As the design rule continues to shrink towards 3x nm and below, lithographers are searching for new and
advanced methods of mask lithography such as immersion, double patterning and extreme ultraviolet
lithography (EUVL). EUV lithography is one of the leading candidates for the next generation lithography
technologies after 193 nm immersion and many mask makers and equipment makers have focused on
stabilizing the process. With EUV lithography just around the corner, it is crucial for advanced mask makers
to develop and stabilize EUV mask processes. As a result, an inspection tool is required to monitor and
provide quick feedback to each process step.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.