6-mirror-system EUV projection optics design with NA of 0.4 plus was improved and the residual wavefront error was
much reduced. Apodization is an issue for such high-NA EUV projection optics. Broad-band multilayer mirror can solve
the problem. Broad-band multilayer mirrors were developed. Measured reflectivity performance of these multilayers was
in good agreement with the designed performance. We have decided the measures to control contaminations of optics in
HVM EUV exposure tools.
Contamination control of optics is one of critical issues for extreme ultraviolet (EUV) lithography. EUV irradiation
under a carbon-containing environment causes carbon contaminations on mirror surfaces. We investigated irradiance
dependency of contaminating rates of some contaminants using a synchrotron radiation of Saga Light Source (SAGALS).
Decane's contaminating rate increased proportionally with irradiance, while perfluorohexane's contaminating rate
was almost constant at a higher irradiance than 10 mW/cm2. We then introduced a simple model: contamination reaction
occurs when photons are supplied onto contaminants which are supplied and adsorbed on mirrors, and the lesser of their
supplying rates determines the contaminating rate. At a lower irradiance, since contaminants are sufficiently supplied,
the photon supply determines the contaminating rate. At a higher irradiance, since photons are sufficiently supplied, the
contaminant supply determines the contaminating rate, which is independent of irradiance and depends on contaminant's
partial pressure. We also investigated irradiance dependency of cleaning rates of carbon contamination by oxidative gas
and incorporated it into the model. We applied the contamination/cleaning model to an existing exposure tool, EUV1.
The transmittance degradation history agreed well with the calculation.
Exposure performance of projection optics with different flare level was compared in EUV1. Ultimate resolution of
EUV1 was evaluated using alternate phase shift mask and resist modulation was obtained down to 16nmL/S. Modeling
of carbon contamination growth and cleaning was established based on exposure experiments using a synchrotron
source. Based on the modeling, in-situ cleaning condition using oxygen in EUV1 was optimized. As a result, carbon
contamination growth in EUV1 was completely suppressed. Optical design of projection optics with numerical aperture
of over 0.4 was investigated. 6-mirror system with central obscuration seems to be promising. EUV actinic wavefront
metrology scheme without using a synchrotron source, which can be used as on-body wavefront metrology, was
developed and its practicality was demonstrated.
Flare is a critical impact on extreme ultraviolet (EUV) lithography. Flare can be calculated by integrating flare point
spread function (PSF) within the bright field. Flare PSF is defined as (1-TIS)δ(r)+PSFSC(r); where TIS, total integrated
scatter, is traditonally defined as integration of PSFSC to infinity, and r is distance on wafer. PSFSC is traditionally derived from power spectral density (PSD) of surface roughness of mirrors of optics. However, the amount of scatter
light depends on mirror PSDs, while a portion of scatter light having a larger scatter angle cannot reach wafer; this
means there is energy loss in optics. Hence TIS should be defined as total amount of as-scattered light, while PSFSC
should be defined as amount of light reaching wafer for use to calculate image intensity. We then introduced two PSFs:
PSFSC and PSFSC0. PSFSC0 is directly derived from mirror PSDs and used to calculate TIS. PSFSC is derived based on
amount of light reaching wafer taking obscuration inside optics into account. We also applied other considerations:
release of approximation in domain conversion from PSD to PSF, and scatter extinct effect by multilayer. Using these
considerations we can calculate flare behaviors which agree well with experiments.
Dedicate beam line for R&D on contamination of EUV exposure tools (BL18) was constructed at Saga Light Source
(SAGA-LS) and its operation has been started. BL18 has an advantage of long time exposure, which gives accurate data
compared with high-EUV-intensity and short-time experiments using an undulator beam line at New SUBARU synchrotron facility. Carbon contamination growth under low irradiance EUV radiation with fluorocarbon gas injection
was examined using Mo/Si multilayer mirror samples. In the EUV intensity region from 11 W/cm2 to 0.01 W/cm2,
degradation rate of reflectivity did not depend on the EUV intensity. The degradation rate was proportional to the EUV
intensity in the range of less than 0.01 W/cm2. Carbon contamination due to resist outgas during EUV exposure was also investigated.
Nikon has been developing the full field exposure tool called EUV1 for process development of 32nm hp node and beyond. The unique feature of EUV1 is the capability of variable illumination coherence and off-axis illumination. EUV1 was installed in Selete and used for EUV lithography process development. Nikon also has conducted continuous collaborative works with customers using EUV1. Since the last SPIE Symposium in 2009, many exposure results with EUV1 tools were obtained. They showed excellent resolution capability beyond 24nm L/S with off-axis illumination and stable overlay capability of 10nm (Mean + 3 sigma). Process development exposures of test chip patterns are ongoing. With regard to HVM tool development, imaging capability with high NA projection optics and throughput capability are reviewed.
The full-field extreme ultraviolet (EUV) exposure tool named EUV1 is integrated and exposure experiments are started with a numerical aperture of the projection optics of 0.25, and conventional partial coherent illumination with a coherence factor of 0.8. 32-nm elbow patterns are resolved in a full arc field in static exposure. In a central area, 25-nm line-and-space patterns are resolved. In scanning exposure, 32-nm line-and-space patterns are successfully exposed on a full wafer. Wavefront error of the projection optics is improved to 0.4-nm rms. Flare impact on imaging is clarified, dependent on flare evaluation using the Kirk test. Resolution enhancement technology (RET) fly-eye mirrors and reflection-type spectral purity filters (SPFs) are investigated to increase throughput. High-NA projection optics design is also reviewed.
Full-field EUV exposure tool named EUV1 integrated and exposure experiments were started with the numerical aperture of the projection optics of 0.25 and conventional partial coherent illumination with the coherence factor of 0.8. 32nm elbow patterns were resolved in full arc field in static exposure. In the central area 25nm line-and-space patterns were resolved. In scanning exposure, 32nm line-and-space patterns were successfully exposed on a full wafer. Wavefront error of the projection optics was improved to 0.4nmRMS. Flare impact on imaging was clarified depend on the flare evaluation using Kirk test. RET fly's eye mirrors and reflection-type SPF are investigated to increase throughput. High-NA projection optics design is also reviewed.
