Mr. Takaharu Miura Profile

Takaharu Miura

General Manager at Nikon Corp

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Publications (9)

Proceedings Article | 20 March 2010 Paper

Nikon EUVL development progress update

Takaharu Miura, Katsuhiko Murakami, Hidemi Kawai, Yoshiaki Kohama, Kenji Morita, Kazunari Hada, Yukiharu Ohkubo

Proceedings Volume 7636, 76361G (2010) https://doi.org/10.1117/12.846459

KEYWORDS: Extreme ultraviolet lithography, Projection systems, Mirrors, Extreme ultraviolet, Lithography, Light sources, Carbon, Reflectivity, Lithographic illumination, Coating

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Proceedings Article | 18 March 2009 Paper

Nikon EUVL development progress update

Takaharu Miura, Katsuhiko Murakami, Hidemi Kawai, Yoshiaki Kohama, Kenji Morita, Kazunari Hada, Yukiharu Ohkubo

Proceedings Volume 7271, 72711X (2009) https://doi.org/10.1117/12.813384

KEYWORDS: Extreme ultraviolet lithography, Projection systems, Extreme ultraviolet, Carbon, Mirrors, Light sources, Wavefronts, Lithography, Photomasks, Contamination control

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Proceedings Article | 4 December 2008 Paper

Development of EUV lithography tools at Nikon

Katsuhiko Murakami, Tetsuya Oshino, Hiroyuki Kondo, Hiroshi Chiba, Kazushi Nomura, Hidemi Kawai, Yoshiaki Kohama, Kenji Morita, Kazunari Hada, Yukiharu Ohkubo, Takaharu Miura

Proceedings Volume 7140, 71401C (2008) https://doi.org/10.1117/12.804706

KEYWORDS: Projection systems, Extreme ultraviolet lithography, Mirrors, Extreme ultraviolet, Wavefronts, Lithography, Polishing, Aspheric optics, Multilayers, Optical design

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Proceedings Article | 26 March 2008 Paper

Nikon EUVL development progress update

Takaharu Miura, Katsuhiko Murakami, Kazuaki Suzuki, Yoshiaki Kohama, Kenji Morita, Kazunari Hada, Yukiharu Ohkubo, Hidemi Kawai

Proceedings Volume 6921, 69210M (2008) https://doi.org/10.1117/12.772444

KEYWORDS: Extreme ultraviolet lithography, Projection systems, Reflectivity, Light sources, EUV optics, Photomasks, Extreme ultraviolet, Lithography, Reticles, Line edge roughness

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Extreme Ultra Violet Lithography (EUVL) has been widely regarded as the lithography technology to succeed optical lithography. It is now considered as one of the most promising technologies below hp45nm node [1], following ArF immersion lithography considering trend of achievable process K1 factors. In this paper we would like to present our significant progress on the development of EUV exposure tool. There are several key important areas which should be developed to realize EUVL to be feasible, such as reflective mask, resist, and tool itself. The reflective mask features such characteristics as pellicle-less, ultra-smooth blank flatness and defect free. The resist should be of high sensitivity and small line edge roughness (LER) as well as fine resolution. EUV exposure tool itself consists of major modules such as EUV light source, projection optics, vacuum body, vacuum stages, and so on. Nikon has developed new polishing technologies such as ion-beam figuring and elastic emission machining, and new ultra high-precision interferometers for aspheric surface metrology. Our multi-layer coating technology has been also improved. High reflective Mo/Si multi layer coating has been successfully achieved and irradiation tests using synchrotron radiation have been conducted. Successful achievement of those developments enables us to produce full-field projection optics for EUVL process development tool called EUV1. The proto-type development of full-field projection optics has been successfully completed and its technical achievement has reflected into production optics. Preparation of complete set of production and metrology tools necessary for projection optics production was completed and all tools are now in full operation. Nikon has already developed dual pod reticle carrier for EUV1 tool. In parallel Nikon has been developing the same concept carrier for HVM in cooperation with Canon and Entegris. Regarding to EUV1 tool development, all modules of EUV1 such as full-field projection optics module, illumination optics module, vacuum body module, vacuum compatible reticle/wafer stage modules, reticle/wafer loader modules, EUV light source module have been completed. Nikon has already started EUV1 module installation process and the module level function and basic performance have been being checked. Nikon will complete module integration to achieve the first exposure result. Some development results will be shown which lead to confidence for realization of EUVL. Nikon also would like to announce that development of 1st generation production EUVL tool named EUV2 has been studied.

Proceedings Article | 13 March 2007 Paper

Nikon EUVL development progress update

Takaharu Miura, Katsuhiko Murakami, Kazuaki Suzuki, Yoshiaki Kohama, Kenji Morita, Kazunari Hada, Yukiharu Ohkubo

Proceedings Volume 6517, 651707 (2007) https://doi.org/10.1117/12.711267

KEYWORDS: Extreme ultraviolet lithography, Projection systems, Reticles, Light sources, Reflectivity, Extreme ultraviolet, Photomasks, EUV optics, Wavefront sensors, Semiconducting wafers

