UVC LEDs are of fundamental importance for many applications, including sterilization and disinfection, thanks to their high efficiency and low environmental impact. However, several physical processes still limit the lifetime and reliability of these devices. We present recent case studies in the field of UVC LED reliability. Initially, we review the performance/efficiency of state-of-the-art commercial devices, and discuss the issues related to LED self-heating, and the related electro-optical transient behavior. Then, we discuss the impact of defects on LED degradation, based on combined deep-level transient spectroscopy (DLTS) and deep-level optical spectroscopy (DLOS) measurements, and Technology Computer-Aided Design (TCAD) simulations. We show that, during prolonged operation, UVC LEDs can show considerable changes in the electrical characteristics: a) an increase in the sub-turn on leakage, that can be reproduced by TCAD as due to an increase in trap-assisted tunneling, related to deep traps located in the interlayer between the last barrier and the EBL; b) an increase in the turn-on voltage, that is explained by the degradation of the metal/p-GaN contact, due to a decrease in the active magnesium concentration. Electro-optical measurements reveal that a stronger degradation is detected at low measuring current levels, confirming an important role of defect-mediated recombination. Remarkably, degradation kinetics do not follow an exponential trend, but can be fitted by using the Hill’s formula. A higher Mg doping in the EBL mitigates the degradation rate. Results are interpreted by considering that degradation is due to the de-hydrogenation of point defects, which increases the density of non-radiative recombination centers.
This presentation will provide an overview of the state-of-the-art in the development of AlGaN-based far-UVC-LED technologies. We will explore origins for the observed decline in the external quantum efficiency (EQE) with decreasing emission wavelength and present different approaches to improve the RRE, CIE, and LEE of UV light emitters. We will also discuss design aspects for far-UVC irradiation systems and provide an outlook of future prospects of far-UVC-LED device technology as well as the potential for a wider use of far-UVC sources in applications like room air disinfection.
Electrical and optical excitation of the active region of a UVB LED chip was combined while imaging its in-plane lateral light emission by a UV camera. This made it possible to distinguish between spatial distribution in current density and in efficiency of radiative recombination of charge carriers. It is demonstrated that the degradation of the active region is more prominent in the areas where the local current density increased throughout the long-term operation. It will be shown how the spatial intensity distributions in UVB and UVC LEDs are affected by the operation current, chip design, and mesa edges.
Light emitting diodes in the deep ultraviolet spectral range (DUV-LEDs) are of great interest for monitoring gases, pollutants in water as well as the in-vivo inactivation of multi-drug-resistant bacteria. This paper reviews advances in development of AlGaN-based DUV-LEDs, including the realization of low defect density AlN on sapphire. DUV-LEDs near 230 nm with output powers of more than 3 mW will be demonstrated and the root causes for the efficiency drop at shorter UV wavelength will be explored, including changes in the polarization of light emission, the role of point defects as well as carrier injection in AlGaN MQWs.
Recent advances in optimizing the efficiency and lifetime of far-UVC LEDs with emission wavelengths below 240 nm are presented. The design of the semiconductor heterostructure is considered as well as the chip layout. Cross-comparisons are used to draw general conclusions about degradation mechanisms in UV LEDs and to identify development strategies to minimize them. Furthermore, it is discussed which chip packaging is particularly suitable for a combination of far-UVC LEDs with spectral filters. Finally, far-UVC irradiation systems for skin-friendly irradiation of the human body are presented and their performance is illustrated with selected medical and biological data.
Far-UVC LEDs are interesting for applications such as skin-tolerant inactivation of multiresistant pathogens and gas sensing. We present the development of 233 nm AlGaN-based far-UVC LEDs with an emission power of 3 mW at 200 mA and L50 lifetime of more than 1000 h, after burn-in. Additionally, the design of a far-UVC LED-based irradiation system, with a spectral filter which supresses emission >240 nm, to study the inactivation of bacteria and skin compatibility of the radiation will be presented. The system can be used to homogeneously irradiate a target area of 70 mm diameter with a mean irradiance of 0.4 mW/cm².