Si/Mo multi-layer mirrors are oxidized by a photochemical reaction with water gas and extreme ultraviolet (EUV) light. They do not have enough durability in EUV lithography tools. 14 types of capped mirror samples (SiO2, TiO2, V2O5, Cr2O3, Mn2O3, Y2O3, Nb2O5, RuO2, Rh2O3, PdO, SnO2, La2O3, CeO2, WO3-capped) have been investigated on the anti-oxidation property under the 150-1600J/mm2 EUV irradiation at SR facilities. We have irradiated samples under the 1x10-4Pa and 9x10-4Pa water vapors. TiO2, V2O5, Cr2O3, Nb2O5, CeO2-capped mirror samples suppress reflectance drops and Si layers oxidation. These metal ions have similar radii. We have measured local structure of the RuO2 layer with lower durability. The RuO2 layer is amorphous. This Amorphous RuO2 layer loses the long range order of bonds and the short range order of the first shell. The Ru-O bonds remains with losing coordination number. To accelerate durability tests for a high volume machine, we have constructed a new dedicated beam line at the SAGA Light Source.
The full-field EUV exposure tool dubbed EUV1 was fully integrated and we started static and scanning exposures with the projection optics NA (Numerical Aperture) of 0.25 and conventional partial illumination with coherence factor of 0.8. 32nm elbow patterns were resolved in full arc field in static exposure. In the central area 25nm L/S patterns were resolved. In the scanning exposure, 32nm L/S patterns were successfully exposed on a full wafer. Wavefront error of the projection optics was improved to 0.4nmRMS. Flare impact on imaging was clarified under the flare evaluation using Kirk test. Metal oxide capping layer and oxygen injection method to suppress carbon deposition were developed for the contamination control. Imaging capability with high NA projection optics is also reviewed.
Full-field EUV exposure tool named EUV1 integrated and exposure experiments were started with the numerical aperture of the projection optics of 0.25 and conventional partial illumination with coherence factor of 0.8. 32nm elbow patterns were resolved in full arc field in static exposure. In the central area 25nm line-and-space patterns were resolved. In scanning exposure, 32nm line-and-space patterns were successfully exposed on a full wafer. Wavefront error of the projection optics was improved to 0.4nmRMS. Flare impact on imaging was clarified depend on the flare evaluation using Kirk test. Metal oxide capping layer and oxygen injection method were developed for the contamination control in EUV exposure tools. High-NA projection optics design is also reviewed.
Extreme Ultra Violet Lithography (EUVL) has been widely regarded as the lithography technology to succeed
optical lithography. It is now considered as one of the most promising technologies below hp45nm node [1], following
ArF immersion lithography considering trend of achievable process K1 factors. In this paper we would like to present
our significant progress on the development of EUV exposure tool. There are several key important areas which should
be developed to realize EUVL to be feasible, such as reflective mask, resist, and tool itself. The reflective mask features
such characteristics as pellicle-less, ultra-smooth blank flatness and defect free. The resist should be of high sensitivity
and small line edge roughness (LER) as well as fine resolution. EUV exposure tool itself consists of major modules
such as EUV light source, projection optics, vacuum body, vacuum stages, and so on. Nikon has developed new
polishing technologies such as ion-beam figuring and elastic emission machining, and new ultra high-precision
interferometers for aspheric surface metrology. Our multi-layer coating technology has been also improved. High
reflective Mo/Si multi layer coating has been successfully achieved and irradiation tests using synchrotron radiation
have been conducted. Successful achievement of those developments enables us to produce full-field projection optics
for EUVL process development tool called EUV1. The proto-type development of full-field projection optics has been
successfully completed and its technical achievement has reflected into production optics. Preparation of complete set
of production and metrology tools necessary for projection optics production was completed and all tools are now in
full operation.
Nikon has already developed dual pod reticle carrier for EUV1 tool. In parallel Nikon has been developing the
same concept carrier for HVM in cooperation with Canon and Entegris.
Regarding to EUV1 tool development, all modules of EUV1 such as full-field projection optics module,
illumination optics module, vacuum body module, vacuum compatible reticle/wafer stage modules, reticle/wafer loader
modules, EUV light source module have been completed. Nikon has already started EUV1 module installation process
and the module level function and basic performance have been being checked. Nikon will complete module integration
to achieve the first exposure result. Some development results will be shown which lead to confidence for realization of
EUVL. Nikon also would like to announce that development of 1st generation production EUVL tool named EUV2 has
been studied.
The wavefront measurements have been performed with the EUV Wavefront Metrology System (EWMS) for the first
time using a prototype projection optic as a test optic. The wavefronts of the test optic was measured at the five positions
in the exposure field with the Digital Talbot Interferometer (DTI). The RMS magnitude of the wavefront errors ranged
from 0.71 λ (9.58 nm) to 1.67 λ (22.75 nm). The results obtained with the DTI were compared to those with the Cross
Grating Lateral Shearing Interferometer (CGLSI). As a result of a repeatability assessment, it was found that the EWMS
can stably measure the wavefronts of the test optic. Additionally, unwrapping of the phase map was found to be related
to the precision of the measurement.
It is very important to mitigate oxidation of multilayer mirrors (MLMs) and carbon deposition onto MLMs to extend the
lifetime of EUV exposure tool. We focused on carbon deposition on Si-capped multilayer mirror. We made experiments
of EUV irradiation to the multilayer mirrors using an EUV irradiation apparatus connected to a beam line (SBL -2) of
synchrotron radiation facility Super-ALIS in the NTT Atsugi research and development center. Thickness of deposited
carbon was obtained by using XPS. We investigated carbon deposition rates at various partial pressures of various
organic species. Phenomenological analysis was applied to the obtained carbon deposition rate. Carbon deposition rate
was proportional to the pressure at the proportional EUV intensity. Applying this normalization of the deposition rate
and the EUV intensity, carbon deposition rate seems to behave according to each universal function for each
hydrocarbon species.
