Design analysis of lattice-matched AlInGaN-GaN QW for optimized intersubband absorption in the Mid-IR regime

Ronald A. Arif; Ravi S. Tummidi; Yik Khoon Ee; Nelson Tansu

doi:10.1117/12.700767

22 March 2007 Design analysis of lattice-matched AlInGaN-GaN QW for optimized intersubband absorption in the Mid-IR regime

Ronald A. Arif, Ravi S. Tummidi, Yik Khoon Ee, Nelson Tansu

Author Affiliations +

Proceedings Volume 6468, Physics and Simulation of Optoelectronic Devices XV; 646803 (2007) https://doi.org/10.1117/12.700767
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

Design analysis of III-Nitride based intersubband quantum well absorption in the mid-IR regime (&lgr; ~ 3-5 &mgr;m) is presented. The use of lattice-matched AlInGaN materials is advantageous because of its extremely fast intersubband relaxation time &tgr;_rel ~ 150-fs. The ability to engineer lattice-matched AlInGaN layer with GaN should allow realization of multiple pairs of AlInGaN / GaN quantum well structures, which would otherwise be challenging due to the cracking issues that might develop in conventional multiple pairs AlGaN / GaN heterostructures. The large conduction band offset in III-Nitride heterostructures is also beneficial for minimizing dark current and thermal noise.

Citation Download Citation

Ronald A. Arif, Ravi S. Tummidi, Yik Khoon Ee, and Nelson Tansu "Design analysis of lattice-matched AlInGaN-GaN QW for optimized intersubband absorption in the Mid-IR regime", Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 646803 (22 March 2007); https://doi.org/10.1117/12.700767

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