23 April 2019 Enhanced luminescence property of InGaN/GaN nanorod array light emitting diode
Bingshe Xu, Dan Han, Peizhi Liu, Qingming Liu, Aiqin Zhang, Shufang Ma, Lin Shang
Author Affiliations +
Abstract
Three-dimensional (3-D) InGaN/GaN nanorod array light emitting diode (LED) (nanorod-LED) with fine periodicity has been successfully fabricated by the focused ion beam (FIB) etching technique. After FIB etching, the uniformity of nanorod array is 94.3%, manifesting that FIB can control the etch size and etch depth exactly. After KOH etching, nanorod array exhibits comparatively smooth sidewalls. Compared to planar LED, the microphotoluminescence integrated intensity of nanorod-LED is enhanced by 15.7%. Additionally, the finite difference time domain simulations demonstrate that more photons can be extracted by nanorod array and spread to the further region, which is mainly due to the reduction of transform from radiation pattern to modified guided modes.
© 2019 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2019/$25.00 © 2019 SPIE
Bingshe Xu, Dan Han, Peizhi Liu, Qingming Liu, Aiqin Zhang, Shufang Ma, and Lin Shang "Enhanced luminescence property of InGaN/GaN nanorod array light emitting diode," Optical Engineering 58(4), 045102 (23 April 2019). https://doi.org/10.1117/1.OE.58.4.045102
Received: 17 October 2018; Accepted: 4 April 2019; Published: 23 April 2019
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CITATIONS
Cited by 6 scholarly publications.
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KEYWORDS
Nanorods

Etching

Light emitting diodes

Fabrication

Luminescence

Nanolithography

Scanning electron microscopy

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