Mr. Kousuke Negishi Profile

Kousuke Negishi

at Tokyo Univ of Science

SPIE Involvement:

Author

Publications (5)

SPIE Journal Paper | 17 June 2022 Open Access

X-ray radiation damage effects on double-SOI pixel detectors for the future astronomical satellite FORCE

Masatoshi Kitajima, Kouichi Hagino, Takayoshi Kohmura, Mitsuki Hayashida, Kenji Oono, Kousuke Negishi, Keigo Yarita, Toshiki Doi, Shun Tsunomachi, Takeshi Go Tsuru, Hiroyuki Uchida, Kazuho Kayama, Ryota Kodama, Takaaki Tanaka, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Masataka Yukumoto, Kira Mieda, Shuto Yonemura, Tatsunori Ishida, Yasuo Arai, Ikuo Kurachi

JATIS, Vol. 8, Issue 02, 026007, (June 2022) https://doi.org/10.1117/12.10.1117/1.JATIS.8.2.026007

KEYWORDS: X-rays, Sensors, Radiation effects, X-ray detectors, Silicon, Electrons, Interfaces, Satellites, Iron, X-ray astronomy

Read Abstract +

DOWNLOAD PAPER

SPIE Journal Paper | 9 August 2021

Proton radiation hardness of x-ray SOI pixel sensors with pinned depleted diode structure

Mitsuki Hayashida, Kouichi Hagino, Takayoshi Kohmura, Masatoshi Kitajima, Keigo Yarita, Kenji Oono, Kousuke Negishi, Takeshi Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Kazuho Kayama, Ryota Kodama, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Takahiro Hida, Masataka Yukumoto, Yasuo Arai, Ikuo Kurachi, Hisashi Kitamura, Shoji Kawahito, Keita Yasutomi

JATIS, Vol. 7, Issue 03, 036001, (August 2021) https://doi.org/10.1117/12.10.1117/1.JATIS.7.3.036001

KEYWORDS: X-rays, Sensors, Diodes, Silicon, CMOS sensors, Capacitance, Satellites, CMOS technology, X-ray detectors, X-ray technology

Read Abstract +

X-ray silicon-on-insulator (SOI) pixel sensors, “XRPIX,” are being developed for the next-generation x-ray astronomical satellite, “FORCE.” The XRPIX is fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si complementary metal oxide semiconductor (CMOS) circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with x-ray signals at the timing of x-ray detection. This function thus realizes high throughput and high time resolution, which enables to employ anti-coincidence technique for background rejection. A new series of XRPIX named XRPIX6E developed with a pinned depleted diode (PDD) structure improves spectral performance by suppressing the interference between the sensor and circuit layers. When semiconductor x-ray sensors are used in space, their spectral performance is generally degraded owing to the radiation damage caused by high-energy protons. Therefore, before using an XRPIX in space, it is necessary to evaluate the extent of degradation of its spectral performance by radiation damage. Thus, we performed a proton irradiation experiment for XRPIX6E for the first time at Heavy Ion Medical Accelerator in Chiba in the National Institute of Radiological Sciences. We irradiated XRPIX6E with high-energy protons with a total dose of up to 40 krad, equivalent to 400 years of irradiation in orbit. The 40-krad irradiation degraded the energy resolution of XRPIX6E by 25 ± 3 % , yielding an energy resolution of 260.1 ± 5.6 eV at the full-width half maximum for 5.9 keV X-rays. However, the value satisfies the requirement for FORCE, 300 eV at 6 keV, even after the irradiation. It was also found that the PDD XRPIX has enhanced radiation hardness compared to previous XRPIX devices. In addition, we investigated the degradation of the energy resolution; it was shown that the degradation would be due to increasing energy-independent components, e.g., readout noise.

Proceedings Article | 28 December 2020 Presentation + Paper

Proton radiation hardness of x-ray SOI pixel detectors with pinned depleted diode structure

Mitsuki Hayashida, Takayoshi Kohmura, Kouichi Hagino, Kenji Oono, Kousuke Negishi, Keigo Yarita, Masatoshi Kitajima, Takeshi G. Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Kazuho Kayama, Ryota Kodama, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Takahiro Hida, Masataka Yukumoto, Yasuo Arai, Ikuo Kurachi, Tsuyoshi Hamano, Hisashi Kitamura, Shoji Kawahito, Keita Yasutomi

Proceedings Volume 11454, 114540P (2020) https://doi.org/10.1117/12.2562392

KEYWORDS: Sensors, X-rays, X-ray detectors, Diodes, Satellites, CMOS sensors, Detector development, X-ray astronomy, Astronomy, Silicon