Final adjustment of EUV1 projection optics was completed and its performance was evaluated. Wavefront error of
0.6nmRMS in average through the exposure field was achieved. The maximum and minimum wavefront errors in the
whole field were 0.8nmRMS and 0.3nmRMS, respectively. Flare of the projection optics was estimated from the
measured power spectrum density (PSD) of each aspheric mirror of the projection optics. The flare value for Kirk
pattern with the radius of 1μm was estimated to be about 10%. Completed projection optics was installed into the main
body of EUV1. Optimization of polishing process was further pursued. Consequently, LSFR of 38pmRMS, MSFR of
80pmRMS and HSFR of 68pmRMS were achieved. Assemble of the illumination-optics unit for EUV1 was completed
and its performance was evaluated using an illumination-optics test stand. Irradiation uniformity on the mask plane,
pupil fill and so on were measured with the test stand using a visible light and EUV radiation. Completed illumination-optics
unit was installed into the main body of EUV1. Reflection-type spectral purity filter (SPF) and high-NA
projection-optics design were investigated as new R&D items for the future optics of EUV exposure tools.
Organic gases cause carbon depositions on the multi-layer mirrors by Extreme Ultra Violet (EUV) light irradiations in
EUV lithography tool. The dependences on organic gas species, organic gas pressure and EUV light intensity in the
carbon deposition were researched in order to understand this reaction. EUV light was irradiated on a (Si/Mo) multilayer
mirror sample injecting organic gas like buthane, buthanol, methyl propionate, hexane, perfluoro octane, decane,
decanol, methyl nonanoate, diethyl benzene, dimethyl phthalate and hexadecane. X-ray photoelectron spectroscopy
measurements revealed that organic gases with heavier molecule weight or higher boiling temperature caused faster
carbon deposition rates. Carbon deposition rates increased linearly with organic gas pressures. Dependence on EUV light
intensity was estimated from comparisons between an EUV light profile and carbon distributions on irradiated samples.
Carbon deposition rates increased rapidly, but became saturated at higher EUV light intensities. Three chemical
reactions, an adsorption, a desorption and a carbon deposition by EUV light irradiation, were taken into account to
explain the behavior of the carbon deposition. Electron irradiation on a mirror sample revealed that photoelectrons
emitting from the mirror surface played an important role in carbon deposition.
Nikon is now conducting a development of the full-field EUV exposure tools for EUVL process development named
EUV1, which will be delivered in 2007. Polishing and coating of six different kinds of mirrors for the projection optics
of EUV1 were finished and adjustment of the projection optics has been started. Sophisticated polishing process for
aspheric mirrors, which can reduce LSFR, MSFR and HSFR down to less than 0.1nmRMS simultaneously, were
developed. Process conditions of Mo/Si multilayer coatings have been optimized to obtain high reflectivity, low internal
stress and graded coating simultaneously. Wavefront error of the projection optics under adjustment process is now
3nmRMS. We will try to achieve a wavefront error of less than 1nmRMS by further precise adjustment. Fabrication
process of fly's eye mirrors, which is a key device of illumination optics of EUV1, was developed. All the mirrors of the
illumination optics for EUV1 were finished and evaluation of its performance using an illumination-optics test stand has
been started. Development and fabrication of both the projection optics and the illumination optics for EUV1 are
satisfactorily in progress.
Extreme Ultra Violet Lithography (EUVL) has been widely regarded as the lithography technology to succeed optical lithography. It is now considered as one of the most promising technologies below hp45nm node [1], following ArF immersion lithography considering trend of achievable process K1 factors shown in Fig. 1. In this paper we would like to present significant progress on the development of EUV exposure tool. There are several key important areas which should be developed to realize EUVL to be feasible such as reflective mask, resist, and tool itself. The reflective mask features such characteristics as pellicle-less, ultra-smooth blank flatness and defect free. The resist should be of high sensitivity and small line edge roughness (LER) as well as fine resolution. EUV exposure tool itself consists of major modules such as EUV light source, projection optics, vacuum body, vacuum stages, and so on. As far as EUVL optics development is concerned, through the development of high-NA small-field EUV exposure system (HiNA) in conjunction with EUVA (Extreme Ultraviolet Lithography System Development Association) projects, we have developed new polishing technologies such as ion-beam figuring and elastic emission machining, and new ultra high-precision interferometers for aspheric surface metrology. Wave front sensor system has been also developed partly in EUVA project. A new wave front sensor system which can be used for evaluating the projection optics with EUV light has already been installed in New SUBARU synchrotron facility in University of Hyogo. Our multi-layer coating technology has been also improved. High reflective Mo/Si multi layer coating has been successfully achieved and irradiation tests using synchrotron radiation have been conducted [8]. Successful achievement of those developments enables us to produce full-field projection optics for EUVL process development tool called EUV1. Proto-type development of full-field projection optics has been successfully completed and evaluated to be of enough performance. Preparation of complete set of production and metrology tools necessary for projection optics production was completed and all tools are now in full operation.
Nikon has studied reticle protection method and developed Dual Pod Concept in cooperation with Canon. Nikon also has developed its own reticle cover to be implemented in EUV1 tool.
Nikon has completed almost all module fabrication such as full-field projection optics module, illumination optics module, vacuum body module, vacuum compatible reticle/wafer stage modules, reticle/wafer loader modules, and EUV light source module. Nikon has already got into module integration production process to meet EUV1 development schedule. Nikon announced to start EUV1 tool installation in 1st half of 2007 and has been proceeding it on schedule. Nikon also would like to announce that development of 1st generation production EUVL tool dubbed EUV2 is now considered and that system concept design is under way.