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Extreme Ultra Violet Lithography (EUVL) has been widely regarded as the lithography technology to succeed optical lithography. It is now considered as one of the most promising technologies below hp45nm node [1], following ArF immersion lithography considering trend of achievable process K1 factors shown in Fig. 1. In this paper we would like to present significant progress on the development of EUV exposure tool. There are several key important areas which should be developed to realize EUVL to be feasible such as reflective mask, resist, and tool itself. The reflective mask features such characteristics as pellicle-less, ultra-smooth blank flatness and defect free. The resist should be of high sensitivity and small line edge roughness (LER) as well as fine resolution. EUV exposure tool itself consists of major modules such as EUV light source, projection optics, vacuum body, vacuum stages, and so on. As far as EUVL optics development is concerned, through the development of high-NA small-field EUV exposure system (HiNA) in conjunction with EUVA (Extreme Ultraviolet Lithography System Development Association) projects, we have developed new polishing technologies such as ion-beam figuring and elastic emission machining, and new ultra high-precision interferometers for aspheric surface metrology. Wave front sensor system has been also developed partly in EUVA project. A new wave front sensor system which can be used for evaluating the projection optics with EUV light has already been installed in New SUBARU synchrotron facility in University of Hyogo. Our multi-layer coating technology has been also improved. High reflective Mo/Si multi layer coating has been successfully achieved and irradiation tests using synchrotron radiation have been conducted [8]. Successful achievement of those developments enables us to produce full-field projection optics for EUVL process development tool called EUV1. Proto-type development of full-field projection optics has been successfully completed and evaluated to be of enough performance. Preparation of complete set of production and metrology tools necessary for projection optics production was completed and all tools are now in full operation. Nikon has studied reticle protection method and developed Dual Pod Concept in cooperation with Canon. Nikon also has developed its own reticle cover to be implemented in EUV1 tool. Nikon has completed almost all module fabrication such as full-field projection optics module, illumination optics module, vacuum body module, vacuum compatible reticle/wafer stage modules, reticle/wafer loader modules, and EUV light source module. Nikon has already got into module integration production process to meet EUV1 development schedule. Nikon announced to start EUV1 tool installation in 1st half of 2007 and has been proceeding it on schedule. Nikon also would like to announce that development of 1st generation production EUVL tool dubbed EUV2 is now considered and that system concept design is under way.

Proceedings Article | 10 March 2006 Paper

Nikon EUVL development progress summary

Takaharu Miura, Katsuhiko Murakami, Kazuaki Suzuki, Yoshiaki Kohama, Yukiharu Ohkubo, Takeshi Asami

Proceedings Volume 6151, 615105 (2006) https://doi.org/10.1117/12.656243

KEYWORDS: Extreme ultraviolet lithography, Reticles, Mirrors, Projection systems, Coating, Reflectivity, Polishing, Particles, EUV optics, Surface finishing

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Extreme Ultra Violet Lithography (EUVL) is considered as the most promising technology below hp45nm node, following ArF immersion lithography. In this paper we would like to present significant progress on the development of EUV exposure tool with recent encouraging data of mirror polishing accuracy and evaluation results of Nikon reticle protection concept. EUV exposure tool consists of major important modules such as EUV light source, projection optics, and so on. As far as EUVL optics development is concerned, through the development of high-NA small-field EUV exposure system (HiNA), our mirror polishing and metrology technologies of aspheric mirror surface and multi-layer coating technology have been remarkably improved and enable us to fabricate high-precision aspheric mirrors which meet the specification for EUV pre-production tools called EUV1. In the EUVA (Extreme Ultraviolet Lithography System Development Association) project, we have developed new polishing technologies such as ion-beam figuring and new high-precision interferometers for aspheric surface metrology. Wave front sensor systems have been also developed partly in EUVA project. Installation of a new wave front sensor system which can be used for evaluating the full-field projection optics with EUV light has already been started in New SUBARU synchrotron facility in University of Hyogo. EUV1 tool system design and its detailed design of all modules such as full-field projection optics module, illumination optics module, vacuum body module, vacuum compatible reticle/wafer stage modules, reticle/wafer loader modules have been completed. The results of development and prototyping of major modules such as vacuum stage modules and vacuum body module have been reflected in the actual tool design. Nikon has been also heavily involved in the infrastructure development such as mask handling development. In order to meet industry demands, Nikon has been already getting into EUV1 module fabrication phase. Nikon announces that EUV1 tool is scheduled to be delivered in 1^st half of 2007.

Proceedings Article | 6 May 2005 Paper

Nikon EPL tool: the latest development status and results

Takaharu Miura, Shintaro Kawata, Kazunari Hada, Yukio Kakizaki, Masaya Miyazaki, Kazuaki Suzuki, Noriyuki Hirayanagi, Atsushi Yamada, Junji Ikeda, Takehisa Yahiro, Jin Udagawa, Hidekazu Takekoshi, Takaaki Umemoto, Yukiharu Ohkubo, Toshimasa Shimoda, Toru Tanida, Yoichi Watanabe, Kaoru Ohmori, Futoshi Mori, Shigeru Takemoto, Takeshi Yoshioka, Kenji Morita

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.598687

KEYWORDS: Semiconducting wafers, Reticles, Electron beams, Wafer-level optics, Electron beam lithography, Photomasks, Control systems, Projection lithography, Lithography, Reliability

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SPIE Journal Paper | 1 October 2002

Nikon electron beam projection lithography tool development summary

Takaharu Miura, Tatsuo Sato, Masaya Miyazaki, Kazunari Hada, Yu Sato, Masateru Tokunaga, Yukio Kakizaki

JM3, Vol. 1, Issue 03, (October 2002) https://doi.org/10.1117/12.10.1117/1.1504101

KEYWORDS: Electron beams, Semiconducting wafers, Magnetism, Electron beam lithography, Reticles, Projection lithography, Metrology, Control systems, Data modeling, Optical lithography

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Proceedings Article | 1 July 2002 Paper

Nikon EPL tool development summary

Takaharu Miura, Tatsuo Sato, Masaya Miyazaki, Kazunari Hada, Yu Sato, Masateru Tokunaga

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472330

KEYWORDS: Semiconducting wafers, Magnetism, Reticles, Electron beams, Control systems, Metrology, Optical lithography, Lithography, Actuators, Error analysis

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