Multiple patterning ArF immersion lithography has been expected as the promising technology to meet tighter leading edge device requirements. To enhance the resolution and productivity for multiple-patterning application, key light source performances are spectral bandwidth stability and wavelength stability. The increased spectral bandwidth stability contributes to more precise critical dimension (CD) control and improves device yield. The increased wavelength stability can realize accurate focus and improve overlay accuracy. Our new spectral bandwidth control module improves E95 spectral bandwidth stability. The spectral bandwidth has deviations by thermal history with light source operations. It should be always controlled tightly even after a quiescent interval, such as wafer loading. In our laser system, a spectral bandwidth is controlled by adjusting the wavefront of a laser beam using a two-lens optical system within a resonator. A high speed actuator equipped the movable lens enables E95 spectral bandwidth stability to be less variation. New designs of drive mechanism suppress the lens vibration and spectral bandwidth error. This technology enables 3-sigma of E95 spectral bandwidth field average to be under 5 fm. This large shrinkage for E95 spectral bandwidth stability is the key to improve larger focus budgets for a leading edge processes. A new designed line narrowing module (LNM) improves wavelength stability. The wavelength is controlled by changing the rotation of a beam expander prism using actuator. Wavelength stability is improved further by the anti-vibration structure of the actuated prism in the LNM. The new design prism holding mechanisms reduce the mass of actuator load. This increases the stiffness of the system and suppresses the vibration of the prism rotation. New LNM reduce wavelength stability about 20%. The improvement in wavelength stability contributes to accurate focus and overlay. In addition, the lifetime of LNM is extending to reduce the Cost of Operation (CoO) and the light source downtime. A new ArF excimer laser, GT66A, maximizes device yield, process productivity and minimizes the operational costs for chipmakers.
Multi-patterning techniques with ArF immersion lithography is expected to continue as main solution for manufacturing IC chips. The reduction of laser downtime has great impact on the productivity of chipmakers. The laser downtime is closely related to the lifetime of consumable parts of the laser. Gigaphoton has developed longer life excimer laser chamber which contains a new technology “New-type G-electrode”. This new type excimer laser chamber demonstrated 1.3 times longer lifetime than conventional excimer laser chamber. Gigaphoton has also introduced new design of LNM (Line Narrowing Module) last year. Through combines timing of maintenance of new type excimer laser chamber and new type LNM, it’s expected that the downtime of the laser is significantly reduced than ever. This leads to the improvement of the throughput on ArFi lithography.
Latest ArF immersion lithography has been positioned as the promising technology to meet tighter process control requirements with providing highly efficient productivity, simultaneously. The most important features for the next generation lightsources are the improvement of chip yield and tool availability in manufacturing. One of the key requirements for lightsource is E95% bandwidth, which has become more critical parameter for enhancing process margin and improving optical characteristic. Lower E95% bandwidth enables to increase imaging contrast which demonstrates better OPE characteristic with better resolution as well as improved E95% bandwidth stability that providing CD uniformity on wafer.
A newly designed line narrowing module (LNM) enables to lower E95% bandwidth from the standard 300fm to 200fm. The large shrinkage for E95% bandwidth is achieved by the sophisticated design in LNM which enables to lower thermal wave front aberration reducing heat effect at optical elements and mechanical components during lasing the lights. Lower E95% bandwidth reduces a focus blur in the formulated image that is generated from the chromatic aberration with projection lenses in ArF immersion lithography system.
In the other hand, it is essential to improve the productivity by means of reducing downtime, the lifetime of consumable modules such as a chamber and a line narrowing module (LNM) is needed to be extended. New electrodes as called “RAIKIRI” electrode with chamber enable lifetime extension from 60 billion pulses (Bpls) to 80 Bpls. Furthermore, new optical design in LNM enables the lifetime to extend from 60 Bpls to 110 Bpls. Hence, the GT65A, maximizes device yield, process productivity therefore provides optimum in the operational costs for chipmakers.
