We propose a non chemically-amplified positive-tone photoresist based on photolysis of o-nitrobenzyl phenol ether
(NBP). The increase in the amount of the phenolic hydroxyl group just after the exposure to the i-line propagation light
is observed via IR spectroscopy. Using near-field lithography (NFL) combined with the NBP, we form half-pitch (hp) 32
nm line and space (L/S) patterns with lower line edge roughness (LER) than those of a chemically amplified resist
(CAR). The high-resolution feature of the NBP is attributed to the photoreaction system without the acid diffusion,
which is inherently involved in CARs, although the NBP requires six times as much exposure dose as the CAR does. A
Hp 32 nm L/S patterns with 10 nm depths are successfully transferred to the 100 nm thick bottom-layer resist through the
tri-layer resist process. Hp 22 nm L/S patterns with 10 nm depths are also fabricated on the top portion of a single-layer
of NBP.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.