Dr. Kenji Honda Profile

Dr. Kenji Honda

Technical Director at Toshiba Corp

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Publications (12)

Proceedings Article | 13 March 2015 Paper

2.2um BSI CMOS image sensor with two layer photo-detector

H. Sasaki, A. Mochizuki, Y. Sugiura, R. Hasumi, K. Eda, Y. Egawa, H. Yamashita, K. Honda, T. Ohguro, H. Momose, H. Ootani, Y. Toyoshima, T. Asami

Proceedings Volume 9403, 940302 (2015) https://doi.org/10.1117/12.2077122

KEYWORDS: Signal to noise ratio, Optical filters, CMOS sensors, Sensors, Metals, Silicon, Quantum efficiency, Signal processing, Ion implantation, Signal detection

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Proceedings Article | 3 May 2004 Paper

Design rule optimization for 65-nm-node (CMOS5) BEOL using process and layout decomposition methodology

K. Honda, K. Peter, Y. Zhang, B. Yu, K. Park, Xiaolei Li, K. Michaels, Shinichi Yamada, T. Noguchi

Proceedings Volume 5379, (2004) https://doi.org/10.1117/12.544234

KEYWORDS: Logic, Diffractive optical elements, Metals, Resistance, Scanning electron microscopy, Very large scale integration, Photomasks, Optical proximity correction, Structural design, Back end of line

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With downscaling of dimensions, essential challenges on layout printability significantly increase. The design rule cannot be shrunk with linearity any more. Historically, in the early development stage, simple test patterns like snake/comb or border/borderless via chains were used for identifying design and process issues electrically. However it is unclear how much these patterns represent the sensitive patterns for the real critical failures. The lack of these kinds of critical patterns would always cause yield problems in the volume production. In this paper, we show the result of evaluating 65-nm BEOL process by using the test patterns that can cover critical layout situations. Especially, it was focused on the line end via hole, which is believed to cause the systematic yield degradation. The key steps in our process/design decomposition methodology are design attribute and process space analysis. By exploring the process space for a given design, the method allows to find the most challenging patterns to print due to various process issues. The test patterns were generated from critical pattern extracted from standard cells library by considering our preliminary opc and mask design flow. Simulation of all test patterns are performed to ensure that DOE range is sufficient to cover the entire process/design space. These patterns are generated from the 65nm node ground design rule. It used a size of 90nm as metal minimum width and space, and a size of 100nm for fixed via hole diameter. It was confirmed by simulations that all the test pattern represent for the original design on each module process/design space. All the test patterns were measured by the standard parametric e-test setup. The amount of line end pull back can be inferred from the via resistance, and the amount of line end widening can be inferred from the leakage current between via chains and neighboring lines. Thus the meaningful information about the OPC and litho process can be obtained quickly without extensive use of SEM measurements. More than 200 test patterns considering logic randomness were designed and fabricated by using 65-nm node BEOL process. We found that 50nm or more line extension is necessary to suppress the pull back issue caused by the defocus effect. To prevent the metal short of the isolated pattern next to or surrounding by the wide metal, the minimum space with wide neighboring metal was defined. Using this methodology, our 65-nm design rule has been successfully evaluated and optimized.

Proceedings Article | 24 July 2002 Paper

Fluorocarbon-based single-layer resist for 157-nm lithography

Ki-Yong Song, Kwang-Sub Yoon, Sang-Jun Choi, Sang-Gyun Woo, Woo-Sung Han, Jae-Jun Lee, Sang-Kyun Lee, Chang-Ho Noh, Kenji Honda

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474248

KEYWORDS: Lithography, Transparency, Etching, Polymers, Resistance, Carbonates, Photoresist materials, Absorbance, Systems modeling, Plasma

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Proceedings Article | 24 July 2002 Paper

Novel alicyclic polymers having 7,7-dimethyloxepan-2-one acid labile groups for ArF lithography

Jae-Jun Lee, Jin-Baek Kim, Kenji Honda

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474206

KEYWORDS: Lithography, Polymers, Spectroscopy, Ultraviolet radiation, Silicon, Photoresist materials, Polymerization, Semiconducting wafers, Information operations, Chemically amplified resists

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Proceedings Article | 24 August 2001 Paper