In the presentation, the latest development status and performances on GT65A will be discussed.
Multiple patterning ArF immersion lithography has been expected as the promising technology to meet tighter process control requirements. The most important features for the next generation light sources are improvement of chip yield, enhancement of productivity and reduction of operational costs for chipmakers [1][2]. One of key performance for light source is E95 bandwidth, which has become more important parameter for enhancing process margin and improving device productivity. A faster actuator to move a lens improves E95 bandwidth stability [3]. This technology enables 3σ of E95 bandwidth field average to be under 10 fm. This contributes to more precise CD control and improves device yield. Latest LNM enables E95 bandwidth to lower from the standard 300 fm to 200 fm [4]. The large shrinkage for E95 bandwidth is achieved by introducing the ingenious design in LNM. High purity E95 bandwidth improves imaging contrast and therefore increases exposure latitude. A new control algorithm enables E95 bandwidth to vary up to 450 fm, leveraging the movable lens. The combination of the new LNM, the movable lens and the new bandwidth control algorithm enables E95 bandwidth to control between 200 fm and 450 fm [5]. The tunable E95 bandwidth technology can improve process productivity for chip makers by compensating not only machine to machine difference of imaging contrast but also difference of imaging contrast between different generation scanners. The tunable E95 bandwidth technology has no influence on key laser performance indicator, dose stability, wavelength stability, E95 bandwidth stability, etc. On the other hand, to reduce downtime and operational costs for chipmakers, the lifetime of consumable modules such as a chamber and a line narrowing module (LNM) is needed to be extended. New electrodes with chamber enables chamber lifetime to extend from 60 billion pulses (Bpls) to 70 Bpls. Furthermore, new optical design in LNM enables the lifetime to extend from 60 Bpls to 110 Bpls. A new ArF excimer laser, GT65A, maximizes device yield, process productivity and minimizes the operational costs for chipmakers.
Multi-patterning techniques with ArF immersion lithography is expected to continue as main solution for manufacturing IC chips. The reduction of laser downtime has great impact on the productivity of chipmakers. The laser downtime is closely related to the lifetime of consumable parts of the laser. Gigaphoton developed new laser modules, chamber and LNM (Line Narrowing Module) which have longer lifetime than current one. New chamber demonstrated 1.2 times longer lifetime than current chamber. New LNM demonstrated 1.8 times longer lifetime than current LNM. These new modules will help to reduce the downtime of the laser.
The multiple patterning ArF immersion lithography has been expected as the promising technology to satisfy leading
edge device requirements. Gigaphoton carries out developments to improve device yields and to reduce costs of
operation in exposure. One of them is ultra-narrowing spectral bandwidth of light source without Helium gas usage. The
ingenious configuration of Line Narrowing Module (LNM) allows E95 bandwidth to reach 200 fm from 300 fm in
Helium free operation. Narrower bandwidth will improve exposure latitude. Helium free operation will reduce
operational costs and will be independent of Helium gas shortage. Second is improving stability of bandwidth. 5 fm E95
bandwidth shot average can be realized by adopting a new fast actuator and a new control method. Stable bandwidth will
improve CD uniformity. They are also able to broaden a bandwidth tuning range and to make a bandwidth tuning speed
faster. New type LNM and new bandwidth control that Gigaphoton has developed realize ultra-narrow bandwidth,
Helium free operation, stable bandwidth, broad bandwidth tuning range and fast bandwidth tuning speed. They will
contribute to the improvement of device yield in cutting edge exposure condition and the reduction of operational costs.
These functions can be upgradable for our ArF excimer laser.
