As one of the primary products in the field of semiconductor lasers, GaAs-based semiconductor laser devices with an 808nm wavelength are widely applied in various industries such as industrial, medical, and scientific research. These devices possess substantial market potential. This paper reports on the development of a high-power array semiconductor laser device emitting at 808nm wavelength, achieved by our research team. At a temperature of 25°C, with a filling factor of 30% and an injection current of 50A, the maximum output power reaches 55.31W, and the photoelectric conversion efficiency is 58.74%. This device demonstrates exceptional emission performance.
High output power GaSb-based diode lasers are critical component for 2μm laser systems. We compare four structures with different layer thickness combinations to optimize lower cladding layer thickness. Four structures have similar optical confinement factor of active region. As the lower cladding layer thins, the threshold current increases and the series resistance slightly reduces. Among the four structures, laser with 370nm waveguide layer and 1200nm n-type cladding layer functions the best. An output power of 1.21W at 3A is obtained, the threshold current is 0.11A, the series resistance is 0.25Ωthe slope efficiency is 0.42W/A.
GaSb-based narrow Ridge Waveguide (RW) laser diodes providing high optical power with low lateral beam divergence single-transverse-mode operation are fabricated and characterized. The typical Separate-Confinement-Heterostructure (SCH) Multi-Quantum-Well (MQW) structure is grown by the solid-state Molecular Beam Epitaxy (MBE). The 1 mm long uncoated RW lasers yield single-transverse-mode output power exceeding 170 mW in the 1950 nm wavelength range under continuous-wave (cw) operation at an injection current of 800 mA and room temperature of 20 ℃. The shallow-etched 7 μm width RW design produces a lateral beam divergence angle as narrow as 9° Full Width at Half Maximum (FWHM) with an excellent beam quality of M2 factor < 2 at the maximum output power, enabling it for simple and inexpensive bulk coupling into the typical SM1950 or PM1950 fiber which has a core diameter of 7 μm and numerical aperture (NA) of 0.2. The RW lasers with high output power, good beam quality, and low divergence are promising candidates for a wide range of demanding and advanced applications including pumping fiber amplifiers and solid-state lasers, seeding external cavity lasers, and frequency conversion.
High power mid-infrared GaSb-based lasers are desired for many applications, however, the self-heating in the active region is still one of the main influence factors for practical application. In this paper, we report on fabrication and characterization of high-power GaSb-based lasers. The temperature dependence of output performance of the device was investigated. Due to the high quality of epitaxy and wide waveguide design, the lasers exhibited a high-power capability from 288 K to 318 K. Devices with a cavity length of 1.5 mm and an aperture of 100 μm delivered a power of 1.46 W at a current of 7 A at 288 K and remains 1.10 W at 318 K under CW operation limited by thermal rollover. The characteristic temperature T0 is 151 K and 68 K below and above 298 K, respectively.
GaSb-based InGaSb/AlGaAsSb double quantum well separate confinement heterostructure laser diodes had been grown by molecular-beam-epitaxy. 1000×100 μm2 stripe-type waveguide LDs with facets coated were fabricated and characterized. The high output power of 1.107 W and peak wavelength of 2.09 μm had got with injected current 5 A at working temperature 20℃. The maximum wall plug efficiency was 28.8% with injection current 0.55 A.
We have fabricated and characterized a narrow ridge waveguide InGaSb/AlGaAsSb type-I separate-confinementheterostructure (SCH) multi-quantum-well (MQW) laser diode emitting near 2.0μm. The broadened vertical waveguide laser structure is grown by the solid-state molecular beam epitaxy. The 4.5μm lateral ridge waveguide results in a single transverse mode operation of the laser with an injunction current below 200mA at a heat sink temperature of 293K. This laser diode provides a room temperature continuous-wave output power of 40mW at a driving current of 200mA with a 1mm cavity length and 97/5% high-reflection/anti-reflection coatings, mounted epi-side down. The far-field beam intensity distribution on the fast and slow axis of the laser diode demonstrates a TE00 fundamental transverse mode laser beam with the fast and slow axis beam divergence of 58°*23° full width at half maximum (FWHM). The diode lasers operating on fundamental spatial mode are efficiently coupling into optical fibers or collimating for free-space applications. The midinfrared region single transverse mode GaSb-based laser is hence an ideal light source for spectroscopic sensing and diodepumping pumping fiber amplifiers and solid-state lasers systems.
The resistivity of each layer constituting a 2μm GaSb-based laser is measured with Van der Pauw method. The operation temperature of GaTe doping source is optimized for lower resistivity. The series resistance contribution of each layer is calculated. A new laser structure is designed, 65% of the optical field distributes in quantum wells and waveguide layers while the series resistance is reduced to 0.28Ω.The laser with new design is fabricated, 0.89W continuous output power at room temperature can be achieved at a current of 3A with voltage of 1.40V. The slope efficiency of the emitter is 0.32W/A, and almost no slope efficiency is observed in the process of increasing current until 2.6A.
Mid-infrared spectral region (2-4 μm) is acquiring significant attention due to the presence of various enabling applications in the field of remote gas detection, environmental pollution detection applications. Tm:YAP is an important crystal materials for diode-pumped laser emission of 2μm wavelength. We report a room-temperature diode pumped Tm:YAP thin disk laser. The maximum output power was 3.5 W at wavelength of 1940 nm.
We report on successful fabrication of GaSb-based type-I quantum well distributed Bragg reflector (DBR) lasers emitting around 2.3μm. Second-order Bragg gratings of chromium were patterned by electron beam lithography. For 1.5-mm-long laser diode, single mode continuous-wave operation with output power of 10mW is obtained. The devices show a stable single mode operation with high side mode suppression ratio.
An experimental investigation for the polarization analysis of the high power GaSb-based semiconductor laser diodes emitting at 2.1μm in terms of measuring Stokes parameters has been exploited and adopted, which gives further insight into understanding, manipulating and applying the polarization properties of the laser diode. Results of output performance and polarization behavior of the laser are presented in the paper. The average linear polarization of the laser diode reaches 97.72% with output power exceeding 1W at 3.5A under CW operation at 20℃, which demonstrates the dominant position of linear polarization light of the output beam. Highly linear-polarized properties could not only enhance the performance of high power GaSb-based laser diodes in traditional applications in laser processing and beam combing, but also open new application fields such as parametric convention and coherent detection.
High-power InGaSb/AlGaAsSb quantum well separate confinement structure lasers are fabricated. Threshold currents of the sample lasers range from 150mA to 270mA, turn-on voltages range from 0.51V to 0.59V. Stable high power and high efficiency operation is achieved, output powers at 3A range from 978mW to 1050mW, the power conversion efficiencies at 3A range from 21.3% to 22.9%, slop efficiencies range from 0.35W/A to 0.38W/A. The capability of fabricating reliable high-power 2μm GaSb-based laser is confirmed. The current of one sample was ramped up to 6A, the emitter exhibits a high performance with peak output power of 1320mW at 5.4A,maximum power conversion efficiency of 27.5% and slop efficiency of 0.34W/A.
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