Bingshe Xu, Dan Han, Peizhi Liu, Qingming Liu, Aiqin Zhang, Shufang Ma, Lin Shang
Optical Engineering, Vol. 58, Issue 04, 045102, (April 2019) https://doi.org/10.1117/1.OE.58.4.045102
TOPICS: Nanorods, Light emitting diodes, Etching, Fabrication, Luminescence, Nanolithography, Scanning electron microscopy, Finite-difference time-domain method, LED displays, Photons
Three-dimensional (3-D) InGaN/GaN nanorod array light emitting diode (LED) (nanorod-LED) with fine periodicity has been successfully fabricated by the focused ion beam (FIB) etching technique. After FIB etching, the uniformity of nanorod array is 94.3%, manifesting that FIB can control the etch size and etch depth exactly. After KOH etching, nanorod array exhibits comparatively smooth sidewalls. Compared to planar LED, the microphotoluminescence integrated intensity of nanorod-LED is enhanced by 15.7%. Additionally, the finite difference time domain simulations demonstrate that more photons can be extracted by nanorod array and spread to the further region, which is mainly due to the reduction of transform from radiation pattern to modified guided modes.