Progressive mask defects are a critical mask-reliability issue in DUV lithography. It is well known that the
majority of the defects are ammonium sulfates. We have found using ToF-SIMS that metallic atoms are localized at
ammonium-sulfate defects on the mask surface, can influence the growth of the defects. Carbon compounds containing
nitrogen atoms are also localized at the some defects. These carbon compounds are the result of the adsorption of organic
volatiles outgassing from a reticle SMIF pod. Metal residues and organic contamination on a photomask as well as
airborne acidic and basic contamination must be controlled to avoid progressive defects on photomasks.
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