Mr. Ronald A. Arif Profile

Ronald A. Arif

at Veeco Instruments Inc

SPIE Involvement:

Author

Publications (14)

Proceedings Article | 5 March 2021 Presentation

High performance MOCVD for micro LED applications

Ronald Arif, Soo Min Lee, Drew Hanser, Mark McKee, Eric Armour, Bumjoon Kim, Ajit Paranjpe, Bojan Mitrovic, Terry Toh

Proceedings Volume 11706, 1170613 (2021) https://doi.org/10.1117/12.2578842

KEYWORDS: Photonics, Metalorganic chemical vapor deposition, Silicon, Semiconducting wafers, Sapphire, Gallium arsenide, Yield improvement, Vertical cavity surface emitting lasers, Three dimensional sensing, Telecommunications

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Proceedings Article | 9 March 2020 Presentation

High-performance As/P MOCVD platform for emerging photonics applications (Conference Presentation)

Ronald Arif, Mark McKee, Eric Armour, Weimin Dong, Alex Zhang, Bojan Mitrovic, Drew Hanser, Ajit Paranjpe

Proceedings Volume 11300, 113000L (2020) https://doi.org/10.1117/12.2544914

KEYWORDS: Metalorganic chemical vapor deposition, Photonics, Vertical cavity surface emitting lasers, Photonic devices, Laser applications, Light emitting diodes, Three dimensional sensing, LIDAR, LED displays, Optical communications

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Proceedings Article | 26 February 2016 Paper

Optical and crystal quality improvement in green emitting InxGa1-xN multi-quantum wells through optimization of MOCVD growth

Erkan Berkman, Soo Min Lee, Frank Ramos, Eric Tucker, Ronald Arif, Eric Armour, George Papasouliotis

Proceedings Volume 9748, 97480K (2016) https://doi.org/10.1117/12.2213309

KEYWORDS: Indium, Gallium nitride, Crystals, Metalorganic chemical vapor deposition, Indium gallium nitride, Stereolithography, Crystal optics, Atomic force microscopy, Light emitting diodes, Quantum wells

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Proceedings Article | 3 February 2009 Paper

Enhancement of light extraction efficiency of InGaN quantum well light-emitting diodes with polydimethylsiloxane concave microstructures

Yik-Khoon Ee, Pisist Kumnorkaew, Hua Tong, Ronald Arif, James Gilchrist, Nelson Tansu

Proceedings Volume 7231, 72310U (2009) https://doi.org/10.1117/12.808600

KEYWORDS: Light emitting diodes, Quantum wells, Indium gallium nitride, Silica, Gallium nitride, Monte Carlo methods, Ray tracing, Refractive index, Quantum efficiency, Glasses

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Proceedings Article | 3 February 2009 Paper

Growth of staggered InGaN quantum well light-emitting diodes emitting at 520-525 nm employing graded temperature profile

Hongping Zhao, Guangyu Liu, Xiaohang Li, Ronald Arif, G. Huang, Yik-Khoon Ee, Nelson Tansu

Proceedings Volume 7231, 72310E (2009) https://doi.org/10.1117/12.808542

KEYWORDS: Quantum wells, Indium gallium nitride, Light emitting diodes, Gallium nitride, Electroluminescence, Calibration, Metalorganic chemical vapor deposition, Structural design, Polarization, Sapphire

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Proceedings Article | 3 February 2009 Paper

Staggered InGaN quantum well diode lasers emitting at 500 nm

Hongping Zhao, Ronald Arif, Nelson Tansu

Proceedings Volume 7230, 72300G (2009) https://doi.org/10.1117/12.808561

KEYWORDS: Quantum wells, Indium gallium nitride, Semiconductor lasers, Gallium nitride, Polarization, Light emitting diodes, Electrons, Transition metals, Laser optics, Structural design

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Proceedings Article | 2 September 2008 Paper

Polarization engineering of III-nitride nanostructures for high-efficiency light emitting diodes

Nelson Tansu, Ronald Arif, Hongping Zhao, G. Huang, Yik-Khoon Ee

Proceedings Volume 7058, 705812 (2008) https://doi.org/10.1117/12.802482

KEYWORDS: Quantum wells, Indium gallium nitride, Light emitting diodes, Polarization, Gallium nitride, Luminescence, Transition metals, Nanostructures, Metalorganic chemical vapor deposition, Temperature metrology

