Dr. Julien Brault Profile

Dr. Julien Brault

Head of Research Team at CRHEA

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Author

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Publications (18)

Proceedings Article | 9 March 2024 Presentation

Presentation

Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Yvon Cordier, Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Eric Frayssinet, Stéphane Vézian

Proceedings Volume PC12886, PC128860N (2024) https://doi.org/10.1117/12.3007453

KEYWORDS: Transistors, Aluminum gallium nitride, Vacuum, Silicon nitride, Silicon, Oxides, Heterojunctions, Gallium nitride, Field effect transistors, Fabrication

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Proceedings Article | 21 March 2023 Presentation

Presentation

Porous (In)GaN made by combining nanomasking and sublimation: from material properties to LEDs

Benjamin Damilano, Stéphane Vézian, Nuño Amado-Mendez, Marie-Pierre Chauvat, Virginie Brändli, Sébastien Chenot, Aimeric Courville, Julien Brault, Pierre Valvin, Magali Morales, Pierre Ruterana, Bernard Gil, Maria Tchernycheva

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2648957

KEYWORDS: Light emitting diodes, Gallium nitride, Indium gallium nitride, Semiconductors, Refractive index, Reflectivity, Molecular beam epitaxy, Luminescence, Interfaces, Doping

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Proceedings Article | 5 March 2021 Presentation + Paper

Presentation + Paper

DUV LEDs based on AlGaN quantum dots

Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter, Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, Bernard Gil

Proceedings Volume 11686, 116860T (2021) https://doi.org/10.1117/12.2576135

KEYWORDS: Light emitting diodes, Quantum dots, Deep ultraviolet, Ultraviolet radiation, Ultraviolet light emitting diodes, Transmission electron microscopy, Structural design, Scanning electron microscopy, Ranging, Quantum optics

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Proceedings Article | 21 August 2020 Presentation

Presentation

Plateau-like broadband ultraviolet emission from GaN quantum dots formed on multiple facets

Jong-Hoi Cho, Seung-Hyuk Lim, Min-Ho Jang, Chulwon Lee, Hwan-Seop Yeo, Young Chul Sim, Je-Hyung Kim, Samuel Matta, Seoung-Hwan Park, Julien Brault, Yong-Hoon Cho

Proceedings Volume 11466, 1146603 (2020) https://doi.org/10.1117/12.2570858

KEYWORDS: Ultraviolet radiation, Gallium nitride, Quantum dots, Light emitting diodes, Semiconductors, Mercury, Xenon, Ultraviolet light emitting diodes, Spectrophotometry, Sapphire

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SPIE Journal Paper | 18 May 2018

Loss analysis in nitride deep ultraviolet planar cavity

Zhongming Zheng, Yingqian Li, Onkundi Paul, Hao Long, Samuel Matta, Mathieu Leroux, Julien Brault, Leiying Ying, Zhiwei Zheng, Baoping Zhang

JNP, Vol. 12, Issue 04, 043504, (May 2018) https://doi.org/10.1117/12.10.1117/1.JNP.12.043504

KEYWORDS: Deep ultraviolet, Interfaces, Vertical cavity surface emitting lasers, Scattering, Optical microcavities, Reflectivity, Gallium, UV optics, Quantum dots, Laser scattering

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Proceedings Article | 14 March 2018 Presentation

Presentation

III-nitride on silicon microdisks: electrical injection and bus waveguide side-coupling (Conference Presentation)

Farsane Tabataba-Vakili, Iännis Roland, Stéphanie Rennesson, Eric Frayssinet, Julien Brault, Moustafa El Kurdi, Xavier Checoury, Bruno Paulillo, Raffaele Colombelli, Thierry Guillet, Christelle Brimont, Benjamin Damilano, Fabrice Semond, Bruno Gayral, Philippe Boucaud

Proceedings Volume 10532, 105321K (2018) https://doi.org/10.1117/12.2289556

KEYWORDS: Waveguides, Silicon, Nanophotonics, Microresonators, Laser sources, Optical pumping, Electroluminescence, Quantum wells, Ultraviolet radiation, Integrated circuit design

