Dr. Jochen Schacht Profile

Dr. Jochen Schacht

at Siemens EDA

SPIE Involvement:

Author

Publications (5)

Proceedings Article | 13 March 2012 Paper

Can fast rule-based assist feature generation in random-logic contact layout provide sufficient process window?

Ahmed Omran, George Lippincott, Jochen Schacht, Junjiang Lei, Le Hong, Loran Friedrich, Regina Shen, Ryan Chou

Proceedings Volume 8326, 83261P (2012) https://doi.org/10.1117/12.915787

KEYWORDS: SRAF, Optical proximity correction, Logic, Fiber optic illuminators, Printing, Photomasks, Visualization, Lithography, Manufacturing, Resolution enhancement technologies

Read Abstract +

Proceedings Article | 13 March 2009 Paper

Implementing a framework to generate a unified OPC database from different EDA vendors for 45nm and beyond

Shady Abdelwahed, Mohamed Al-Iman, Rami Fathy, Nader Hindawy, Jochen Schacht, Regina Shen, Chia Wei Huang, Pei Ru Tsai, Te Hung Wu, Chuen Huei Yang

Proceedings Volume 7275, 72751O (2009) https://doi.org/10.1117/12.816281

KEYWORDS: Optical proximity correction, Electronic design automation, Photomasks, Semiconducting wafers, Data modeling, SRAF, Visualization, Wafer-level optics, Databases, Lithography

Read Abstract +

Proceedings Article | 13 March 2009 Paper

The PIXBAR OPC for contact-hole pattern in sub-70-nm generation

KunYuan Chen, ChunCheng Liao, ShuHao Chen, Todd Wey, Phoeby Cheng, Pinjan Chou, Jochen Schacht, Dyiann Chou, Srividya Jayaram

Proceedings Volume 7275, 72750Z (2009) https://doi.org/10.1117/12.813985

KEYWORDS: Optical proximity correction, Semiconducting wafers, Atrial fibrillation, Photomasks, Autoregressive models, Reticles, Electroluminescence, Lithography, Model-based design, Manufacturing

Read Abstract +

Proceedings Article | 4 December 2008 Paper

Image parameter-based scatter bar optimization

Ryan Chou, Li-Tung Hsiao, H. Y. Liao, Jack Lin, Regina Shen, Jochen Schacht, Dyiann Chou, Srividya Jayaram, Pat LaCour

Proceedings Volume 7140, 71402E (2008) https://doi.org/10.1117/12.804707

KEYWORDS: Printing, Optical proximity correction, Model-based design, Critical dimension metrology, Lithography, Optimization (mathematics), Manufacturing, SRAF, Resolution enhancement technologies, Semiconducting wafers

Read Abstract +

Scatter Bar (SBAR) insertion is a computationally expensive operation. SBAR are usually generated rule-based. SBAR rule tables dictate the insertion of SBAR with different SBAR width dependent on the width of the printable main features and the spacing between the main features and SBAR. Optimization of the SBAR rules drives manufactures to ever more complex SBAR tables which increase the runtime. In advanced process nodes, SBAR printing issues, missing SBAR due to clean-up problems and joining SBAR of different width together remain challenging. On the other hand, pixelized inversion methods may yield optimized SBAR solutions, especially in terms of SBAR placement for contact layers, but comes at the expense of significant computational effort and increased mask writing and inspection time. Since OPC changes the spacing between SBAR and main features, an accurate and optimized SBAR solution requires OPC and SBAR optimization to run interactively. This work focuses on both line/space and contact layers To ensure fast SBAR optimization, SBAR placement and SBAR width optimization are separated. SBAR of uniform width are placed fast driven by a simple rule-based table comprising only a single SBAR width. This intermediate SBAR layer is subject into a model-based approach, which fragments the SBAR layer based on proximity with respect to the main features or other SBAR, and assigns measurement sites to each SBAR fragment. A model is used to move each SBAR fragment inward or outward so that the image cut line shows a maximum SBAR intensity closer to a predefined SBAR printing threshold. While the main features are unchanged, several iterations are applied to converge the SBAR fragments. Keeping the SBAR fragments fixed, OPC is applied to the main features. Repeating these steps allows optimization of the SBAR width and the OPC simultaneously. Site based as well as contours based verification methods are applied to ensure that the SBAR printing margin has been significantly improved. The improved SBAR printing margin allows manufactures to apply more aggressive SBAR placement rules, which, in addition to the optimized SBAR width, helps to enlarge the depth of focus, therefore, widen the common process window of the lithography process.

Proceedings Article | 24 March 2008 Paper

A novel methodology for model-based OPC verification

Tengyen Huang, ChunCheng Liao, Ryan Chou, Hung-Yueh Liao, Jochen Schacht

Proceedings Volume 6922, 69222F (2008) https://doi.org/10.1117/12.772522

KEYWORDS: Optical proximity correction, Scanning electron microscopy, Process modeling, Data modeling, Semiconducting wafers, Lithography, Optical lithography, Calibration, Finite element methods, Model-based design

Read Abstract +

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years