Multiple patterning ArF immersion lithography has been expected as the promising technology to meet tighter leading
edge device requirements. The most needed features for the next generation lasers are improvement of device yield, the
prevention against rare resource shortage and the reduction of operational costs in multiple-patterning lithography [1]
[2]. To support these requirements, GT65A provides the functions of tighter E95 bandwidth stability, lower E95
bandwidth and tunable E95 bandwidth to enhance chip yields [3] [4]. Furthermore, in the prevention against rare
resource shortage and the reduction of operational costs, GT65A realizes helium-free operation in a line narrowing
module (LNM) and the reduction of neon consumption in a chamber [5]. A faster actuator equipped with the movable
lens enables shot average of E95 bandwidth stability to be within ±5 fm to more rapidly adjust laser beam wavefront.
More stable spectral bandwidth stability leads to improve CD uniformity. New designed LNM realizes 200 fm of lower
E95 bandwidth, because it suppresses thermal wavefront deformation in optical elements and mechanical components.
Lower E95 bandwidth improves image contrast and enhances exposure latitude. The combination of a faster actuator
and new LNM enables tunable E95 bandwidth to vary from 200 to 450 fm at less than time intervals of a wafer lot
exchange, six seconds. This enhances imaging margins by optimizing E95 bandwidth of light sources according to
individual scanners. New LNM additionally enables helium-free operation to lower E95 bandwidth in spite of nitrogen
purge with higher refractive index variation to temperature. The employment of a new LNM can avoid helium supply
risk and saves helium consumption of 80 kL/year/unit. Gas recycling system saves by about 92% of neon consumption
in ArF laser. Similarly, the recycling system saves about 85% of neon consumption in KrF laser too. These functions
with GT65A improve chip yield and process margins, and support sustainable high volume manufacturing (HVM).
ArF and KrF excimer lasers are widely used as a light source for the lithography process of semiconductor
manufacturing. The excimer lasers consume laser gas mixture in a discharge chamber as laser media, and more than
96% of the gas mixture is Neon. Recently Neon supply and demand balance became critical situation; the price has
risen two years ago due to the instability of politics and economy in Ukraine. Although Neon price decreased now, its
price is still higher than two years ago. Gigaphoton has released gas consumption reduction, called Total Gas
Management (TGM) series, as part of the green activities. Conventional gas consumption reduction (eTGM) achieved
50% gas consumption reductions from the former gas control (sTGM) by optimizing the laser gas control.
In order to reduce gas consumption further, Gigaphoton has been developing new gas recycle system hTGM.
hTGM purifies used gas so that laser can use it repeatedly. Field evaluation of KrF-hTGM system has been started.
The system was connected to five KrF laser systems and achieved 85% of the gas recycling ratio, keeping stable laser
performance. Also, internal evaluation of ArF-hTGM system has been started. The system was connected to one ArF
laser and achieved 92% of the gas recycling ratio, keeping stable laser performance.
Multiple patterning ArF immersion lithography has been expected as the promising technology to satisfy tighter leading edge device requirements. A new ArF excimer laser, GT64A has been developed to cope with the prevention against rare resource shortage and the reduction of operational costs. GT64A provides the sophisticated technologies which realize the narrow spectral bandwidth with helium free operation. A helium gas purge has usually been employed due to the low refractive index variation with temperature rises within a line narrowing module(LNM). Helium is a non-renewable resource and the world’s reserves have been running out. Nitrogen gas with an affordable price has been used as an alternative purge gas of helium on the restrictive condition of low thermal loads. However, the refractive index variation of nitrogen gas is approximately ten times more sensitive to temperature rises than that of helium, and broadens a spectral bandwidth in the high duty cycle operations. The new LNM design enables heat effect in laser shooting at optical elements and mechanical components in the vicinity of an optical path to be lower. This reduces thermal wavefront deformation of a laser beam without helium gas purge within LNM, and narrows a spectrum bandwidth without helium purge. Gigaphoton proved that the new LNM enabled E95 bandwidth without control to improve a lot with nitrogen purge.