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Proceedings Article | 14 March 2018 Presentation

Presentation

Selective area sublimation of GaN for top-down fabrication of nanostructures (Conference Presentation)

Benjamin Damilano, Stéphane Vézian, Sébastien Chenot, Marc Portail, Blandine Alloing, Julien Brault, Aimeric Courville, Virginie Brändli, Mathieu Leroux, Jean Massies

Proceedings Volume 10532, 105320F (2018) https://doi.org/10.1117/12.2291935

KEYWORDS: Gallium nitride, Nanostructures, Nanowires, Indium gallium nitride, Nanolithography, Silicon, Quantum wells

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Proceedings Article | 20 February 2018 Paper

Paper

Ultra-violet avalanche photodiode based on AlN/GaN periodically-stacked-structure

Xingzhao Wu, Jiyuan Zheng, Lai Wang, Julien Brault, Samuel Matta, Zhibiao Hao, Changzheng Sun, Bing Xiong, Yi Luo, Yianjun Han, Jian Wang, Hongtao Li, Mohamed Khalfioui, Mo Li, Jianbin Kang, Qian Li

Proceedings Volume 10697, 106972M (2018) https://doi.org/10.1117/12.2315656

KEYWORDS: Avalanche photodetectors, Ionization, Aluminum nitride, Avalanche photodiodes, Ultraviolet radiation, Gallium nitride, Signal detection, Scattering

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Proceedings Article | 21 November 2017 Open Access

Open Access

Paper

Status of AlGaN based focal plane array for near UV imaging and strategy to extend this technology to far-UV by substrate removal

Jean-Luc Reverchon, Yves Gourdel, Jean-Alexandre Robo, Jean-Patrick Truffer, Eric Costard, Julien Brault, Jean-Yves Duboz

Proceedings Volume 10566, 105662P (2017) https://doi.org/10.1117/12.2308214

KEYWORDS: Ultraviolet radiation, Staring arrays, Etching, Silicon, Cameras, Sapphire, Readout integrated circuits, Deep ultraviolet, Gallium nitride, Near ultraviolet

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Proceedings Article | 13 March 2015 Paper

Paper

Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates

Julien Sellés, Daniel Rosales, Bernard Gil, Guillaume Cassabois, Thierry Guillet, Julien Brault, Benjamin Damilano, Philippe Vennéguès, Philippe de Mierry, Jean Massies

Proceedings Volume 9363, 93630Z (2015) https://doi.org/10.1117/12.2076284

KEYWORDS: Luminescence, Gallium nitride, Quantum dots, Polarization, Crystals, Optical properties, Ranging, Photons, Temperature metrology, Molecular beam epitaxy

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Proceedings Article | 8 March 2014 Paper

Paper

Monolithic white light emitting diodes using a (Ga,In)N-based light converter

Benjamin Damilano, Kaddour Lekhal, Hyonju Kim-Chauveau, Sakhawat Hussain, Eric Frayssinet, Julien Brault, Sébastien Chenot, Philippe Vennéguès, Philippe De Mierry, Jean Massies

Proceedings Volume 8986, 89861G (2014) https://doi.org/10.1117/12.2037589

KEYWORDS: Light emitting diodes, Indium gallium nitride, Quantum wells, Metalorganic chemical vapor deposition, Gallium nitride, Electroluminescence, Sapphire, Internal quantum efficiency, Silicon, Molecular beam epitaxy

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Proceedings Article | 8 March 2014 Paper

Paper

Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs

Julien Brault, Benjamin Damilano, Aimeric Courville, Mathieu Leroux, Abdelkarim Kahouli, Maxim Korytov, Philippe Vennéguès, Gaetano Randazzo, Sébastien Chenot, Borge Vinter, Philippe De Mierry, Jean Massies, Daniel Rosales, Thierry Bretagnon, Bernard Gil