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Proceedings Article | 25 February 2008 Paper

Radiative efficiency and spontaneous recombination rate of staggered InGaN quantum well LED at 420-510 nm

Ronald Arif, Hongping Zhao, Yik-Khoon Ee, Nelson Tansu

Proceedings Volume 6910, 691014 (2008) https://doi.org/10.1117/12.763362

KEYWORDS: Quantum wells, Indium gallium nitride, Light emitting diodes, Luminescence, Gallium nitride, Transition metals, Polarization, Temperature metrology, Metalorganic chemical vapor deposition, Quantum efficiency

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Proceedings Article | 22 February 2008 Paper

Optical gain and spontaneous emission of strain-compensated InGaN-AlGaN quantum wells including carrier screening effect

Hongping Zhao, Ronald Arif, Yik Khoon Ee, Nelson Tansu

Proceedings Volume 6889, 688903 (2008) https://doi.org/10.1117/12.763804

KEYWORDS: Quantum wells, Indium gallium nitride, Laser damage threshold, Semiconductor lasers, Gallium nitride, Polarization, Active optics, Laser optics, Semiconductors, Indium nitride

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Proceedings Article | 13 February 2008 Paper

Comparison of numerical modeling and experiments of InGaN quantum wells light-emitting diodes with SiO2 / polystyrene microlens arrays

Yik-Khoon Ee, Pisist Kumnorkaew, Hua Tong, Ronald Arif, James Gilchrist, Nelson Tansu

Proceedings Volume 6910, 69100M (2008) https://doi.org/10.1117/12.763973

KEYWORDS: Light emitting diodes, Silica, Microlens array, Quantum wells, Picosecond phenomena, Indium gallium nitride, Microlens, Monte Carlo methods, Gallium nitride, Ray tracing

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Proceedings Article | 22 March 2007 Paper

Design analysis of lattice-matched AlInGaN-GaN QW for optimized intersubband absorption in the Mid-IR regime

Ronald Arif, Ravi Tummidi, Yik Khoon Ee, Nelson Tansu

Proceedings Volume 6468, 646803 (2007) https://doi.org/10.1117/12.700767

KEYWORDS: Quantum wells, Gallium nitride, Aluminum, Indium gallium nitride, Mid-IR, Absorption, Gallium, Transition metals, Heterojunctions, Chemical elements

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Proceedings Article | 22 March 2007 Paper

Quantum 3D finite-difference-time-domain (Q-FDTD) analysis of InGaAs-GaAsP quantum-dot nanostructures

Yik-Khoon Ee, Yush Gupta, Ronald Arif, Nelson Tansu

Proceedings Volume 6468, 64681D (2007) https://doi.org/10.1117/12.700775

KEYWORDS: Indium gallium arsenide, Gallium arsenide, Nanostructures, 3D modeling, Quantum dots, Fourier transforms, Gallium, Finite-difference time-domain method, Computer simulations, Superposition

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Proceedings Article | 28 February 2006 Paper

Type-II 450-550 nm InGaN-GaNAs for quantum well active region lasers and light emitters on GaN

Ronald Arif, Yik-Khoon Ee, Nelson Tansu

Proceedings Volume 6115, 61150Y (2006) https://doi.org/10.1117/12.646174

KEYWORDS: Quantum wells, Indium gallium nitride, Gallium nitride, Gallium, Semiconductor lasers, Light emitting diodes, Polarization, Semiconductors, Light sources, Gallium arsenide

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Proceedings Article | 28 April 2005 Paper

Interdiffused InGaAsSbN quantum wells on GaAs for 1300- to 1550-nm lasers

Ronald Arif, Nelson Tansu

Proceedings Volume 5722, (2005) https://doi.org/10.1117/12.591023

KEYWORDS: Quantum wells, Antimony, Gallium arsenide, Indium gallium arsenide antimonide, Annealing, Gallium, Metalorganic chemical vapor deposition, Diffusion, Indium gallium arsenide, Semiconductor lasers

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Showing 5 of 14 publications

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