New experimental equipment was installed in the NewSUBARU synchrotron radiation facility in order to investigate the contamination inhibition mechanism of projection optics for extreme ultraviolet lithography (EUVL). The equipment consisted of two all-metal sealed chambers, and the atmosphere was accurately controlled a over the wider degree of vacuum compared to the previous experimental equipment. The light source was the long undulator (LU) which can irradiate a sample with high EUV flux density of about 200 mW/mm2. Reflectivity and its distribution of an irradiated sample can be measured in situ. NEXAFS spectrum of the sample can be also obtained in situ utilizing the beam-line monochromator, which is a useful method for surface analysis. Using this equipment, EUV irradiation, reflectance measurement, and surface analysis were carried out for Si-capped Mo/Si multilayer (ML) samples. A wavelength dependence of photoemission current was changed at the irradiated area, which suggested that the phase change of standing wave at the ML surface occurred from contamination.
The changes of chemical state and multilayer structure of Ru capped multilayer mirrors (MLMs) by irradiation of extreme ultraviolet (EUV) from synchrotron radiation (SR) were investigated using Auger electron spectroscopy (AES). It was found that irradiation induced Si diffusion and Si oxidation. Calculation of temperature distribution showed that Si diffusion was less relevant to temperature during irradiation.
Precise measurements of the wavefront aberrations of projection optics with 0.1 nm RMS accuracy are indispensable to
develop the extreme ultraviolet (EUV) lithography. In order to study measurement methods, we built the Experimental
EUV Interferometer (EEI) that has built-in Schwarzschild-type optics as test optics and was supplied with EUV
radiation of 13.5 nm in wavelength from a synchrotron radiation facility as a source light. The EEI can evaluate several
methods of EUV interferometory replacing optical parts easily. Those methods are dividable into two categories,
namely point diffraction interferometer (PDI) and lateral shearing interferometer (LSI) and those were experimentally
compared. Finally, 0.045nm RMS of reproducibility was achieved with PDI method and the residual systematic error
after removing specified errors was reduced to 0.064nm RMS excluding axial symmetrical aberrations. In addition, one
of LSI-type methods also proved to have almost enough accuracy for the assembly of the projection optics.
Reflectance changes during the EUV irradiation were in-situ measured using two different experimental systems. One system consisted of slight high hydrocarbon (HC) content chamber and the other consisted of low HC content chamber. Distribution maps of the reflectance changes were quite different from each other. Especially, the reflectance change at the center of the EUV irradiation area was suppressed when the high HC content system was used. The surface analysis using XPS was performed. According to the analysis, it was found that two reflectance changes were arising from different reasons. It would seem that the origin of the different reasons were difference of the residual gas atmosphere.
Extreme Ultra Violet Lithography (EUVL) is considered as the most promising technology below hp45nm node, following ArF immersion lithography. In this paper we would like to present significant progress on the development of EUV exposure tool with recent encouraging data of mirror polishing accuracy and evaluation results of Nikon reticle protection concept. EUV exposure tool consists of major important modules such as EUV light source, projection optics, and so on. As far as EUVL optics development is concerned, through the development of high-NA small-field EUV exposure system (HiNA), our mirror polishing and metrology technologies of aspheric mirror surface and multi-layer coating technology have been remarkably improved and enable us to fabricate high-precision aspheric mirrors which meet the specification for EUV pre-production tools called EUV1. In the EUVA (Extreme Ultraviolet Lithography System Development Association) project, we have developed new polishing technologies such as ion-beam figuring and new high-precision interferometers for aspheric surface metrology. Wave front sensor systems have been also developed partly in EUVA project. Installation of a new wave front sensor system which can be used for evaluating the full-field projection optics with EUV light has already been started in New SUBARU synchrotron facility in University of Hyogo. EUV1 tool system design and its detailed design of all modules such as full-field projection optics module, illumination optics module, vacuum body module, vacuum compatible reticle/wafer stage modules, reticle/wafer loader modules have been completed. The results of development and prototyping of major modules such as vacuum stage modules and vacuum body module have been reflected in the actual tool design. Nikon has been also heavily involved in the infrastructure development such as mask handling development. In order to meet industry demands, Nikon has been already getting into EUV1 module fabrication phase. Nikon announces that EUV1 tool is scheduled to be delivered in 1st half of 2007.
Comparisons between several at-wavelength metrological methods are reported. The comparisons are performed by measuring one test optic with several kinds of measurement methods from the viewpoints of accuracy, precision and practicality. According to our investigation, we found that the PDI, the LDI, and the CGLSI are the most suitable methods for evaluating optics for EUV lithography.
A Calibration technology for double-grating lateral shearing interferometer1 (DLSI) and lateral shearing interferometer (LSI) is proposed in this paper. In this method, two measurements are used for calibration. One is the measurement by using the first- and zero-order diffraction beams of grating in the interferometer; the other one is the measurement by using the minus-first-order and zero-order diffraction beams. The phase distributions were calculated out from the two measurements. After shifted one phase distribution to superpose the other one, in the sum of the two phase distributions, the test wavefront is canceled. The system error caused by the grating diffraction and grating tilt can be calculated out from the sum of the superposed phase distributions. For calculating out the system errors, the sum of the two phase distributions is fitted to Zernike-Polynomials. From the coefficients of the Zernike-polynomials, the system error is calculated. This method is carried out to calibrate the system error of DLSI. We performed an experiment to verify the available of our calibration method.
We present the experimental results of EUVA Absolute Point Diffraction Interferometer (ABSPDI) and Lateral Shearing Interferometer (LSI) for at-wavelength characterization of the projection lens for use in extreme-ultraviolet lithography (EUVL). The attained repeatability of either type of the interferometers is within 0.04nmRMS. The experimental results have shown good consistency between the LSI and ABSPDI. The reasons for the residual differences have been analyzed and we believed it is mainly due to the CCD tilt effect in the experimental system. After the CCD tilt effect was removed, a better consistency below 0.33nm RMS has been achieved.
