Quantum dots infrared photodetector (QDIP) has found important applications due to its many advantages, such as long effective carrier life, low dark current, high operating temperature, facile preparation and low cost. In recent years, infrared photodetectors consisting of PbS and HgTe colloidal quantum dots (CQDs) have reported breakthroughs in the detection of short-wave infrared (SWIR) and mid-wave infrared (MWIR) demonstrating detectivity of 1×1013 Jones and 1×1011 Jones, respectively. However, these materials contain Pb and Hg elements, which are harmful to human and the environment. Therefore, the development of non-toxic quantum dot materials is highly desirable for QDIP. In this work, Ag2Se CQDs were studied for use in infrared photodetector. The novel CQDs have the advantages of low toxicity, good infrared optical properties, which can obtain adjustable infrared absorption due to its small bulk band gap of 0.15 eV, and biocompatibility etc. The Ag2Se CQDs were prepared by hot injection method and were characterized by Transmission Electron Microscope (TEM), X-ray Diffraction (XRD), Fourier Transform Infrared spectrum (FTIR), Atomic Force Microscope (AFM) and X-ray Photoelectron Spectroscopy (XPS). These Ag2Se CQDs demonstrated good monodispersion, size uniformity and crystallization. Interestingly, the exciton peak appeared in the infrared band of 3-4 μm. Subsequently, Ag2Se CQDs photodetector was produced by spin coating the CQDs onto a 5 μm interdigital electrode. The device exhibited a low dark current of 1.3×10-6 mA with responsivity of 5 A/W and detectivity of 1.5×1013 Jones. The results of this work show that Ag2Se CQDs are expected to have potential applications in QDIP.
Photodetectors convert optical signals into electrical signals and have found many important applications ranging from environmental monitoring to communication systems. At present, most photodetectors are based on either bulk materials or epitaxially grown materials (such as InSb and HgCdTe), which limit its widespread applications due to relatively high fabrication cost. However, photodetector based on organic polymer/colloidal quantum dots (CQDs) can provide a low-cost alternative. In this paper, a broadband photodetector consisting of organic polymer phenyl-c61-butyric acid methyl ester (PCBM) and PbS CQDs was fabricated. Combining the advantages of PbS CQDs and organic polymer PCBM, the device demonstrated good spectral response ranging from the UV to the NIR with a maximum responsivity and detectivity of 0.3 A/W and 6.6 × 1011 Jones, respectively, under illumination of 850 nm incident light. The device can be fabricated on almost any substrate due to the solution-processibility of CQDs. Furthermore, the use of organic polymer substrate can significantly reduce the cost of device and broaden its applications (such as in flexible electronics). This work provides a simple and efficient strategy to fabricate photodetector that exhibits multi-band response at relatively low-cost.
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