Mask manufacturing contribution on 248-nm and 193-nm lithography performances

Alexandra Barberet; Gilles L. Fanget; Jean-Charles Richoilley; Michel Tissier; Yves Quere

doi:10.1117/12.410677

22 January 2001 Mask manufacturing contribution on 248-nm and 193-nm lithography performances

Alexandra Barberet, Gilles L. Fanget, Jean-Charles Richoilley, Michel Tissier, Yves Quere

Proceedings Volume 4186, 20th Annual BACUS Symposium on Photomask Technology; (2001) https://doi.org/10.1117/12.410677
Event: Photomask Technology, 2000, Monterey, CA, United States

Abstract

In this study, we focus on mask manufacturing contribution on 248nm & 193nm lithography performances. The masks are manufactured at DPI using both E-beam/Laser writing technologies (e-beam/laser) and two etching processes (Wet/Dry). Masks are optimized for 150nm node at wafer scale, neither RET nor tuning are used, despite of this, we obtain excellent and unexpected results for inferior nodes which highlight the robustness of the manufacturing mask processes being used.

Citation Download Citation

Alexandra Barberet, Gilles L. Fanget, Jean-Charles Richoilley, Michel Tissier, and Yves Quere "Mask manufacturing contribution on 248-nm and 193-nm lithography performances", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410677

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