1310nm long-wavelength vertical-cavity surface-emitting lasers (VCSELs) have a wide application prospect in optical data transmission over long distances, in particular for hybrid integration with silicon photonics. With the wide application of 1310nm VCSEL, the reliability requirement is becoming more and more high. In this paper, the degradation mechanism of 1310nm VCSEL is studied by accelerated stress aging experiment. The device accelerates aging for 4000 hours at 8 mA, the maximum output power decreases by 0.04 mW, and the power saturation current and V-I curve remain basically unchanged. Leakage current of the device increases and reverse bias breakdown voltage decreases. Current noise power spectral density of the device is an order of magnitude higher than before aging. In addition, the device with degraded performance is characterized by optical emission microscopy. When the device is forward biased, dark spot defect is found on the edge of the light-emitting hole of the device after burnin. The internal topography of the device is characterized by FIB-SEM, and the oxide layer warpage is found. This is due to the increase of heat inside the device and the increase of stress in oxide layer, resulting in degradation of device’s performance.
The HgCdTe Photodiode is the most basic and important unit of HgCdTe IRFPA (Infra-red focal plane array) detectors, which have been widely used in the fields of security, fire protection, remote sensing and deep space detection. For HgCdTe IRFPA, the trapped charges of the HgCdTe material and the ionic charges introduced during the preparation process are the factors, other than environmental stress, that have the greatest impact on IRFPA performance. The trapped charges come from the trap energy level in the HgCdTe material, which exist during the crystal growth process and can be improved by adjusting the growth conditions, but it cannot be completely avoided. The ionic charges introduced during the process are generally concentrated at the interface and surface of the HgCdTe material, which can be reduced by process improvement, but cannot be completely avoided. In order to analyze the mechanism of multiple charges affecting the HgCdTe detector performance, a type of n+ -on-p HgCdTe Photodiode is selected as the object of this work, and the effects of the concentration and distribution of charges on the carrier distribution and energy band structure of the n+ -on-p HgCdTe are analyzed in detail. The introduction of additional net charge relative to an ideal n+ -on-p HgCdTe Photodiode leads to the aggregation or scavenging of local carriers and affects the energy band structure near the charge, creating additional potential barriers or potential wells, which is likely to cause device degradation. On this basis, the optoelectronic properties of the HgCdTe Photodiode have been investigated under infrared radiation at a wavelength of 9.5 μm, as the light I–V characteristics, the dynamic resistance–voltage characteristics, band structure and carrier density distribution. According to the results of this work, the quasi-fixed charges introduced by defects or contamination will directly affect the generation rate of photogenerated carriers and affect the I–V and R–V characteristics of the HgCdTe Photodiode, leading to phenomena such as rising dark currents, decreasing spectral response, and decreasing quantum efficiency.
The waveguide branch plays an important role in integrated photonic circuits by dividing input light into two or more output lights, thereby facilitating optical power distribution and mode selection. Ordinary optical waveguides used in waveguide branches suffer from excessive optical loss and narrow branch angles, limiting their effectiveness in mode selection among other problems. Photonic crystals are constructed by arranging macroscopically homogeneous dielectric (or metallic) materials into periodic arrays, with carefully designed internal defects that provide them with frequency-selective and spatial properties. In this study, a silicon-based wide-angle waveguide branch composed of two-dimensional photonic crystals has been successfully created. The branch is capable of separating two wavelengths of light, namely 850 nm and 950 nm, by adjusting the positions of silicon cylinders in the two-dimensional photonic crystal with the purpose of optimizing optical power at different wavelengths. The silicon-based wide-angle waveguide branch is expected to be employed in multimode optical communication systems. Its utilization will contribute towards the reduction in size and complexity of integrated optical communication systems, while enhancing system reliability.
Tapered semiconductor lasers are widely used in space communication due to their high output power and high beam quality. The tapered semiconductor laser structure mainly consists of ridge region, absorption region and tapered region. The tapered semiconductor laser is analyzed by characterization methods such as EMMI, EDS and FIB-SEM in this paper. It is found that the waveguide damage in the ridge region is caused by the enhancement of the local optical power density in the ridge waveguide, and there are failure points inside the waveguide and the sidewall of the device, resulting in photon leakage. The closer to the optical cavity surface, the more holes between the solder and the electrodes, and the presence of oxygen elements near the optical cavity surface, indicating that the interface holes existing in the optical cavity surface would lead to the migration of oxygen elements. The research results reveal that the enhancement of local power density in the ridge waveguide is caused by the optical feedback process. The main failure mechanisms of the device contain the solder holes and the enhancement of local power density, which provide an important reference for the process optimization of high-power tapered semiconductor lasers.
