Airborne molecular contamination (AMC) in the form of bases, acids and condensable organic and inorganic substances threaten both costly and sensitive optics and mask pattern formation in the chemically amplified resists (CAR) used for both E-beam and laser lithography. This is particularly so for mask pattern generators due to the relatively long writing times. In the development work of the SLM-based DUV-laser mask pattern generator Sigma7300, AMC aspects have been taken into consideration from an early stage. That includes e.g. analysis and selection of construction materials and development of handling methods as well as application of chemical filtering systems. Tool manufacturer and filter supplier have together specified and designed efficient hybrid filtration systems for use in Sigma7300. This paper describes AMC aspects specific for mask pattern generators, the successful design actions of the Sigma7300 and verifying analyses of the processes.
Atmospheric pressure deep UV lithography using fast chemically amplified photoresists (CAR) will be the mainstay of photomask production into the foreseeable future. Issues surrounding the sensitivity of chemically amplified photoresists to molecular bases such as ammonia, NMP, TMA and related compounds, have been the sources of intensive study and numerous publications1,2,3. Photoresist sensitivity issues challenge photoresist suppliers' abilities to improve resistance to airborne molecular contamination, equipment suppliers' abilities to control molecular bases within the tool and photomask/reticle manufacturers' capability to adapt their cleanroom environments and lithography processes for CAR.
In this paper, the authors discuss the critical airborne molecular contaminants found in DUV photolithography facilities. They present an overview of real-time monitoring methodologies that can detect and measure these contaminants at low concentrations, enabling users to anticipate and resolve AMC challenges before production problems can result. Citing actual examples of how real-time monitoring is being employe din production fabs, the authors examine single point investigate and multi-point process monitoring strategies, compare the different monitoring strategies, compare the different monitoring technologies now is use, and describe critical points to monitor in tracks, steppers, clean rooms, and air filtration systems. As a separate item, the authors describe an innovative, practical approach to quantifying resist environment sensitivity. It is anticipated this work will result in a standard methodology that can be used at individual process sites to determine the resist sensitivity to airborne molecular contamination under local operating conditions.
One such issue is the quantitative control of critical dimension (CD) and how to calibrate fab contamination levels to linewidth control. Since most fabs build several generations of devices, contamination levels for older generations may not be suitable for new generations. Therefore, studies to control CD for each generation are required to determine the effectiveness of filtration schemes. In this paper the authors have investigated CD control for imaging dimensions from 0.25 micrometers to 0.15 micrometers . We have also correlated this data back to chemical monitoring levels to determine CD vs. PED stability for these geometry's to determine the contamination level tolerance. Additionally, the authors have generated process windows to determine the effect such delays have on process windows.
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