Driven by applications like monitoring of combustion engines, toxic gases, nitrates in water, as well as the inactivation of multi-drug-resistant germs, the development of AlGaN-based light emitting diodes in the deep ultraviolet spectral range (DUV-LEDs) has markedly intensified. This paper will provide a review of recent advances in development of DUV-LEDs, including the realization of low defect density AlGaN heterostructures on sapphire substrates. The performance characteristics of DUV LEDs emitting in the wavelength range between 260 nm and 217 nm will be discussed and milli-Watt power LEDs near 233 nm will be demonstrated.
The development of efficient (In)AlGaN light emitting diodes (LEDs) in the ultraviolet B (UVB) spectral region (280nm-320nm) is essential due to their vast commercial potential. UVB LEDs are expected to not only replace traditional mercury lamps in applications such as curing of materials and phototherapy but also to establish new applications in the fields of plant growth and sensing. Although a lot of progress has been made on the performance of the UVB LEDs, the efficiency of the devices as well as the lifetime still needs to be improved. In this study the influence of the heterostructure design and package on the efficiency of UVB LEDs, grown by metalorganic vapor phase epitaxy on c-plane sapphire substrates, will be presented. Firstly, the performance of UVB AlGaN and InAlGaN multiple quantum well LEDs were studied and the influence of the material composition on the emission characteristics was analyzed. Secondly, the performance of LEDs with different electron blocking layer (EBL) designs and doping concentrations was compared. The highest internal quantum efficiency and emission power were obtained for LEDs with a gradient-like EBL, with decreasing aluminum content, because of the improved carrier injection. Additionally, the output power of the LEDs was found to increase with the p-doping level in the EBL. Finally, investigations on the influence of the metal contacts and insulator as well as the device packaging on the performance of UVB LEDs will be presented. Based on these optimizations, 315nm LEDs with output powers up to 10mW at 100mA were realized
UV LEDs are usually mounted in flip-chip technology by soldering or thermocompression bonding to allow the UV light to be emitted through the sapphire substrate. The thermal conductivity of solders is considerably smaller than that of the typical metals used for packaging such as Cu, Ag or Au. For thermosonic- or thermocompression bonding pure metals can be used, however, the contact area is reduced in comparison to soldered contacts. Thermal simulations with different ratios of the number and size of stud bumps to the total area illustrate the direct influence of these parameters on the thermal resistance. The deformation during the bonding process as a function of the processing temperature and the applied force is discussed together with the influence of preprocessing, e.g. coining. Approaches are presented to increase the bonding area to 70 % of the total pad area of the chip. The improvements in the thermal resistance are demonstrated by lock-in-thermography and SEM investigations.
The aim of this work is to analyze the degradation in (In)AlGaN-based UV-B LEDs, with a nominal emission wavelength of 310 nm, submitted to constant current stress at a high current density of 350 A/cm2. We observed two main degradation mechanisms that were studied by investigating the evolution of the main emission peak from the quantum well (QW) and of a parasitic peak centered at 340 nm. In the first 50 hours of stress the main peak decreases and the parasitic peak (probably related to radiative recombination in the quantum barrier next to the electron blocking layer) increases at drive currents between 5 mA and 50 mA. Secondly, after 50 hours of stress both the main and the parasitic peak decrease. The first degradation mode could be related to carrier escape from the QWs, since the increase in the parasitic peak is correlated with the decrease in the main peak. After 50 hours of stress, we observed that the current below the turn-on voltage at V = 2 V increases with a square-root of time dependence. This behavior indicates the presence of a diffusion process, probably by point defects causing an increase of non-radiative recombination in the LED.
The paper reports the analysis of (In)AlGaN-based UV-B LEDs degradation under constant current stress, and investigates the impact of defects in changing the devices electro-optical performance. The study is based on combined electro-optical characterization, deep-level transient- (DLTS) and photocurrent spectroscopy. UV-B LEDs show a decrease of the optical power during stress, more pronounced at low measuring current levels, indicating that the degradation is related to an increase of Shockley-Read-Hall (SRH) recombination. DLTS measurements allowed the identification of three defects, in particular one ascribed to Mg-related acceptor traps presence. Photocurrent spectroscopy allows the localization of the defects close to the mid-gap.