Multiple patterning ArF immersion lithography has been expected as the promising technology to satisfy tighter leading edge device requirements. One of the most important features of the next generation lasers will be the ability to support green operations while further improving cost of ownership and performance. Especially, the dependence on rare gases, such as Neon and Helium, is becoming a critical issue for high volume manufacturing process.
The new ArF excimer laser, GT64A has been developed to cope with the reduction of operational costs, the prevention against rare resource shortage and the improvement of device yield in multiple-patterning lithography. GT64A has advantages in efficiency and stability based on the field-proven injection-lock twin-chamber platform (GigaTwin platform). By the combination of GigaTwin platform and the advanced gas control algorithm, the consumption of rare gases such as Neon is reduced to a half. And newly designed Line Narrowing Module can realize completely Helium free operation. For the device yield improvement, spectral bandwidth stability is important to increase image contrast and contribute to the further reduction of CD variation. The new spectral bandwidth control algorithm and high response actuator has been developed to compensate the offset due to thermal change during the interval such as the period of wafer exchange operation. And REDeeM Cloud™, new monitoring system for managing light source performance and operations, is on-board and provides detailed light source information such as wavelength, energy, E95, etc.
The new ArF Immersion Laser, GT64A has been developed to support the next generation multiple-patterning process. It offers the industry’s highest output power of 120W with high stability and efficiency. 120W output power with auto-adjusting function enables to meet the requirements of various processes and makes higher-throughput possible even at 450mm-wafers. The increased wavelength stability and bandwidth stability can further improve overlay accuracy and CD error required for the next generation multiple-patterning lithography. Advanced gas control algorithm reduces the consumption of rare gases such as neon to a half. Helium-free operation is also under development to cope with the unstable supply of helium gases worldwide.
New advanced wavelength control and bandwidth control algorithm has been developed to meet tighter stability requirement for the next generation multiple-patterning lithography.
The difficulty of EUV lithography system development has prolonged the industry’s dependence on ArF excimer lasers to realize further advancements in lithography process technologies. Smaller CD with reduced cost requires tighter specifications, and the potential extension to 450mm wafers introduces extremely difficult performance challenges on lasers. One of the most important features of the next generation lasers will be the ability to support green operations while further improving cost of ownership and performance. For example, electricity consumption costs and the dependence on rare gases, such as neon and helium, will become critical considerations for HVM process going forward. As a laser vendor, Gigaphoton continues to innovate and develop solutions that address these important issues. The latest model GT64A with its field-proven, twin-chamber platform has reduced environmental impact while upgrading performance and power. A variety of green technologies are employed on the GT64A. The first is the reduction of gas usage. Parameters, such as input power and gas pressure are closely monitored during operations and fed back to the injection/exhaust gas controller system. By applying a special algorithm, the laser gas consumption can be reduced by up to 50%. More than 96% of the gas used by the lasers is neon. Another rare gas that requires attention is Helium. Recently the unstable supply of helium became a serious worldwide issue. To cope with this situation, Gigaphoton is developing lasers that support completely helium-free operations.
193nm ArF excimer lasers are widely used as light sources for the lithography process of semiconductor production.
193nm ArF exicmer lasers are expected to continue to be the main solution in photolithography, since advanced
lithography technologies such as multiple patterning and Self-Aligned Double Patterning (SADP) are being developed.
In order to apply these technologies to high-volume semiconductor manufacturing, the key is to reduce the total
operating cost. To reduce the total operating cost, life extension of consumable part and reduction of power consumption
are an important factor. The chamber life time and power consumption are a main factor to decide the total operating
cost. Therefore, we have developed the new technology for extension of the chamber life time and low electricity
consumption. In this paper, we will report the new technology to extend the life time of the laser chamber and to reduce
the electricity consumption.
