A particle size measurement method based on micro-vision technology to improve the measuring precision is proposed in this paper. Firstly, the center point of the shape is determined by a single regular geometric boundary, and a corresponding spatial coordinate system is established. Secondly, by establishing a geometric shape size calibration model, the pixel size of basic parameters such as length, width, and cross-sectional area of the geometric shape is determined. Then, using autonomous motion calibration method, the pixel equivalent at the current image magnification is calibrated to reflect the correspondence between the pixel size of the image and the actual size, thereby expressing the actual size of the geometric shape. Finally, principal component analysis was used to compare, classify, and statistically analyze the measured geometric dimensions, eliminate duplicate values, reduce misidentification rates, and achieve accurate determination of geometric dimensions. In order to verify the validity of the method, repeat 5 times to measure the particle size of 100 nm, the experimental results show that the mean value ± standard deviation is consistent with the theoretical value. Therefore, this method reveals the possibility of high-precision measurement of particle size through computer micro-vision, and makes it be a much better option to be employed for further micro-nano structures analysis applications.
This paper develops a metrological atomic force microscopy system for nanoscale grid pitch characterization. Firstly, the principle of metrological atomic force microscopy and the roughness measurement method are introduced. Second, analyzed the evaluation principle of micro nano feature structures, mainly analyzed the evaluation algorithm of grid pitch, and developed an evaluation program using MATLAB. Then multiple methods are applied to measure grid pitch, and an evaluation program was developed using MATLAB to evaluate and calculate the measurement data, verifying the feasibility and reliability of each evaluation algorithm. Finally, the same grid pitch is compared and measured using metrological AFM and white light interferometer. The results show that the average measurement value is 200.14 nm, the standard deviation is 0.20 nm, and the difference is within the allowable error range. In addition, the metrological atomic force microscopy measurement method has the characteristics of high measurement accuracy, small measurement range, slow speed and no requirement for material, which provides technical support for process personnel how to choose the measurement scheme.
This paper develops a probe scanning AFM system for 12-inch wafer surface topography characterization. Firstly, a fast Gaussian filter convolution algorithm for 2D and 3D surface roughness is proposed, and the computation time is reduced by iterative approach. Second, the principle of AFM and the roughness measurement method are investigated. Finally, the same wafer is compared and measured using AFM and white light interferometer. The results show that the measurement error of the AFM is around 0.5% and the repeatability of the measurement is controlled in the order of picometer if the white light interferometer measurement is used as the reference value. In addition, the atomic force microscopy measurement method has the characteristics of high measurement accuracy, small measurement range, slow speed and no requirement for material, which provides technical support for process personnel how to choose the measurement scheme.
KEYWORDS: Film thickness, Thin films, Scanning electron microscopy, Ellipsometry, Electron microscopes, Nanofilms, Reflection, Systems modeling, Dispersion, Mathematical modeling
In this paper, ellipsometer combined with scanning electron microscope for solving the complex refractive index of nano film is proposed. Firstly, the interface of the nano film was measured using scanning electron microscope to obtain its thickness. Next, measure the parameters of the ellipsometer to establish the corresponding mathematical model and obtain the characteristic parameters of the thin film. Then, optimize the ellipsoidal mathematical model by comparing the film thickness obtained by scanning electron microscopy with that obtained by ellipsometry. Ultimately obtaining accurate film thickness and optical constants. The results show that the relative error of the calculation result of the optical properties is less than 1.0 nm and the measured values of optical constants are also consistent with the theoretical values. At the same time, the results derived from our method are in better agreement with the standard value, which shows that the measurement results are true and effective. Therefore, this method reveals the possibility of high-precision measurement of nano film through ellipsometer and scanning electron microscope, and makes it be a much better option to be employed for further micro-nano structures analysis applications.
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