In this paper, we present a rigorous simulation engine for DSA chemo-epitaxy patterning processes. The model can be utilized to predict the post-process patterns for line space and hexagonal hole layouts. Traditional pitch-split and EUV pattern rectification process integration schemes are simulated. The model output for Line Edge Roughness (LER) and Pattern Placement Error (PPE) is compared to the experimental results. Finally, we will explore how to enable DSA-aware process-compliant designs, taking into account cut-mask considerations in the context of design rules.
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