Combinatorial methodology for optimizing oxide/semiconductor interface with atomic interfacial layers

Toyohiro Chikyow; Parhat Ahmet; Kiyomi Nakajima; Takashi Koida; Masahiro Takakura; Mamoru Yoshimoto; Hideomi Koinuma

doi:10.1117/12.424754

23 April 2001 Combinatorial methodology for optimizing oxide/semiconductor interface with atomic interfacial layers

Toyohiro Chikyow, Parhat Ahmet, Kiyomi Nakajima, Takashi Koida, Masahiro Takakura, Mamoru Yoshimoto, Hideomi Koinuma

Proceedings Volume 4281, Combinatorial and Composition Spread Techniques in Materials and Device Development II; (2001) https://doi.org/10.1117/12.424754
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

A combinatorial methodology was employed to investigate oxide materials/semiconductor interfaces for future devices. For this purpose, a temperature gradient pulsed laser deposition to find optimum growth condition and transmission electron microscopy for structure and composition analysis were used. Newly proposed the "micro sampling method" with focused ion beam was applied to fabricate the specimen from the interested region in a shorter term. In growing oxide materials on Si substrate, a proper termination was found to be inevitable for avoiding surface oxidation. Arsenic was used to obtain a durable surface of Si in oxygen atmosphere. CeO2 and SrTiO3 were tried to grow and the interfaces were characterized using these method.

Citation Download Citation

Toyohiro Chikyow, Parhat Ahmet, Kiyomi Nakajima, Takashi Koida, Masahiro Takakura, Mamoru Yoshimoto, and Hideomi Koinuma "Combinatorial methodology for optimizing oxide/semiconductor interface with atomic interfacial layers", Proc. SPIE 4281, Combinatorial and Composition Spread Techniques in Materials and Device Development II, (23 April 2001); https://doi.org/10.1117/12.424754

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