We report the synthesis and characterization of nanostructured semiconductors such as CdS, CuInSe2
(CIS) and TiO2 for photovoltaic cells and photoelectrochemical cells for hydrogen production. The CdS
was prepared by chemical deposition, CuInSe2 by electrodeposition and chemical method and TiO2 by
sol-gel method. All the three semiconductors were prepared in the thin film and powder form. The CdS
was synthesized as wide band gap n-type material in the nanostructured form. The p-CdS was prepared
also in the nanostructured form with Cu doping. P-type CuInSe2 films and powders were synthesized in
the nanostructured form. TiO2 was always formed in the nanostructured and n-type form. The films and
powders were characterized by x-ray diffraction, atomic force microscopy, and opto-electronic methods.
All the semiconductors were formed in the nanostructured form with different band gaps depending on
the particle size and post-deposition treatments.
The aging (increase in film resistance with time) of CdSe thin films in oxygen and air at various substrate temperatures are reported. The films aged at low temperatures attained saturation in film resistance faster than those aged at higher substrate temperatures. This may be explained by considering the difference in the oxygen chemisorption rates in various films.
The solar control properties of vacuum deposited Cu2Se thin films were investigated and the results are reported. The optical transmittance and near normal specular reflectance characteristics of these films showed that they exhibit suitable solar control characteristics for application as solar control coatings.
Conference Committee Involvement (3)
Solar Hydrogen and Nanotechnology III
11 August 2008 | San Diego, California, United States
Solar Hydrogen and Nanotechnology II
27 August 2007 | San Diego, California, United States
Solar Hydrogen and Nanotechnology
14 August 2006 | San Diego, California, United States
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