Masking materials for 157-nm lithography

Bruce W. Smith; Anatoly Bourov; Matthew Lassiter; Michael J. Cangemi

doi:10.1117/12.373337

30 December 1999 Masking materials for 157-nm lithography

Bruce W. Smith, Anatoly Bourov, Matthew Lassiter, Michael J. Cangemi

Proceedings Volume 3873, 19th Annual Symposium on Photomask Technology; (1999) https://doi.org/10.1117/12.373337
Event: Photomask Technology and Management, 1999, Monterey, CA, United States

Abstract

Constraints of the photomask are beginning to play dominate roles in the advancement of new microlithographic technology. Mask substrate materials are being explored by several groups. In this work, we explore the thin film masking layers themselves and identify potential solutions for binary and phase-shift masking films for use at 157 nm. The chromium based absorbing films used for binary masking are likely to meet the required needs. Modification of the composition will be required. Attenuated phase shift masking films become challenging as few transparent host thin film materials exist at the 157 nm wavelength.

Citation Download Citation

Bruce W. Smith, Anatoly Bourov, Matthew Lassiter, and Michael J. Cangemi "Masking materials for 157-nm lithography", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); https://doi.org/10.1117/12.373337

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