We present a postgrowth selective-area-intermixing approach for on-chip III-V based monolithically integrated laser-waveguide structures for photonic integrated circuits. Implanting selective areas with an energy of 300 KeV and dose of 5 ×1012 cm-2 induced crystal defects in the InAs quantum dot gain material, results in a shifted absorption edge and complete quenching of optical emission. We successfully recovered the optical quality of the gain material through optimized rapid thermal annealing at 635 OC and achieved enhanced intermixing in the implanted region thus causing a relative blueshift of 20 nm in the passive waveguides, mitigating absorption at the laser emission wavelength.
We demonstrate high-gain InAs QDs targeting C-band and L-band using a five QD-layer structure grown via MOCVD, with a photoluminescence broadening of ~55 meV. Lasers were fabricated with cavity lengths from 2000-µm down to 333-µm, with cleaved un-coated facets. Threshold current density increases monotonically with temperature over a range of 300 K to 380 K for all cavity lengths with a factor of 3.0 and 3.4 increase for the longest and shortest cavities, respectively. Measurements of lasing spectrum reveal that even the shortest cavity maintains a stable increase in wavelength up to 390 K with no observable transition to the excited state.
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