Two-dimensional (2D) materials are gaining great attention due to their extraordinary thickness-dependent properties. 2D Ga-VI semiconductors have bandgaps in the UV region making them candidates for several LED concepts. The Indium-containing counterparts of Ga-chalcogenides moreover have small electron effective masses and high mobilities. Hence, 2D III-chalcogenides are promising materials for next-generation optoelectronic applications. We establish metal organic chemical vapor deposition (MOCVD) to find suitable growth routines for 2D materials. We will summarize our current understanding of the MOCVD growth of III-chalcogenides by systematic variation of the growth parameters and correlate the findings to optoelectronic properties of the layers.
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