193nm ArF excimer lasers are widely used as light sources for the lithography process of semiconductor production. At first, ArF excimer lasers have been used in semiconductor productions at the 90nm node and recently ArF excimer lasers have begun to be used for the 32nm node, by the progress in the immersion technology and the double-patterning technology. Furthermore, considering current status of development of the lithography technology using a next-generation light source, or extreme ultraviolet (EUV) light source, the start of mass production with the next-generation light source is estimated to start from 2015. Therefore, there is a need for extension of 193nm immersion lithography technology. By using the multi-patterning and double-patterning technology, design rules below limit at single exposure is possible. However, throughput is reduced due to increased lithography processes. In order to improve a decrease in throughput, a high power ArF excimer laser and larger size wafer (450mm in diameter) is needed. We have developed a new high power laser with the concept of eco-friendly. In this paper, we will introduce technologies used for our latest ArF excimer laser having tunable output power between 90W and 120W and report its performance data.
193nm ArF eximer lasers are expected to continue to be the main solution in photolithography, since advanced
lithography tecnologies such as Multiple patterning and Self-aligned double patterning (SADP) are being developed. In
order to appliy these tecnologies to high-volume semiconductor manufactureing, the key is to contain chip
manufactureing costs. Therefore, improvement on Reliability, Availability and Maintainability of ArF excimer lasers is
important.[1] We works on improving productivity and reducing downtime of ArF exmer lasers, which leads to
Reliability, Availability and Maintainability improvemnet. First in this paper, our focus drilling tecnique, which
increases depth of focus (DoF) by spectral bandwidth tuning is introdueced. This focus drilling enables to increase DoF
for isolated contact holes. and it not degrades the wafer stage speed.[2] Second, a technique which eables to reduce gas
refill time to zero is introduced. This technique reduces downtime so Availavility is expected to improve. In this paper,
we report these tecniques by using simulation resutls and partially experimental resutls provided by a semiconductor
manufacturer.
ArF immersion technology has been used widely in volume production for 45nm node. For 32nm node and beyond,
double patterning technology with ArF immersion lithography is considered to be the main stream solution until EUV is
ready.
Our target is to reduce CoO(Cost of ownership) and we aim to develop for ecology and high durability laser. We will
introduce the latest performance data of the laser built for ArF immersion lithography under the EcoPhoton concept.
Eco-photon concept:
-CoC (Cost of Consumable)
-CoD (Cost of Downtime)
-CoE(Cost of Energy & Environment)
We have developed flexible and high power injection-lock ArF excimer laser for double patterning, GT62A-1SxE
(Max90W/6000Hz/Flexible power with 10-15mJ/0.30pm (E95)) based on the GigaTwin platform5). A number of
innovative and unique technologies are implemented on GT62A-1SxE. In addition, GT62A-1SxE is the laser matching
the enhancement technology of advanced illumination systems. For example, in order to provide illumination power
optimum for resist sensitivity, it has extendable power from 60W to 90W.
We have confirmed durability under these concept with the regulated operation condition with flexible power 60-90W.
We show the high durability data of GT62A-1SxE with Eco-Photon concept. In addition to the results the field reliability
and availability of our Giga Twin series (GT6XA). We also show technologies which made these performances and its
actual data. A number of innovative and unique technologies are implemented on GT62A.
ArF immersion technology is spotlighted as the enabling technology for the 45nm node and beyond. Recently, double
exposure technology is also considered as a possible candidate for the 32nm node and beyond. We have already released
an injection lock ArF excimer laser, the GT61A (60W/6kHz/10mJ/0.30pm) with ultra line-narrowed spectrum and
stabilized spectrum performance for immersion lithography tools with N.A.>1.3, and we have been monitoring the field
reliability data of our lasers used in the ArF immersion segment since Q4 2006.
In this report we show field reliability data of our GigaTwin series - twin chamber ArF laser products. GigaTwin series
have high reliability. The availability that exceeds 99.5% proves the reliability of the GigaTwin series.
We have developed tunable and high power injection-lock ArF excimer laser for double patterning, GT62A
(Max90W/6000Hz/Tunable power with 10-15mJ/0.30pm (E95)) based on the GigaTwin platform. A number of
innovative and unique technologies are implemented on GT62A.
