In this work, we make reduced graphene oxide (rGO) solution via chemical way and use it to fabricate Field-effect transistor (FET) channel by spin coating for investigating the performance of grapheme-based devices. An inductively coupled plasma (ICP) with very low plasma density is applied to etch the surface of rGO. It has been confirmed that residues and contaminations can be removed through etching and proper etching parameters can lead to better electrical properties more like the pristine graphene without creating defects. Considering the application of graphene added to silicon-based electronic devices, such a cleaning method can be used due to its advantages of being a low-temperature, large-area, high-throughput, and Si-compatible process.
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