Alternative patterning solutions, such as spacer-based pitch splitting, have been a cornerstone of advanced technology nodes to enable device scaling. The greatest utility comes from the ability to self-align a pitch splitting process; however, traditional spacer-based patterning techniques require the deposition and etch of multiple materials, which reduce throughput and increase manufacturing costs. Anti-spacer technology, on the other hand, enables both self-aligned pitch splitting and high throughput via a single pass track-based process. We will describe the advancement of 193i anti-spacer technology to pattern trench dimensions beyond the critical dimension resolution of single-print extreme ultraviolet lithography and the utility of combining anti-spacer patterning with litho-freeze-litho-etch to enable the formation of sub-20-nm slot contact features for a minimum tip-to-tip (T2T) cut, with a roadmap to achieve sub-12 nm. A through process performance evaluation was conducted to further the understanding of fundamental process parameters and their associated effects on anti-spacer roughness and critical dimension uniformity. Such variables include photoresist, developer optimization, and overcoat dissolution. At pitches varying from 50 to 80 nm, we have demonstrated narrow trench widths down to 11.8 nm, which corresponds to the critical T2T dimension. Through hardmask etch transfer, we observe a 56% improvement in unbiased space width roughness and pitch-walking below 0.3 nm at 60-nm pitch.
This work will describe the advancement of 193i anti-spacer technology to resolve critical trench dimensions beyond the resolution of single print EUV lithography. A through process performance evaluation will be provided for 13nm trench features from 100nm to 60nm pitch and below. A cursory review of sub-13nm feature scaling and the material factors to enable such trench dimensions will be described. The extension of 193i chemistry and associated layers to intercept EUV patternability requires an understanding of fundamental process parameters and process windows beyond standard practices. Herein, a full study of key anti-spacer parameters and their associated effects on roughness and CDU will be provided. Such variables will include resist film thickness, developer optimization and overcoat dissolution. Lastly, we will outline the ultimate scaling potential of the defined 193i anti-spacer flow and provide future avenues of development to achieve greater scaling at EUV and towards High NA EUV dimensions.
Alternative patterning solutions, such as litho-freeze-litho-etch (LFLE) and spacer-based pitch splitting, have been a cornerstone of advanced technology nodes to enable device scaling. The greatest utility comes from the ability to self-align a pitch splitting process; however, traditional spacer-based patterning techniques require the deposition and etch of multiple materials, which reduce throughput and increase manufacturing costs. Anti-spacer technology, on the other hand, enables both self-aligned pitch splitting and high throughput via a single pass track-based process. Here, we present the utility of combining a 193nm immersion anti-spacer process with LFLE to enable the formation of sub-20nm slot contact features for a minimum tip-to-tip cut, with a scaling path to achieve sub-12nm cuts.
In semiconductor manufacturing, thousands of process steps are required to produce an integrated circuit (IC) chip; each with a uniformity signature that impacts yield. Typically, non-uniformities can be minimized by tuning process conditions. However, even after extensive process optimization, there’s often a residual signature that needs to be removed. The Z-Height chemistry and hardware set applies a spatial correction aimed at removing these residuals and improving planarity. The pitch doubled self-aligned block (SAB) approach of patterning sub-resolution metal lines is one such integration that benefits from this correction method by improving the block height uniformity to ensure proper pattern transfer and a wider process window. In this paper, we will discuss the approach to correct for the thickness non-uniformities induced by the spin-coating and etch processes of a spin-on glass film. Initial results show a 36% improvement in film thickness variation.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.