Low-temperature photoluminescence spectroscopy (PL) and excitation spectroscopy(PLE) are used to characterize and compare high current density resonant tunnelling diodes (RTD) structures. RTD structural characteristics are detected using X-Ray diffraction (XRD) while the electrical characteristics are detected by PL and PLE. Results are used to link the structure electrical properties to the RTD device IV characteristic. We started focusing the attention on the first quasi bound state (e1) energy, fundamental for the RTD operation. PL is used to detect the TypeI and Type II QW radiative transitions. The e1 state is obtained by the difference between the Type I (e1–hh1) and type II (conduction band–hh1) transitions. PLE is consequently used to detect the e2-hh2 transition from which we characterize the energy of the e2 state and its position with respect to the e1 state. Experimental data are confirmed by the RTDs device IV characteristics. We highlight the combination PL and PLE as a powerful, fast, and non-destructive characterization method to link wafer properties and device performance in RTD structures.
We investigated the difference between a macro scale PL and μPL (excitation and detection area ≤ 5μm2). Low-temperature micro-photoluminescence (μPL) is used to evaluate structural perfection of high current density InGaAs/AlAs/InP resonant tunnelling diodes (RTD) structure on different length scales. The thin and highly strained quantum wells (QWs) is subject to monolayer fluctuations in well and barrier thickness that can lead to random fluctuations in their band profile. μPL is performed reducing the laser spot size using a common photolithography mask to reach typical RTD mesa size (a few square microns). We observed that for spot size around 1μm2 the PL line shape present strong differences on multiple points on the wafer. These variations in the PL is investigated by line-shape fitting and discussed in terms of variations in long-range disorder brought about by strain relaxation processes. We also highlight this μPL as a powerful and cost-effective non-destructive characterization method for RTD structures.
Resonant tunneling diodes (RTDs) are next-generation candidates for core THz generation technologies, with proven quasi-optical tunable emission capability, with centre frequencies of 0.1 - 1.98 THz at cca. 1mW, when coupled into a suitable monolithically integrated antenna. For this purpose, the strained InGaAs/AlAs/InP material system is approaching technological maturity, with its offering of high electron mobility, suitable conduction band offsets, and very low resistance contacts. However, the epitaxially thin layers used for RTDs, realise devices with current densities in excess of 10 mAμm-2 and electric fields approaching that of the breakdown of the material. As a high current density is a traditional indicator of performance for these oscillators, it is now increasingly important to grow crystalline layers with near-atomic perfection. In previous work, we showed how the inclusion of a nominally identical, un-doped electrically neutral copy of the RTD double barrier - quantum well (QW) system, leads to the observance of a type-II QW emission in addition to the type-I emission from the active region QW. This could be used to establish the quasi-bound elastic energy, whose level is directly correlated to the peak voltage of the N-shape I-V characteristic. Here we extend this approach with the addition of high-resolution X-ray diffractometry and low-temperature photoluminescence spectroscopy. Through a step-by-step process of curve fitting, comparing to simulation and results, we can comment on the quality and thickness of the ternary InGaAs alloy interfaces surrounding the AlAs barriers. These findings are confirmed with scanning transmission electron microscopy
Resonant tunnelling diodes (RTDs) are a strong candidate for future wireless communications in the THz region, offering compact, room-temperature operation with Gb/s transfer rates. We employ the InGaAs/AlAs/InP material system, offering advantages due to high electron mobility, suitable band-offsets, and low resistance contacts. We describe an RTD emitter operating at 353GHz, radiating in this atmospheric transmittance window through a slot antenna. The fabrication scheme uses a dual-pass technique to achieve reproducible, very low resistivity, ohmic contacts, followed by accurate control of the etched device area. The top contact connects the device via the means of an air bridge. We then proceed to model ways to increase the resonator efficiency, in turn improving the radiative efficiency, by changing the epitaxial design. The optimization takes into account the accumulated stress limitations and realities of reactor growth. Due to the absence of useful in-situ monitoring in commercially-scalable metal-organic vapour phase epitaxy (MOVPE), we have developed a robust non-destructive epitaxial characterisation scheme to verify the quality of these mechanically shallow and atomically thin devices. A dummy copy of the active region element is grown to assist with low temperature photoluminescence spectroscopy (LTPL) characterisation. The resulting linewidths limits the number of possible solutions of quantum well (QW) width and depth pairs. In addition, the doping levels can be estimated with a sufficient degree of accuracy by measuring the Moss-Burstein shift of the bulk material. This analysis can then be combined with high resolution X-ray diffractometry (HRXRD) to increase its accuracy.
Resonant tunneling diodes (RTDs) provide high speed current oscillation which is applicable to THz generation when coupled to a suitably designed antenna. For this purpose, the InGaAs/AlAs/InP materials have been used, as this system offers high electron mobility, suitable band-offsets, and low resistance contacts. However for high current density operation (~MA/cm2) the epitaxial structure is challenging to characterize using conventional techniques as it consists of a single, very thin AlAs/InGaAs quantum well (QW). Here, we present a detailed low temperature photoluminescence spectroscopic study of high current density RTDs that allow the non-destructive mapping of a range of critical parameters for the device. We show how the doping level of the emitter/collector and contact layers in the RTD structure can be measured using the Moss-Burstein effect. For the full device structure, we show how emission from the QW may be identified, and detail how the emission changes with differing indium composition and well widths. We show that by studying nominally identical, un-doped structures, a type-II QW emission is observed, and explain the origin of the type-I emission in doped devices. This observation opens the way for a new characterization scheme where a “dummy” RTD active element is incorporated below the real RTD structure. This structure allows significantly greater control in the epitaxial process.
We discuss the numerical simulation of high current density InGaAs/AlAs/InP resonant tunneling diodes with a view to their optimization for application as THz emitters. We introduce a figure of merit based upon the ratio of maximum extractable THz power and the electrical power developed in the chip. The aim being to develop high efficiency emitters as output power is presently limited by catastrophic failure. A description of the interplay of key parameters follows, with constraints on strained layer epitaxy introduced. We propose an optimized structure utilizing thin barriers paired with a comparatively wide quantum well that satisfies strained layer epitaxy constraints.
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