Multiple scattering is a common phenomenon in acoustic media that arises from the interaction of the acoustic field with a network of scatterers. This mechanism is dominant in problems such as the design and simulation of acoustic metamaterial structures often used to achieve acoustic control for sound isolation, and remote sensing. In this study, we present a physics-informed neural network (PINN) capable of simulating the propagation of acoustic waves in an infinite domain in the presence of multiple rigid scatterers. This approach integrates a deep neural network architecture with the mathematical description of the physical problem in order to obtain predictions of the acoustic field that are consistent with both governing equations and boundary conditions. The predictions from the PINN are compared with those from a commercial finite element software model in order to assess the performance of the method.
In this study, we develop an end-to-end deep learning-based inverse design approach to determine the scatterer shape necessary to achieve a target acoustic field. This approach integrates non-uniform rational B-spline (NURBS) into a convolutional autoencoder (CAE) architecture while concurrently leveraging (in a weak sense) the governing physics of the acoustic problem. By utilizing prior physical knowledge and NURBS parameterization to regularize the ill-posed inverse problem, this method does not require enforcing any geometric constraint on the inverse design space, hence allowing the determination of scatterers with potentially any arbitrary shape (within the set allowed by NURBS). A numerical study is presented to showcase the ability of this approach to identify physically-consistent scatterer shapes capable of producing user-defined acoustic fields.
GaN is an attractive material for high-power electronics due to its wide bandgap and large breakdown field. Verticalgeometry devices are of interest due to their high blocking voltage and small form factor. One challenge for realizing complex vertical devices is the regrowth of low-leakage-current p-n junctions within selectively defined regions of the wafer. Presently, regrown p-n junctions exhibit higher leakage current than continuously grown p-n junctions, possibly due to impurity incorporation at the regrowth interfaces, which consist of c-plane and non-basal planes. Here, we study the interfacial impurity incorporation induced by various growth interruptions and regrowth conditions on m-plane p-n junctions on free-standing GaN substrates. The following interruption types were investigated: (1) sample in the main MOCVD chamber for 10 min, (2) sample in the MOCVD load lock for 10 min, (3) sample outside the MOCVD for 10 min, and (4) sample outside the MOCVD for one week. Regrowth after the interruptions was performed on two different samples under n-GaN and p-GaN growth conditions, respectively. Secondary ion mass spectrometry (SIMS) analysis indicated interfacial silicon spikes with concentrations ranging from 5e16 cm-3 to 2e18 cm-3 for the n-GaN growth conditions and 2e16 cm-3 to 5e18 cm-3 for the p-GaN growth conditions. Oxygen spikes with concentrations ~1e17 cm-3 were observed at the regrowth interfaces. Carbon impurity levels did not spike at the regrowth interfaces under either set of growth conditions. We have correlated the effects of these interfacial impurities with the reverse leakage current and breakdown voltage of regrown m-plane p-n junctions.
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