Mr. Hui Meng Profile

Hui Meng

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Proceedings Article | 25 April 2022 Paper

The evaluation of chipping on single-crystal silicon carbide (SiC) dicing machining using sintered diamond blades

Ping Wang, Mian Li, Lihua Gao, Hui Meng, Dekui Mu

Proceedings Volume 12244, 122440F (2022) https://doi.org/10.1117/12.2634895

KEYWORDS: Wafer dicing, Silicon carbide, Diamond, Abrasives, Semiconducting wafers, Diamond machining, Manufacturing

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Due to its superior bandwidth, high thermal and electrical conductivity, single-crystal SiC is becoming one of the most commonly employed third-generation wafer materials that are essential for the fabrication of powdered electronic devices. This work presents an experimental investigation on the role of processing parameters in the dicing process of silicon carbide (SiC) wafers. Metal bond diamond blades were successfully sintered and utilized to dice single-crystal SiC along with[1120] and the [1100] directions. Dicing quality was evaluated based on the average chipping size and distribution, as well as the relative Kerf defined as the ratio of kerf width to thickness of diamond blades. Single-crystal SiC diced in [1120] direction had quality better than that diced in the [1100] direction. During SiC dicing process, the chip size on the edge of the dicing groove and the relative kerf width increased with the increase of cutting depth. Increased dicing loads could result in the truncation of diamond abrasives, the smaller the difference in protrusion height, and the lower the chipping. Last but not least, the thickness was found to play a determinant role in the mechanical integrity and hence dicing capability of sintered diamond blades on SiC; the minimum thickness of sintered diamond blades was 200 microns.

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