THz sources using indium phosphide high electron mobility transistors

W. R. Deal

doi:10.1117/12.2024529

24 September 2013 THz sources using indium phosphide high electron mobility transistors

W. R. Deal

Proceedings Volume 8846, Terahertz Emitters, Receivers, and Applications IV; 88460D (2013) https://doi.org/10.1117/12.2024529
Event: SPIE Optical Engineering + Applications, 2013, San Diego, California, United States

Abstract

In the last few years, InP HEMT maximum frequency of oscillation (fMAX) has pushed well beyond 1 THz (1000 GHz). This implies that solid state amplification is possible to frequencies approaching 1 THz. In this paper, we provide an overview of power amplifier and power generation work which has been done using InP HEMT technology. In particular, power generation has been demonstrated to 0.67 THz

Citation Download Citation

W. R. Deal "THz sources using indium phosphide high electron mobility transistors", Proc. SPIE 8846, Terahertz Emitters, Receivers, and Applications IV, 88460D (24 September 2013); https://doi.org/10.1117/12.2024529

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