Novel deep UV photoresist with thermally crosslinkable photoacid generator

Chang-Ho Noh, Sang-Kyun Lee, Bongsuk Moon, Kenji Honda

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436886

KEYWORDS: Lithography, Deep ultraviolet, Polymers, Image processing, Chemistry, Carbonates, Photoresist materials, Photomasks, Line edge roughness, Binary data

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Proceedings Article | 16 May 1994 Paper

Interaction of novolak oligomers with hydrogen bond acceptors

Tung-Feng Yeh, Jian Huang, Arnost Reiser, Kenji Honda, Bernard Beauchemin, Rodney Hurditch

Proceedings Volume 2195, (1994) https://doi.org/10.1117/12.175379

KEYWORDS: Carbon, Calibration, Spectroscopy, Molecules, Hydrogen, Infrared spectroscopy, Deconvolution, Absorbance, Molecular interactions, Absorption

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Proceedings Article | 16 May 1994 Paper

Dissolution behavior of the chemically modified polyvinylphenol with introduced high-ortho structure

Kenji Honda, Sydney Slater, Bernard Beauchemin, Medhat Toukhy, Sobhy Tadros, Toshiaki Aoai, Yasumasa Kawabe

Proceedings Volume 2195, (1994) https://doi.org/10.1117/12.175367

KEYWORDS: Carbon, Lithography, Polymers, Spectroscopy, Hydrogen, Diffusion, Coating, Chemistry, Magnetism, Liquids

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Proceedings Article | 15 September 1993 Paper

Physical and chemical factors governing dissolution of novolak resin films

Kenji Honda, Andrew Blakeney, Rodney Hurditch, Shiro Tan, Tadayoshi Kokubo

Proceedings Volume 1925, (1993) https://doi.org/10.1117/12.154752

KEYWORDS: Semiconductors, Polymers, Spectroscopy, Hydrogen, Diffusion, Chemistry, Photoresist materials, Polymerization, Photoresist developing, Absorption

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Proceedings Article | 15 September 1993 Paper

Mechanism of dissolution inhibition in phenolic resins

Chen-Chy Lin, Tung-Feng Yeh, Arnost Reiser, Kenji Honda, Bernard Beauchemin

Proceedings Volume 1925, (1993) https://doi.org/10.1117/12.154806

KEYWORDS: Semiconductors, Molecules, Ions, Diffusion, Transform theory, Photoresist materials, Solids, Microelectronics, Molecular interactions, Absorption

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Proceedings Article | 1 June 1992 Paper

Studies of dissolution inhibition mechanism of DNQ novolak resists: part III--secondary inhibition with quaternary ammonium salts in development process

Kenji Honda, Bernard Beauchemin, Rodney Hurditch, Andrew Blakeney, Tadayoshi Kokubo

Proceedings Volume 1672, (1992) https://doi.org/10.1117/12.59760

KEYWORDS: FT-IR spectroscopy, Quartz, Polymers, Spectroscopy, Ultraviolet radiation, Hydrogen, Chemistry, Absorbance, Picture Archiving and Communication System, Absorption

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Proceedings Article | 1 June 1991 Paper

Studies of dissolution inhibition mechanism of DNQ-novolak resist (II): effect of extended ortho-ortho bond in novolak

Kenji Honda, Bernard Beauchemin, Edward Fitzgerald, Alfred Jeffries, Sobhy Tadros, Andrew Blakeney, Rodney Hurditch, Shiro Tan, Shinji Sakaguchi

Proceedings Volume 1466, (1991) https://doi.org/10.1117/12.46365

KEYWORDS: Lithography, FT-IR spectroscopy, Polymers, Spectroscopy, Hydrogen, Photoresist materials, Solids, Polymerization, Molecular interactions, Picture Archiving and Communication System

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Proceedings Article | 1 June 1990 Paper

Studies of the molecular mechanism of dissolution inhibition of positive photoresists based on novolac-DNQ

Kenji Honda, Bernard Beauchemin, Rodney Hurditch, Andrew Blakeney, Yasumasa Kawabe, Tadayoshi Kokubo

Proceedings Volume 1262, (1990) https://doi.org/10.1117/12.20104

KEYWORDS: Polymers, Molecules, Hydrogen, Photoresist materials, Solids, Chemical reactions, Molecular mechanisms, Molecular interactions, Semiconducting wafers, Picture Archiving and Communication System

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Showing 5 of 12 publications

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