Proceedings Volume 8986, 89860Z (2014) https://doi.org/10.1117/12.2036924

KEYWORDS: Gallium nitride, Nanostructures, Light emitting diodes, Electroluminescence, Nanolithography, Transmission electron microscopy, Ultraviolet radiation, Quantum wells, Optical properties, Scanning electron microscopy

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Proceedings Article | 3 October 2011 Paper

Paper

Performances and reliability tests of AlGaN based focal plane array for deep-UV imaging

J.-L. Reverchon, G. Lehoucq, C. Lyoret, J.-P. Truffer, E. Costard, E. Frayssinet, J. Brault, J.-Y. Duboz, A. Giuliani, M. Réfrégier, M. Idir

Proceedings Volume 8176, 817619 (2011) https://doi.org/10.1117/12.898341

KEYWORDS: Staring arrays, Quantum efficiency, Deep ultraviolet, Silicon, Etching, Photodiodes, Doping, Imaging systems, Absorption, Semiconducting wafers

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Proceedings Article | 8 May 2010 Paper

Paper

Performances of AlGaN-based focal plane arrays from 10nm to 200nm

J.-L. Reverchon, S. Bansropun, J.-P. Truffer, E. Costard, E. Frayssinet, J. Brault, J.-Y. Duboz, A. Giuliani, M. Idir

Proceedings Volume 7691, 769109 (2010) https://doi.org/10.1117/12.853947

KEYWORDS: Staring arrays, Sapphire, Silicon, Deep ultraviolet, Quantum efficiency, Cameras, Ultraviolet radiation, Aluminum nitride, Gallium nitride, Packaging

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Proceedings Article | 23 September 2009 Paper

Paper

First demonstration and performance of AlGaN based focal plane array for deep-UV imaging

J.-L. Reverchon, S. Bansropun, J. Robo, J. Truffer, E. Costard, E. Frayssinet, J. Brault, F. Semond, J. Duboz, M. Idir

Proceedings Volume 7474, 74741G (2009) https://doi.org/10.1117/12.830287

KEYWORDS: Silicon, Quantum efficiency, Staring arrays, Deep ultraviolet, Etching, Sapphire, Absorption, Photodiodes, Sensors, Dry etching

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Proceedings Article | 26 October 2007 Paper

Paper

AlGaN-based focal plane arrays for selective UV imaging at 310nm and 280nm and route toward deep UV imaging

Jean-Luc Reverchon, Jean-Alexandre Robo, Jean-Patrick Truffer, Jean-Pascal Caumes, Idir Mourad, Julien Brault, Jean-Yves Duboz

Proceedings Volume 6744, 674417 (2007) https://doi.org/10.1117/12.754794

KEYWORDS: Staring arrays, Ultraviolet radiation, Deep ultraviolet, Photodiodes, Quantum efficiency, Sensors, Aluminum, Gallium nitride, Multiplexers, Metals

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Proceedings Article | 16 June 2004 Paper

Paper

Optical characteristics of hexagonal and cubic GaN self-assembled quantum dots

Yong Hoon Cho, B. J. Kown, Julien Barjon, J. Brault, B. Daudin, Henri Mariette, Le Dang

Proceedings Volume 5352, (2004) https://doi.org/10.1117/12.526103

KEYWORDS: Gallium nitride, Aluminum, Gallium, Waveguides, Optical properties, Absorption, Quantum wells, Heterojunctions, Quantum dots, Ultraviolet radiation

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Proceedings Article | 23 January 2003 Paper

Paper

Polarized front-illumination response in quantum dot infrared photodetectors

Gad Bahir, Elieser Finkman, S. Schacham, J. Brault, M. Gendry

Proceedings Volume 4820, (2003) https://doi.org/10.1117/12.451328

KEYWORDS: Quantum dots, Quantum well infrared photodetectors, Polarization, Sensors, Absorption, Infrared radiation, Photodetectors, Electrons, Phonons, Indium arsenide

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Showing 5 of 18 publications

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