We are developing an at-wavelength interferometer for EUV lithography systems. The goal is the measurement of the wavefront aberration for a six-aspherical mirror projection optic. Among the six methods that EEI can measure, we selected CGLSI and PDI for comparison. PDI is a method well-known for its high accuracy, while CGLSI is a simple measurement method. Our comparison of PDI and CGLSI methods, verified the precision of the CGLSI method. The results show a difference between the methods of 0.33nm RMS for terms Z5-36. CGLSI measurement wavefronts agree well with PDI for terms Z5-36, and it is thought of as a promising method. Using FFT analysis, we estimated and then removed the impact of flare on the wavefront. As a result of having removed the influence of flare, the difference between CGLSI and PDI improved to only 0.26nm RMS in Zernike 5-36 terms. We executed PDI wavefront retrieval with FFT, which has not been used till now. By confirming that the difference between methods using FFT and Phase shift is 0.035nm RMS for terms Z5-36, we have proven that PDI wavefront analysis with FFT is possible.
Three sets of projection optics (Sets 1, 2, and 3) were fabricated to the mark of a wave front error (WFE) of less than 1 nm. The RMS WFE is 7.5 nm for Set 1, 1.9 nm for Set 2, and at most 0.9 nm for Set 3. In addition, the RMS mid-spatial frequency roughness (MSFR), which affects flare, is 0.34 nm for Set 2 and 0.17 nm for Set 3. This paper discusses the current lithographic performance of HINA, especially the evaluation of flare and the replication of fine-pitch patterns. Several EUV masks were fabricated to evaluate the effects of flare and to replicate fine-pitch patterns. In the case of Set 2 optics, 90 nm lines and spaces were barely delineated using a bright-field mask due to the RMS MSFR of 0.34 nm, and replication of 70 nm lines and spaces were achieved using a dark-field mask. Since the RMS WFE and the RMS MSFR for Set 3 optics are half as much as that for Set 2 optics, the lithographic performance of HINA is markedly improved. 50 nm lines and spaces of non-chemically-amplified resist were delineated with the illumination condition of a partial coherence, σ, of 0.8 and 45 nm lines and spaces were delineated with the annular illumination condition of outer σ of 0.8 and inner σ of 0.5. In addition ultimate resolution of 30 nm lines and spaces of chemically-amplified resist was performed under the coherent illumination condition of σ of 0.0.
We developed a high-numerical-aperture EUV exposure tool (HiNA). HiNA is equipped with an illumination system, projection optics, a mask stage and a wafer stage in the vacuum chamber. The projection optics consist of two aspherical mirrors (M1 and M2). The numerical aperture of the optics is 0.3. Thus far, we fabricated two sets of projection optics (set-1 and set-2). The wavefront errors of set-1 and set-2 were 7.5nm rms and 1.9nm rms, respectively. We developed the third set of projection optics (set-3), the target wavefront error of which was less than 1nm rms. In set-3, we also attempted to reduce flare. We completed the mirror polishing, coating and mirror adjustment of set-3. Using a new polishing method, we successfully reduced low-spatial-frequency roughness (LSFR), mid-spatial-frequency roughness (MSFR) and high-spatial-frequency roughness (HSFR) simultaneously. The predicted wavefront error calculated from the LSFR number was 0.69nm rms. MSFR, which strongly affects the flare of the optics, was significantly reduced to less than 0.2nm rms. The estimated flare was 7%, which is significantly reduced to one-fourth that of set-2. The wavefront error of set-3 was measured with the visible-light point diffraction interferometer (PDI) after coating and assembly. The wavefront error measured after adjustment and cramping of the adjustment system was 0.90nm rms, which is less than one-half the wavefront error of set-2.
The recent experimental results of EUV wavefront metrology in EUVA are reported. EUV Experimental Interferometer (EEI) was built at the NewSUBARU synchrotron facility of University of Hyogo to develop the most suitable wavefront measuring method for EUV projection optics. The result is to be reflected on EWMS (EUV Wavefront Metrology System) that measures wavefront aberrations of a six-aspherical mirror projection optics of NA0.25, of a mass-production EUV lithography tool. The experimental results of Point Diffraction Interferometer (PDI) and Lateral Shearing Interferometer (LSI) are shown and the error factors and the sensitivity of astigmatism measurements of these methods are discussed. Furthermore, for reducing these kinds of errors, another type of shearing interferometer called DTI (Digital Talbot interferometer) is newly introduced.
We fabricated molybdenum (Mo)/silicon (Si) multilayers with low-pressure rotary magnet cathode (RMC) sputtering, which can
be performed at a lower gas pressure (about 0.1Pa) than conventional magnetron sputtering. We obtained high reflectivity at a
wavelength of extreme ultraviolet (EUV) in Mo/Si multilayers sputtered with low-pressure xenon (Xe) gas. The measured
maximum reflectivity was approximately 71%. We confirmed that the multilayers sputtered at a lower pressure exhibited higher
reflectivity. From the transmission electron microscope (TEM) cross-sectional images we observed thinner interdiffusion layers
between Mo and Si layers in multilayers sputtered by RMC sputtering than in those sputtered by ion-beam sputtering. The Mo
single layer deposited by RMC sputtering had tensile stress and the Si single layer had compressive stress. By changing the Γ
ratio (the fractional thickness ratio of a Mo layer to the total thickness of a Mo layer and a Si layer) of the multilayer coatings, the
film stress was controlled from tensile to compressive. However, for large Γ ratios, the interface roughness was increased and the
EUV reflectivity was reduced. We have developed a doubly stacked multilayer structure that can provide low stress and high
EUV reflectivity simultaneously. By using this technique, the stress of multilayer coatings was reduced to -6MPa while
maintaining the high EUV reflectivity of 69%.
Aspherical mirror fabrication of HiNA set-3 projection optics was completed. By using a new polishing method, we successfully reduced low spatial frequency roughness (LSFR), mid spatial frequency roughness (MSFR) and high spatial frequency roughness (HSFR) compared with HiNA set-1 and set-2 projection optics. MSFR, which strongly affects the flare of the optics, was remarkably reduced to less than 0.2nm rms. HiNA projection optical system with the numerical aperture of 0.3 consists of two aspheric mirrors (M1 and M2). We had already fabricated two sets of the HiNA projection optics. The wavefront error (WFE) of the set-1 optics was 7.5nm rms and that of the set-2 optics was 1.9nm rms. We tried to reduce the WFE and flare in the set-3 optics. The target number of WFE of the set-3 optics was less than 1nm rms. The LSFR, MSFR and HSFR of the M1 of the set-3 optics were 0.25nm rms, 0.17nm rms and 0.10nm rms, respectively. The LSFR and MSFR are almost half values compared with those of the M1 for the set-2 optics. The HSFR was also reduced from 0.13nm rms (set-2) to 0.10nm rms (set-3). The LSFR and MSFR of the M2 were 0.25nm rms and 0.20nm rms, respectively. The estimated wavefront error calculated from these LSFR numbers is 0.7nm rms.
