Ultra-high-frequency GaInAs/InP devices and circuits for millimeter wave application

Paul T. Greiling

doi:10.1117/12.24288

1 March 1991 Ultra-high-frequency GaInAs/InP devices and circuits for millimeter wave application

Paul T. Greiling

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24288
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

InP-based (AlInAs/GaInAs) high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have demonstrated a substantial performance improvement over GaAs-based devices. HEMTS with extrinsic over 200 GHz fmax''s over 300 GHz and extremely low noise figures with high associated gain ( 5 dB with 15 dB at 12 GHz and 5 dB with 8 dB at 60 GHz) have been achieved. HBTs have exhibited fT''s exceeding 90 GHz with fmax''s of 70 GHz. Digital and analog ICs have shown state-of-the-art performance a 25 0Hz divide by 4 a 9 GHz 8/9 dual modulus divider and a dc coupled feedback amplifier with 33 GHz bandwidth. The status of these device technologies for high performance microwave and millimeter-wave applications will be discussed.

Citation Download Citation

Paul T. Greiling "Ultra-high-frequency GaInAs/InP devices and circuits for millimeter wave application", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24288

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