- Support the latest illumination optical system
- Support E95 stability and adjustability
- Reduce total cost (Cost of Consumables, Cost of Downtime and Cost of Energy & Environment)
In advanced lithography processes, immersion lithography technology is beginning to be used in volume production at
the 45-nm technology node. Beyond that, double-patterning immersion lithography is considered to be one of the
promising technologies -meeting the requirements of the next-generation 32-nm technology node. Light source
requirements for double patterning lithography tool are high power and high uptime to enhance economic efficiency, as
well as extremely stable optical performances for high resolution capabilities.
In this paper, the GT62A, Argon Fluoride (ArF) excimer laser light source which meets these requirements is introduced.
The GT62A has an emission wavelength of 193-nm, a power output of 90 W and a repetition rate of 6,000 Hz. The dose
uniformity of the GT62A was improved for reduction of Critical Dimension (CD) variation and better Critical
Dimension Uniformity (CDU). A stable wavelength and a spectrum bandwidth of the GT62A satisfy the requirements of
the high resolution lithography tools which need the steady focus stability. In addition, we verified by simulation that the
spectrum bandwidth control in the GT62A contributes to Depth of Focus (DOF) enhancement. The new technology for
the light source and detailed optical performance data are presented.
ArF immersion technology is spotlighted as the enabling technology for the 45nm node and beyond. Recently, double
exposure technology is also considered as a possible candidate for the 32nm node and beyond. We have already released
an injection lock ArF excimer laser, the GT61A (60W/6kHz/10mJ/0.35pm) with ultra line-narrowed spectrum and
stabilized spectrum performance for immersion lithography tools with N.A.>1.3, and we have been monitoring the field
reliability data of our lasers used in the ArF immersion segment since Q4 2006. We show GT series reliability data in the
field. GT series have high reliability performance. The availability that exceeds 99.5% proves the reliability of the GT
series. We have developed high power injection lock ArF excimer laser for double patterning, the GT62A
(90W/6000Hz/15mJ/0.35pm(E95)) based on the GigaTwin (GT) platform. Number of innovative and unique
technologies are implemented on GT62A in order to reduce running cost of laser. We have introduced unique technology
to enable 40 billion pulse lifetime of laser chambers to drastically reduce running cost. In addition, we have improved
lifetime of Line Narrowing Module significantly by changing optical path. Furthermore, the extension of gas refill
intervals was achieved by introducing new gas supply module and sophisticated gas control algorithm. We achieved the
reduction of operation cost and down time by introducing these three technologies.
Last year Gigaphoton introduced a 45-W ArF excimer laser, model GT40A, to semiconductor markets as a light source for 65 nm lithography generation. The GT40A is based on injection lock technology with G-electrode, magnetic bearing and high resolution technologies for high reliability and long lifetime. As a result, GT40A showed the stable performance during the chamber maintenance interval of over 15 billion pulses. In this paper we will report the longterm stability of GT40A.
We have developed a 4-kHz ArF excimer laser with ultra-narrow bandwidth, which is applicable to high-NA scanners for sub-0.13-micrometers microlithography. In this paper, we describe a 4-kHz ArF excimer laser for mass production: the model G40A, which has an output power of 20 W and energy dose stability of less than +/- 0.3% (20-ms window) at 4 kHz. This dose stability is comparable to the performance of an existing 2-kHz ArF excimer laser, the model G20A. The new laser also has the following specifications: a long pulse duration of over 40 ns, spectral bandwidth of less than 0.35 pm (FWHM), and spectral purity of less than 1.0 pm (95%). These characteristics are better than those of the G20A. A lifetime test of over 7 billion pulses has been conducted at 4-kHz operation. The new laser has maintained an energy dose stability of less than +/- 0.3% (20-ms windows) and demonstrated performance suitable for mass production even after over 7 billion pulses.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.