Point diffraction interferometry (PDI) is a promising candidate of the wavefront metrology for EUV lithographic projection optics. However, the pinhole used in the PDI is easily filled up with carbon contamination induced by EUV irradiation. We have evaluated the filling rate of pinholes by measuring decreasing rates of intensity of EUV radiation that passed through the pinholes. As a result, we found the filling rates of the pinholes depend on their materials and blowing of the oxygen. The filling rate was the slowest when the pinhole made of Ni was used and oxygen was blown.
We present the theoretical measurement accuracy analysis for at wavelength characterization of the projection lens to
be used in extreme-ultraviolet lithography (EUVL) and the first experimental result from the lateral shearing
interferometer (LSI) test system. LSI is one of the potential candidates for high Numerical Aperture (NA) optics testing
at the EUV region during alignment of the projection optics. To address the problem of multiple-beam interference, we
propose a general approach for derivation of a phase-shift algorithm that is able to eliminate the undesired 0th order
effect. The main error source effects including shear ratio estimation, hyperbolic calibration, charge coupled device
(CCD) size effect, and CCD tilt effect are characterized in detail. The total measurement accuracy of the LSI is
estimated to be within 7mλ rms (0.1 nm rms at 13.5 nm wavelength).
An Experimental extreme ultraviolet (EUV) interferometer (EEI) using an undulator as a light source was installed in New SUBARU synchrotron facility at Himeji Institute of Technology (HIT). The EEI can evaluate the five metrology methods reported before. (1) A purpose of the EEI is to determine the most suitable method for measuring the projection optics of EUV lithography systems for mass production tools.
Mo (molybdenum)/Si (silicon) multilayers were deposited by low-pressure RMC (rotary magnet cathode) sputtering, which can operate at a gas pressure (about 0.1Pa) lower than that conventional magnetron sputtering. We obtained a high EUV (extreme ultraviolet) reflectivity in the Mo/Si multilayers sputtered with low-pressure Xe gas. The measured maximum EUV reflectivity was about 71%. We confirmed that the multilayers sputtered at a low pressure exhibited high EUV reflectivity. From the TEM (transmission electron microscopy) images of the multilayers we observed thinner interdiffusion layers between Mo and Si layers in the multilayers deposited by RMC sputtering than in those deposited by ion-beam sputtering. The Mo single layer deposited by RMC sputtering has tensile stress and the Si single layer has compressive stress. By changing the Γ ratio (the fractional thickness ratio of a Mo layer to the total thickness of a Mo layer and a Si layer) of multilayer coatings, film stress can be converted from tensile to compressive. However, for larger Γ ratio, interface roughness increases and EUV reflectivity decreases. We have developed a doubly stacked multilayer structure that has low stress and high reflectivity. Using this technique, the stress of multilayer coatings can be reduced to -6 MPa.
In visible-light point diffraction interferometer (PDI), in order to achieve measurement error <0.1 - 0.2 nm rms, wavefront irregularity from the pinhole must be supressed as 0.05 - 0.1 nm rms in designing. It is so difficult to execute such high accurate (10-4λ) simulation because the numerical electromagnetic simulation shows slow convergence in the visible-region. We discussed this problem by using 2D-model and found simulation conditions to obtain significant results. By using the simulator, several kind of systematic erros have been analyzed and optimized.
We have developed a high numerical aperture (NA) small-field exposure system (HiNA) for EUV exposure process development. NA of projection optics of EUV exposure tools for 45-nm node lithography is expected to be around 0.25, which is higher than that previously expected (0.1). HiNA has compatible illumination system, which can be switched to partial coherent illumination and coherent illumination by changing some optical elements. Coherent illumination system was prepared for a high contrast imaging but the uniformity of intensity is less than that of partial coherent illumination. A reflected-type fly*fs-eye element was adopted for partial coherent illumination, which can provide uniformity of both coherency and intensity simultaneously. The coherency of the partial coherent illumination is 0.8. HiNA projection optics consists of two aspheric mirrors, with the NA and the imaging field of 0.3 and 0.3×0.5mm2, respectively. We fabricated two sets of projection-optics. Although the wavefront error of set-1 optics was 7nmRMS, that of set-2 optics was improved to 1.9nmRMS, which was measured with a point diffraction interferometer (PDI) using He-Ne laser. The wavefront error of the set-2 optics was improved by using a new mirror mount mechanism. The mount system consists of several board springs made of super invar in order to minimize the deformation of mirrors by mounting stress. The projection optics of the set-2 has a remote controlled mirror adjustment mechanism which has five degrees of freedom (X,Y,Z,X-Tilt and Y-Tilt). The position of the concave secondary mirror was adjusted precisely with measuring the wavefront error using PDI.
We fabricated molybdenum (Mo)/silicon (Si) multilayers with a low-pressure rotary magnet cathode (RMC) sputtering system under several deposition conditions and investigated their properties. We obtained a high extreme UV (EUV) reflectivity of approximately 71% as measured in Mo/Si multilayers sputtered with low-pressure xenon (Xe) gas. We confirmed that the multilayers sputtered with Xe gas exhibited higher reflectivity than those sputtered with argon (Ar) gas, and that the multilayers sputtered at a lower pressure exhibited higher reflecitivty than those sputtered at a higher pressure. From trans mission electron microscope (TEM) cross-sectional images of the high-reflectivity Mo/Si multilayers, we observed thinner interdiffusion layers between the Mo and Si layers than those in Mo/Si multilayer where a 50-pair multilayer with a Γ ratio (the fractional thickness ratio of a Mo layer to the total thickness of a Mo layer and a Si layer) of 0.35 with compressive stress was stacked upon a 30-pair multilaeyr with a Γ ratio of 0.7 with tensile stress.
