The study investigates a new platform of PFAS-free PAGs and evaluates their lithographic efficiency in comparison to PFAS-containing counterparts in multiple model photoresists, including both negative and positive tones, across a broad range of optical exposure wavelengths. PFAS-free photoresists materials demonstrate comparable / superior lithographic performance in resolution, depth-of-focus (DOF), and exposure latitude (EL) compared with their non-degradable counterparts.
In this study, we present the development of PFAS-free AZ® FZero 3DT positive photoresist and AZ® FZero NX-3015 negative photoresist. These novel photoresists were enabled by the utilization of a newly developed PFAS-free M PAG (photoacid generator). Both AZ® FZero 3DT and AZ® FZero NX-3015 photoresists have exhibited comparable lithography performance to their PFAS-containing comparative examples on both Silicon (Si) and Copper (Cu) substrates. Furthermore, the newly developed PFAS-free M PAG has displayed good stability on Cu substrates, outperforming the commercial oxime sulfonate PAG. This stability is particularly crucial for the successful application of photoresists in the fabrication of re-distribution layers (RDL) in advanced semiconductor packaging.
Preparation and experimental studies on the phase transition and morphology of novel phosphorus-containing copolymers, having bisazobenzene units and variable molar ratio of aliphatic segments in the main chain, were performed. The chemical structure of the novel compounds has been confirmed by Fourier transform infrared and 1H-NMR spectroscopy. The thermal stability was investigated by thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) while the mesomorphic behavior was closely observed with polarized light microscope (PLM) and by X-ray diffraction measurements, structure-properties relationships being established and discussed.
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