A series of benzo[d,d]thieno[3,2-b;4,5-b]dithiophene (BTDT) derivatives, end-functionalized with phenyl (PBTDT),
benzothiophenyl (BT-BTDT) were synthesized and characterized. A facile, one-pot synthesis of BTDT
was developed which enables the efficient realization of a new
BTDT-based semiconductor series for organic
thin-film transistors (OTFTs). The crystal structure of P-BTDT was determined via single-crystal X-ray
diffraction. Various combinations of surface treatment methods, substrate temperature, and deposition flux rate
sequences have significant effects on device performance. Films deposited on octadecyltrichlorosilane (OTS)-
treated SiO2 substrates under properly adjusted substrate temperature and deposition flux rate achieve an
efficaceous compromise between high film crystallinity and good film grain interconnectivity, resulting in good
OTFT performance, with mobility greater than 0.70 cm2V-1s-1 and Ion/Ioff greater than 108.
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