An experimental extreme UV (EUV) interferometer (EEI) using an undulator light source was designed and constructed for the purpose of developing wavefront measurement technology with the exposure wavelength of the projection optics of EUV lithography systems. EEI has the capability of performing five different EUV wavefront metrology methods.
We investigated the effects of oxygen and nitrogen atoms on stress reduction in low-stress multilayers developed by us. It was considered that the presence of non-argon atoms in molyndenum layers caused the stress change in the multilayers, because in the ion-beam polishing (IBP) of low-stress multilayers, we found that air was mixed with the argon gas for IBP with an assisting ion source. We analyzed the composition of the low-stress multilayer with oxygen- and nitrogen-mixed gas in the depth direction and detected oxygen and nitrogen atoms near the surface of the molybdenum layers. We also used an in situ stress monitoring system developed by us and investigated the contribution to stress reduction of each process with/without oxygen and nitrogen. We found that there were thresholds for both oxygen gas flow rate and thickness oxygen-doped molybdenum layers (i.e., molybdenum oxide layers) to suppress the compressive stress change in silicon layers. It was considered that the molybdenum oxide layers functioned as barrier layers to impede the formation of the interdiffusion layers causing strain, resulting in the suppression of the compressive stress change in subsequent silicon layers.
We have developed a new stress control technique in which modified molybdenum (Mo)/silicon (Si) multilayers are deposited by ion-beam sputtering, together with a method of sub-multilayering of each Mo layer into a trilayer of Mo/ruthenium (Ru)/Mo and a method of ion-beam polishing (IBP) after the deposition of each Mo layer. We fabricated conventional and stress-controlled Mo/Si multilayer coatings using an ion-beam sputtering system and measured the internal stress of these coatings. The conventional Mo/Si multilayers had a compressive stress of approximately - 450 MPa, while the stress-controlled multilayers had a tensile stress of +13 MPa. The modified Mo/Si multilayers had the same reflectivity as and a slightly larger bandwidth than the conventional ones. For the purpose of investigating the mechanism of stress control, we have developed an in situ stress monitoring system using an electrostatic capacitance. For single-layer Mo films, tensile stress was observed in the early stage of film growth. In the case of the conventional Mo/Si multilayers, partial stress was tensile during the deposition of Mo layers, but became compressive during the deposition of Si layers. In the case of the stress-controlled multilayers, it was observed that IBP of the surface of each Mo layer suppressed the generation of compressive stress in the ensuing Si layers.
We have successfully developed a simple, laboratory-sized EUV reflectometer EUMOR (extreme Ultraviolet Monochromatic Reflectometer). A CO2 gas-jet-target laser-plasma source was employed as the EUV source for EUMOR. EUMOR uses a single line emission at the wavelength of 12.98 nm from a CO2 gas-jet-target laser-plasma source without a grating, therefore it can achieve simultaneous high spectral resolution and high throughput. The intensity of EUV emission from the CO2 gas-jet target laser-plasma was quantitatively evaluated, and the EUV flux that irradiated the surface of a sample was estimated to be 5x10(superscript 5 photons/shot. Four Mo/Si multilayer mirrors which were deposited under the same conditions with different layer periods were measured by EUMOR. The parameters of these multilayer mirrors, which were obtained by parameter fitting to the measured angular distribution of the reflectivity, showed good agreement with each other, demonstrating the reliability of EUMOR data.
EUV lithography is a successor to DUV/VUV lithography, and is the final photon base lithography technology. The concept of EUV scanners for 50nm node and below is considered by clarifying the similarities and differences between EUV scanners and DUV scanners. Illumination optics, projection optics, wafer alignment sensors and wafer focus sensors are examined. And the throughput model, overlay budget and focus budget are introduced. The concrete design of illumination optics and the requirements for sources are described. Numerical aperture, magnification and field size are discussed. EUV scanners for 50nm node and below are realized.
We developed an in-situ stress monitoring system using variable electrostatic capacitance with a Si wafer cantilever as the moveable electrode of a parallel capacitor. The stress behaviors during the deposition of thick molybdenum (Mo) single layers, conventional molybdenum/silicon (Mo/Si) multilayers and low-stress multilayers (Mo/Si multilayers modified using sub-multilayering and ion beam polishing (IBP)) were observed. In the case of a Mo single layer, at an early stage of deposition to about 40 Angstroms thickness the partial stress was tensile, and after that the partial stress became compressive. In the case of conventional Mo/Si multilayers, a modulation of stress was observed. After Mo-layer deposition the partial stress became tensile, whereas after Si-layer deposition it became compressive, leading to a compressive total stress. In the case of the low-stress multilayers that we developed, we observed the suppression of compressive stress changes of the Si-layer after the IBP of the Mo surface. The control of the partial stress changes of each layer will make it possible to control the total stress of multilayers.
In order to evaluate the performance of multilayer optics, we have successfully developed a simple, laboratory-sized reflectometer that can be operated readily on a routine basis. This reflectometer makes use of a single line emission at the wavelength of 12.98 nm from a CO2 gas-jet laser-plasma x-ray source that can be readily operated on a routine basis. Our reflectometer achieved repeatability of less than +/- 0.8% in reflectivity measurements. The peak reflectivity of a sample determined by calculation based on multilayer mirror parameters obtained from our reflectometer was within +/- 1.3% of that obtained by an SR-based reflectometer. These results confirm that our reflectometer performs well enough to evaluate multilayer optics.
We have assembled and aligned projection optics for extreme ultraviolet (EUV) lithography. The projection optics consists of three aspherical mirrors. First, the positions of the mirrors were coarsely adjusted using the side and back surface of the mirrors. Next, the mirrors were finely aligned to minimize the wavefront errors which were measured by an interferometer. The adjustable axes were selected according to the results of the analysis of the allowable error range. The compensation values for each adjustable axis were calculated by commercially available ray-tracing software. After the alignment procedure, the wavefront error of 3 nm RMS was achieved.