In this paper we report on the influence of the heterostructure design of (InAlGa)N-based UV-B LEDs grown by metalorganic vapor phase epitaxy on sapphire substrates on the degradation behavior of the device. Two types of LEDs with different heterostructure design, resulting in peak-wavelengths of about 290 nm and 310 nm, respectively, were stressed at a constant operation current of 100 mA and a heat sink temperature of 20°C. Electro-optical characterization of the LEDs over 1.000 h of operation shows two different degradation modes with respect to the change of the emission spectrum and leakage current. The first mode during the initial hours (290 nm LED: 0 h - 500 h, 310 nm LED: 0 h – 100 h) of operation is represented by a fast reduction of the quantum well (QW) luminescence, a constant or increasing parasitic luminescence between 310 nm and 450 nm and a fast increase of the reverse- and forward-bias leakage current. These changes are more pronounced (higher degradation rate) in the 290 nm LEDs and can therefore be attributed to the different heterostructure design. In contrast, the second degradation mode at longer operation times (290 nm LED: >500 h, 310 nm LED: >100 h) is marked by a slow reduction of both the QW and the parasitic luminescence, as well as a slow increase of the leakage current which are similar for both types of LEDs. Furthermore, the second mode is marked by a square-root time dependence of the QW luminescence intensity, indicating a diffusion process to be involved.
UV light emitters in the UV-B spectral range between 280 nm and 320 nm are of great interest for applications such as phototherapy, gas sensing, plant growth lighting, and UV curing. In this paper we present high power UV-B LEDs grown by MOVPE on sapphire substrates. By optimizing the heterostructure design, growth parameters and processing technologies, significant progress was achieved with respect to internal efficiency, injection efficiency and light extraction. LED chips emitting at 310 nm with maximum output powers of up to 18 mW have been realized. Lifetime measurements show approximately 20% decrease in emission power after 1,000 operating hours at 100 mA and 5 mW output power and less than 30% after 3,500 hours of operation, thus indicating an L50 lifetime beyond 10,000 hours.
Optical polarization properties of nonpolar quantum wells and their efficiency droop at high charge
carrier densities are discussed. Therefore, a photoluminescence experiment connecting both characteristics
is presented. The additional property of polarization resolution provides information
about the two lowest interband transitions and the occupation of holes in the two highest valence
subbands. The ratio of occupation in the two subbands is a direct projection of the Fermi-Dirac
statistics. Because of the carrier dependency of the Auger losses, the quantum well internal efficiency
drops in the high charge carrier regime. Here, we observe that the peak of the internal
quantum efficiency of the individual subband occurs at different excitation densities as a direct
consequence of the Fermi-Dirac statistics.
The resonator orientation of InGaN-based lasers on semipolar planes influences the optical polarization and the
gain. We present gain measurements of semipolar (11-22) laser structures with differently oriented resonators and
for various polarization states. The optical polarization state and the thresholds for lasers on different semipolar
and nonpolar orientations are compared. The experimental results are accompanied by numerical calculations of
the material gain as well as investigation of the surface morphology and resulting waveguide losses in dependence
of the crystal orientation.
Diffractive optical elements with application specific tailored properties can be fabricated by light induced alternation of
the material's refractive index. Holographic polymers or photoresists are typically used for permanent optical
structurization. Today, photostructurable media become core elements of photonic systems with innovative capabilities.
We investigate different classes of organic photosensitive materials in order to optimize the interaction between the
material and an optoelectronic system around. Some exemplary applications are microholographic data storage, 3D
nano/micro structurization, optical patterning for advanced security features. Key issues include dynamic material
response, spectral and temporal grating development, influence of the light intensity distribution, effects of pre-exposure
and post-curing, etc. Materials under investigation are cationic and free radical polymerization systems, liquid crystalline
polymer nanocomposites, and photoresist systems.
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