Lithium niobate thin film (TFLN) electro-optic modulators (EOM) are widely used in optical communication systems due to their high bandwidth, low half-wave voltage, and low energy loss. Based on the analysis of the finite element method, we optimize the structure parameters of the modulator and propose an EOM with an S-bend coupler and an electrode gap covered with a SiO2 layer. The device exhibited a half-wave voltage-length product of 2.13 V · F, a bandwidth greater than 75 GHz, and an optical loss <0.1 dB / cm. Besides, we also propose employing the linear regression algorithm in machine learning to help determine the parameters of high-performance modulators, which provides a new idea for the design and optimization of TFLN modulators.
HgCdTe infrared focal plane array imaging detectors have been widely used in a variety of fields such as night vision surveillance, remote sensing mapping and astronomical observation. In recent years, with the development of semiconductor manufacturing processes, the array size of HgCdTe IR focal plane array imaging detectors has gradually increased, and the preparation process has become increasingly complex. During the preparation process, impurity ions can enter the HgCdTe material and cause degradation of device performance or even device failure. This work investigates the distribution of impurity elements in HgCdTe IR focal plane array detectors prepared by both processes and the mechanism by which impurity elements cause device failure.
The electrostatic discharge (ESD) effect and damage mechanism of Charge Coupled Device (CCD) is investigated. Transmission line pulsing (TLP) tests have been experimented to identify the instantaneous I-V characteristics of CCD detectors under ESD stress. The TLP I-V curves of the ports with or without ESD protection show different characteristics, which indicate that the electrostatic discharge is a capacitor charging process for the ports without protection. The ports with smaller capacitance such as the transfer clock and readout clocks are the weakness against ESD events. The electrostatic damage site is further analyzed using emission microscopy (EMMI) and Focused Ion beam technology (FIB), revealing that the electrostatic damage mechanism of CCD.
Cryogenic Infrared Rays Focal Plane Array (IRFPA) detectors have been widely used in industry, transportation, security monitoring, meteorology and medicine because of the high sensitivity and temperature resolution. For HgCdTe IRFPA detectors, the typical working temperature is about 80 K. To make the IRFPA detector works at low temperatures, the detector should be integrated on a Dewar cold platform, whose refrigeration power would be higher than the heat load of the IRFPA. In general, the IRFPA detector and the Dewar cold platform would be integrated together to form a Dewar assembly at room temperature. In addition, the materials in IRFPA have different thermal expand coefficients, it means the thermal mismatch in the IRFPA would be an unavoidable issue in work. The thermal strain has a significant effect on the solder joints in switching cycle, which could lead to the creep strain and thermal fatigue crack. With the increase of the switch cyclic number, the creep strain and thermal fatigue crack under the thermal stress would lead to the failure of solder joints. Therefore, the low temperature thermal strain in switching cycle can affect the reliability of IRFPA detectors. So, the low temperature thermal strain and the creep lifetime of solder joints has been researched.
Optical phased array has great potential in the fields of light detection and ranging, free-space optical communication, laser imaging and biosensors due to their excellent characteristics such as all-solid-state structure, fast scanning speed, good stability, high resolution and low cost. According to the radar equation, the transmit power will directly determine the maximum ranging distance of optical phased arrays. Limited by nonlinear effects and damage threshold, it is difficult to further increase the input optical power of Si-based OPA above 30 dB. Therefore, fully utilizing the input optical power of OPA is an important issue in the research. In this paper, we demonstrate a novel three-layer silicon antenna for OPA, which consists of a upside grating layer, a waveguide layer and a downside grating layer from top to bottom. In the simulation, we found that the upward directivity of the antenna is greater than 60% in a large wavelength range of 1413 nm to 1875 nm. In addition, the maximum upward directivity of the antenna is 94.68% at 1599nm. The above result is beneficial to increase the output power of the phased array and eliminate the blind area in the field of view when the beam is scanned to the point of destructive interference. Overall, the above results show that the design proposed in this paper has great potential for application.
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