Read Abstract +

Proceedings Article | 1 August 2018 Presentation + Paper

Kyoto's event-driven x-ray astronomy SOI pixel sensor for the FORCE mission

Takeshi Tsuru, Hideki Hayashi, Katsuhiro Tachibana, Soudai Harada, Hiroyuki Uchida, Takaaki Tanaka, Yasuo Arai, Ikuo Kurachi, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Nobuaki Takebayashi, Shoma Yokoyama, Kohei Fukuda, Takayoshi Kohmura, Kouichi Hagino, Kenji Ohno, Kohsuke Negishi, Keigo Yarita, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Sumeet Shrestha, Shunta Nakanishi, Hiroki Kamehama, Hideaki Matsumura

Proceedings Volume 10709, 107090H (2018) https://doi.org/10.1117/12.2312098

KEYWORDS: Sensors, X-rays, Silicon, X-ray astronomy, CMOS sensors, X-ray imaging, X-ray detectors, Imaging devices

Read Abstract +

Proceedings Article | 10 July 2018 Presentation

Proton radiation tolerance of x-ray SOI pixel sensors for space use (Conference Presentation)

Takayoshi Kohmura, Kosuke Hagino, Keigo Yarita, Kenji Oono, Kosuke Negishi, Koki Tamasawa, Takeshi Go Tsuru, Takaaki Tanaka, Hideki Matsumura, Hideki Hayashi, Katsuhiro Tachibana, Sodai Harada, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Nobuaki Takebayashi, Shoma Yokoyama, Kohei Fukuda, Yasuo Arai, Ikuo Kurachi

Proceedings Volume 10699, 106992G (2018) https://doi.org/10.1117/12.2313532

KEYWORDS: X-rays, Sensors, Tolerancing, Space sensors, CMOS technology, X-ray astronomy, X-ray technology, Astronomy, Satellites, Image resolution

Read Abstract +

We have developed SOIPIXs based on the CMOS SOI technology for the future X-ray astronomical satellite. SOIPIXs has the event trigger output function implemented in each pixel offers microsecond time resolution and its event trigger function enables to separate celestial X-rays and non-X-ray background by combining the anticoincidence system and to reduce the non-X-ray background that dominates the high X-ray energy band above 5-10 keV. A fully depleted SOIPIXs with a 300-500 um thick depletion layer and back illumination offers wide band coverage of 0.3-40 keV. In order to use XRPIXs in space environment, to investigate the radiation hardness of XRPIXs is important because semiconductor detectors such as XRPIXs and CCDs are damaged by interacting with many cosmic rays which are composed primarily energy protons in orbit. The damage causes the increase of dark current and the degradation of the performance such as the energy resolution of XRPIXs. To evaluate the radiation hardness of XRPIXs, we have carried out the radiation damage test at the heavy ion medical accelerator (HIMAC) in Japan. For this experiment, we used the XRPIX2b-FZ (Takeda et al, 2015) which was the front illuminated XRPIX with 300um thick depletion layer. XRPIX2b-FZ has 144 x 144 pixels and the pixel size is 30um x 30 um. We installed XRPIX2b-FZ in the vacuum chamber and cooled it around -80 C degree. The proton beam flux was much strong for our purpose of this experiment, we set the 3 um thick Au film as a scatterers in the cubic flange in front of vacuum chamber in order to reduce the beam flux. We introduced the scattered proton beam to the two direction of the downstream of the beam line, and one was irradiated to XRPIX2b-FZ in the vacuum chamber and the other was irradiated to the faraday cup connected to the cubic flange to monitor the scattered beam flux. We also obtained the total doze of proton beam using the faraday cup. We irradiated the proton beam to XRPIX2b-FZ until the total irradiation dose reached 10 krad while increasing the irradiation dose and evaluated the performance such as leak current, gain and energy resolution using X-ray from 109 Cd after the proton irradiation of 1 rad, 400 rad, 1 k rad, 4 k rad, and 10 krad. From above experimental results, we found that the gain and the energy resolution was degraded by 0.2 % and 10 % respectively with 400 rad whose equivalent time in orbit was 3.5 years, and the gain and energy resolution became worse by 0.8 % and 32 % respectively after irradiation of 4k rad. We investigated the reason of the degradation of the energy resolution and found the degradation was mainly caused by the increasing the read out noise. We also found the number of bad pixels clearly increased by about 10 times after the irradiation of 10 krad.

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years