Paper
8 November 2012 Photomask quality evaluation using lithography simulation and precision SEM image contour data
Tsutomu Murakawa, Naoki Fukuda, Soichi Shida, Toshimichi Iwai, Jun Matsumoto, Takayuki Nakamura, Kazuyuki Hagiwara, Shohei Matsushita, Daisuke Hara, Anthony Adamov
Author Affiliations +
Abstract
To evaluate photomask quality, the current method uses spatial imaging by optical inspection tools. This technique at 1Xnm node has a resolution limit because small defects will be difficult to extract. To simulate the mask error-enhancement factor (MEEF) influence for aggressive OPC in 1Xnm node, wide FOV contour data and tone information are derived from high precision SEM images. For this purpose we have developed a new contour data extraction algorithm with sub-nanometer accuracy resulting in a wide Field of View (FOV) SEM image: (for example, more than 10um x 10um square). We evaluated MEEF influence of high-end photomask pattern using the wide FOV contour data of "E3630 MVM-SEMTM" and lithography simulator "TrueMaskTM DS" of D2S, Inc. As a result, we can detect the "invisible defect" as the MEEF influence using the wide FOV contour data and lithography simulator.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsutomu Murakawa, Naoki Fukuda, Soichi Shida, Toshimichi Iwai, Jun Matsumoto, Takayuki Nakamura, Kazuyuki Hagiwara, Shohei Matsushita, Daisuke Hara, and Anthony Adamov "Photomask quality evaluation using lithography simulation and precision SEM image contour data", Proc. SPIE 8522, Photomask Technology 2012, 852226 (8 November 2012); https://doi.org/10.1117/12.964994
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KEYWORDS
Photomasks

Lithography

Scanning electron microscopy

Semiconducting wafers

Image quality

Sensors

Signal detection

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