KEYWORDS: Optical lithography, Metals, Etching, Transistors, Atomic layer deposition, Silica, Inspection, Electrodes, Transmission electron microscopy, System on a chip
The surrounding-gate-transistor (SGT) is a vertical gate-all-around device with a new design to exploit natural area gain for further scaling the SRAM size beyond N5 node. One of the benefits in SGT is it can fully decouple the dependency of the gate length (Lg) and the source/drain (S/D) contact size from the contact gate pitch (CGP) scaling, which is seen as a hard limit for the conventional scaling. To fully realize the benefit of area gain and Lg scaling independent from lithography, the patterning challenges of 3D vertical device structure must be resolved. In this paper, we report the MOL patterning challenges in SGT device fabrication, such as Metal recess process, Bottom Contact formation (VBG), Cross point formation (XC), Top electrode (TE) patterning.
As conventional pitch scaling is saturating, scaling boosters such as buried power rail (BPR) [1-4] and its extension to backside power delivery (BSPDN) [5, 6] could provide 20% and 30% area gain [7], respectively. BPR can also help to improve SRAM design [8] and is a building block in novel architectures such as CFET [9, 10], for technology scaling beyond the 3 nm CMOS node. The two main features of BPR technology include: (i) the introduction of BPR metal within the fin module (fig. 1). Metal insertion in front-end-ofline (FEOL) has a risk of tool/wafer cross-contamination. Ensuring that BPR metal is fully encapsulated during contamination critical processes such as epitaxy, is therefore, essential. A proper choice of metal limits the risk of device performance/reliability degradation from metal diffusion & mechanical stress. (ii) The addition of VBPR via connections from M0A contact level to the BPR lines. Its challenges include high aspect ratio (AR) patterning, achieving low resistance (R) and reliable contact with BPR. This paper reports an overview of BPR/Via-to-BPR (VBPR) module development and metallization options at BPR and VBPR.
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