Extreme ultraviolet lithography (EUVL) is one of the candidates to fabricate a sub-0.1 micrometer-pattern. We have developed an Engineering Test Stand (ETS-0) which consists of three aspherical mirrors imaging optics for EUVL. This optics meets the specification of sub-0.1 micrometer generation. The key technology of EUVL is a development of reduction optics. The requirements of both figure error and surface roughness are less than 0.3 nm, and the wave-front error (WFE) of optical system has to be reached to be less than (lambda) /14 rms, where (lambda) is the exposure wavelength. Therefore, the high-precision fabrication and alignment techniques for the optics are required. We have developed the alignment procedure of three-aspherical-mirror optics to minimize the WFE, by the Fizeau-type interferometer using He-Ne laser ((lambda) equals 632.8 nm) and by the ray trace program (CODE-V). Namely, we have found the effective mirror-adjustment-axis to realize the high-precision alignment. The effective axis is decided by the priority for the adjustment axis. The priority is lead by two methods. One method is decided by the contribution to the WFE reduction that was calculated by CODE-V. The other method is decided by the correlation between the amount of decentration (shift for X-axis or Y-axis direction), despacing (shift for Z-axis direction), tilt of each mirror and the F.Z.- coefficients. The mirror is adjusted in the order of the priority of mirror axis. As a result, the WFE of 3 nm RMS has been achieved by using this alignment procedure in three- aspherical-mirror optics.
A three-aspherical-mirror system for Extreme Ultraviolet Lithography has been developed. The aspherical mirrors were fabricated using the computer controlled optical surfacing (CCOS) process and a phase shift interferometer. The mirrors have a figure error of 0.58 nm and surface roughness of 0.3 nm. In order to obtain a high efficiency mirror, M1 and M2 were coated with a graded d-spacing Mo/Si multilayer and mirror M3 was coated with a uniform d-spacing Mo/Si multilayer. The peak reflectivity is 65% at the wavelength of 13.5 nm. The wavelength matching of each mirror spans 0.45 nm. The mirrors were aligned with a Fizeau-type phase shift interferometer, and a final wavefront error of less than 3 nm was achieved. Exposure experiments carried out at new Subaru synchrotron facility revealed that this system is capable of replicating a 56 nm pattern in a 10 mm X 1 mm exposure field.
Modified molybdenum/silicon (Mo/Si) multilayers were deposited by ion beam sputtering (IBS). We obtained low-stress multilayers by sub-multilayering each Mo-layer into a trilayer of Mo/Ru (ruthenium)/Mo, and argon (Ar) ion beam polishing (IBP) after each Mo-layer deposition. Conventional Mo/Si multilayers have compressive stress of about -450 MPa, while the low-stress multilayers which we have developed have tensile stress of +14 MPa, on average. The method used is not a heating process such as annealing, thus it does not cause irreversible deformation of the precisely-figured mirror substrates of optics. It is expected that the application of low-stress multilayers to mirrors for reflection of light with a wavelength of 13 nm will make it possible to compose optics without worsening optical properties due to deformation of substrates by the stress of multilayer coatings.
In order to investigate industrial applications of synchrotron radiation, Hyogo Prefecture is constructing a synchrotron radiation (SR) ring at the SPring-8 site. It will operate at an electron energy of 1.5 GeV. In September, 1998, the ring will be commissioned when the SPring-8 injector begins feeding electrons into it. We developed a beam line for EUVL under the industrial applications program. In addition, we are developing a three-spherical- mirror system for EUVL. The specifications of the exposure tool target the 0.1-micrometers generation on the SIA road map. This tool consists of illumination optics, a scanning and alignment mechanism, 3-aspherical-mirror optics, and a load- lock chamber for exchanging wafers. The exposure tool is installed in a thermal chamber located at the end of the beamline. Using this system, we plan to develop a 0.1-micrometers process and fabricate MOS devices with feature sizes of 0.1- micrometers and below.
We present the development status of the normal incidence XUV multilayer mirrors for XUV Doppler telescope, which observes coronal velocity fields of the whole sun. The telescope has two narrow band-pass multilayer mirrors tuned to slightly longer and shorter wavelengths around the Fe XIV line at 211.3 Angstrom. From the intensity difference of the images taken with these two bands, we can obtain Dopplergram of 1.8 MK plasma of the whole sun. It is required that the multilayer has high wavelength-resolution ((lambda) /(Delta) (lambda) approximately 30 per mirror), anti-reflection coating for intense He II 304 angstrom emission line and high d-spacing uniformity of approximately 1%.
We present an overview of an ongoing Japanese sounding rocket project with the Solar XUV Doppler telescope. The telescope employs a pair of normal incidence multilayer mirrors and a back-thinned CCD, and is designed to observe coronal velocity field of the whole sun by measuring line- of-sight Doppler shifts of the Fe XIV 211 angstroms line. The velocity detection limit is estimated to be better than 100 km/s. The telescope will be launched by the Institute of Space and Astronautical Science in 1998, when the solar activity is going to be increasing towards the cycle 23 activity maximum. Together with the overview of the telescope, the current status of the development of each telescope components including multilayer mirrors, telescope structure, image stabilization mechanism, and focal plane assembly, are reviewed. The observation sequence during the flight is also briefly described.
KEYWORDS: Silicon, Reflectivity, Molybdenum, Sputter deposition, X-rays, Ion beams, Interfaces, Transmission electron microscopy, Chemical species, Analytical research
Molybdenum/silicon multilayers were deposited by ion beam sputtering and radio-frequency magnetron sputtering. X-ray reflection, transmission electron microscopy and Auger electron spectroscopy studies were performed to characterize these multilayers. There was a difference in soft x-ray reflectivity. The reason for the difference was found to be the difference in the thickness of silicide layers which were formed at each interface of the multilayers.
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