Ultranarrow-bandwidth 4-kHz ArF excimer laser for 193-nm lithography

Takashi Saito; Takashi Matsunaga; Ken-ichi Mitsuhashi; Katsutomo Terashima; Takeshi Ohta; Akifumi Tada; Takanobu Ishihara; Masaya Yoshino; Hiroaki Tsushima; Tatsuo Enami; Hitoshi Tomaru; Tatsushi Igarashi

doi:10.1117/12.435658

14 September 2001 Ultranarrow-bandwidth 4-kHz ArF excimer laser for 193-nm lithography

Takashi Saito, Takashi Matsunaga, Ken-ichi Mitsuhashi, Katsutomo Terashima, Takeshi Ohta, Akifumi Tada, Takanobu Ishihara, Masaya Yoshino, Hiroaki Tsushima, Tatsuo Enami, Hitoshi Tomaru, Tatsushi Igarashi

Author Affiliations +

Proceedings Volume 4346, Optical Microlithography XIV; (2001) https://doi.org/10.1117/12.435658
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

We have developed a 4-kHz ArF excimer laser with ultra-narrow bandwidth, which is applicable to high-NA scanners for sub-0.13-micrometers microlithography. In this paper, we describe a 4-kHz ArF excimer laser for mass production: the model G40A, which has an output power of 20 W and energy dose stability of less than +/- 0.3% (20-ms window) at 4 kHz. This dose stability is comparable to the performance of an existing 2-kHz ArF excimer laser, the model G20A. The new laser also has the following specifications: a long pulse duration of over 40 ns, spectral bandwidth of less than 0.35 pm (FWHM), and spectral purity of less than 1.0 pm (95%). These characteristics are better than those of the G20A. A lifetime test of over 7 billion pulses has been conducted at 4-kHz operation. The new laser has maintained an energy dose stability of less than +/- 0.3% (20-ms windows) and demonstrated performance suitable for mass production even after over 7 billion pulses.

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Takashi Saito, Takashi Matsunaga, Ken-ichi Mitsuhashi, Katsutomo Terashima, Takeshi Ohta, Akifumi Tada, Takanobu Ishihara, Masaya Yoshino, Hiroaki Tsushima, Tatsuo Enami, Hitoshi Tomaru, and Tatsushi Igarashi "Ultranarrow-bandwidth 4-kHz ArF excimer laser for 193-nm lithography", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435658

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