, J.-S. Bouillard, G. Lerondel, R. Bachelot, and P. Royer "Experimental characteristics and analysis of transverse modes in 1.3-μm strained InGaAs quantum well VCSELs", Proc. SPIE 6185, Micro-Optics, VCSELs, and Photonic Interconnects II: Fabrication, Packaging, and Integration, 61850U (21 April 2006); https://doi.org/10.1117/12.662118

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KEYWORDS

Vertical cavity surface emitting lasers

Oxides

Quantum wells

Indium gallium arsenide

Near field scanning optical microscopy

Near field optics

Continuous wave operation

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